Patent US4786578A successfully refreshed from Google Patents.
US4786578A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Agent and method for the removal of photoresist and stripper residues from semiconductor substrates
Assignee: Merck Patent GmbH
•
Filing: 1987-07-20
•
Granted: 1988-11-22
•
Expires: 2007-07-20
Abstract
Abstract Photoresist and stripper residues can be rapidly and completely removed from semiconductor substrates after the stripping process with an aqueous post-rinsing agent which contains a nonionogenic surfactant and an organic base.
Inventors
- 👤 Karl H. Neisius
- 👤 Alois Litters
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 07:42
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; G03F7/422; G03F7/425
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
81 words
A method for removing photoresist and stripper residues from a substrate comprising treating with a post rinsing agent a substrate which has been subjected to photoresist stripping with a photoresist stripping agent and removed from said photoresist stripping agent, said post-rinsing agent comprising effective amounts of a nonionic surfactant and an organic base in aqueous solution, said organic base being water soluble to a degree whereby it will form a water-soluble salt with alkylbenzenesulfonic acids when the agent is contacted therewith.
Claim 2
Independent Claim
81 words
A method for removing photoresist and stripper residues from a substrate comprising treating with a post rinsing agent a substrate which has been subjected to photoresist stripping with a photoresist stripping agent and removed from said photoresist stripping agent, said post-rinsing agent comprising effective amounts of a nonionic surfactant and an organic base in aqueous solution, said organic base being water soluble to a degree whereby it will form a water-soluble salt with alkylbenzenesulfonic acids when the agent is contacted therewith.
Claim 3
Dependent Claim
32 words
A method of claim 1, for removing photoresist and stripper residues from a substrate, comprising treating the substrate with a post-rinsing agent consisting essentially of said nonionic surfactant, organic base and water.
Claim 4
Dependent Claim
13 words
A method of claim 2, wherein the photoresist residue is a positive photoresist.
Claim 5
Dependent Claim
11 words
A method of claim 3, wherein the substrate is a semiconductor.
Claim 6
Dependent Claim
31 words
A method of claim 1, for removing photoresist and stripper residues from a substrate, comprising treating the substrate with a post-rinsing agent wherein the organic base is ethanolamine, diethanolamine or triethanolamine.
Claim 7
Dependent Claim
13 words
A method of claim 5, wherein the photoresist residue is a positive photoresist.
Claim 8
Independent Claim
81 words
A method of completely removing photoresist structures and residues from a substrate which has been subjected to photoresist imaging, comprising treating the substrate with a photoresist stripper, removing the substrate from the stripper, and treating the substrate with a post-rinsing agent comprising effective amounts of a nonionic surfactant and an organic base in aqueous solution, said organic base being water soluble to a degree whereby it will form a water soluble salt with alkylbenzenesulfonic acids when the agent is contacted therewith.
Claim 9
Independent Claim
81 words
A method of completely removing photoresist structures and residues from a substrate which has been subjected to photoresist imaging, comprising treating the substrate with a photoresist stripper, removing the substrate from the stripper, and treating the substrate with a post-rinsing agent comprising effective amounts of a nonionic surfactant and an organic base in aqueous solution, said organic base being water soluble to a degree whereby it will form a water soluble salt with alkylbenzenesulfonic acids when the agent is contacted therewith.
Claim 10
Dependent Claim
84 words
A combination of (a) a substrate which has been subjected to photoresist stripping with a photoresist stripping agent and removed from said photoresist stripping agent and has resultant photoresist or stripper residue thereon, and (b) an aqueous post rinsing agent in contact with said substrate, comprising effective amounts of a nonionic surfactant and an organic base in aqueous solution, said organic base being water soluble to a degree whereby it will form a water-soluble salt with alkylbenzenesulfonic acids when the agent is contacted therewith.
Claim 11
Dependent Claim
84 words
A combination of (a) a substrate which has been subjected to photoresist stripping with a photoresist stripping agent and removed from said photoresist stripping agent and has resultant photoresist or stripper residue thereon, and (b) an aqueous post rinsing agent in contact with said substrate, comprising effective amounts of a nonionic surfactant and an organic base in aqueous solution, said organic base being water soluble to a degree whereby it will form a water-soluble salt with alkylbenzenesulfonic acids when the agent is contacted therewith.
Claim 12
Dependent Claim
19 words
A combination of claim 8 wherein said post-rinsing agent consists essentially of said nonionic surfactant, organic base and water.
Claim 13
Dependent Claim
26 words
A combination of claim 8, wherein the surfactant is an ethoxylated alkylphenol, a fatty acid ethoxylate, a fatty alcohol ethoxylate or an ethylene oxide/propylene oxide condensate.
Claim 14
Dependent Claim
14 words
A combination of claim 8, wherein the organic base is ethanolamine, diethanolamine or triethanolamine.
Claim 15
Dependent Claim
14 words
A combination of claim 10, wherein the organic base is ethanolamine, diethanolamine or triethanolamine.
Claim 16
Dependent Claim
29 words
A combination of claim 8, wherein the amount of surfactant is 0.1-10% by weight, and the amount of organic base is 1-10% by weight, referred to the total quantity.
Claim 17
Dependent Claim
29 words
A combination of claim 12, wherein the amount of surfactant is 0.1-10% by weight, and the amount of organic base is 1-10% by weight, referred to the total quantity.
Claim 18
Dependent Claim
30 words
A combination of claim 8, wherein the amount of surfactant is 1-5% by weight, and the amount of organic base is about 5% by weight, referred to the total quantity.
Claim 19
Dependent Claim
30 words
A combination of claim 12, wherein the amount of surfactant is 1-5% by weight, and the amount of organic base is about 5% by weight, referred to the total quantity.
Claim 20
Dependent Claim
12 words
A combination of claim 8, wherein the photoresist is a positive photoresist.
Claim 21
Dependent Claim
11 words
A combination of claim 17, wherein the substrate is a semiconductor.
References Cited (Backward Citations)
US2914482A
Cited
US3663445A
Cited
US3870647A
Cited
US3983078A
Cited
US4202800A
Cited
GB1573208A
Cited
US4202703A
Cited
GB2068405A
Cited
EP0120528A1
Cited
US4592787A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-22 | 1992-05-23 | 1992-11-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-22 | 1996-05-23 | 1996-11-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-22 | 2000-05-23 | 2000-11-22 | $7700.00 | Window Closed / Lapsed |