US4783426A
Expired / Lapsed
US
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Method of making a Group II-VI compound semiconductor device by solution growth
Assignee: Zaidan Hojin Handotai Kenkyu Shinkokai
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Filing: 1987-11-19
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Granted: 1988-11-08
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Expires: 2007-11-19
Abstract
Abstract A semiconductor device made of a II-VI compound semiconductor and having a p type semiconductor crystal. The p type semiconductor crystal is one obtained by growing the II-VI compound semiconductor crystal by relying on a liquid phase crystal growth process using a solvent comprised of one of Group II and Group VI elements constituting the Group II-VI compound semiconductor and having a higher vapor pressure over the other of these elements in an atmosphere comprised of the other of the elements having a lower vapor pressure under controlled vapor pressure of the atmosphere, and by doping into the solvent a p type impurity element selected from Group Ia and Ib elements in an amount of a range from 1x10-3 to 5x10-1 mol %. Thus, p type semiconductor crystals for use in semiconductor devices can be obtained easily from II-VI compound semiconductors. The present invention is especially effective in ZnSe crystals.
Inventors
- 👤 Jun-ichi Nishizawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 11:11
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; C; C30; C30B; C30B19/00; C30B19/02; C30B19/04; C30B29/00; C30B29/10; C30B29/46; C30B29/48; H10H20/01; H10H20/011; H10H20/012; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2913; H10P14/2916; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3431; H10P14/3438; H10P14/3441; H10P14/3444; H10P14/3446
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
135 words
A method of making a semiconductor device made of a Group II-VI compound semiconductor comprised of one of Zn and Cd selected from Group II elements and one of S and Se selected from Group VI elements, and containing therein at least one p-n junction formed of a single crystal, by employing a solution growth process using a solvent comprised of one of said Group II or Group VI elements having a higher vapor pressure in said Group II-VI compound semiconductor and by controlling the vapor pressure of the other element having a lower vapor pressure and by doping, in said solvent, a p type impurity selected from Group Ia and Ib element in an amount ranging from 1×10 -3 to 5×10 -1 mol% to obtain a p type semiconductor crystal in said single crystal.
Claim 2
Independent Claim
135 words
A method of making a semiconductor device made of a Group II-VI compound semiconductor comprised of one of Zn and Cd selected from Group II elements and one of S and Se selected from Group VI elements, and containing therein at least one p-n junction formed of a single crystal, by employing a solution growth process using a solvent comprised of one of said Group II or Group VI elements having a higher vapor pressure in said Group II-VI compound semiconductor and by controlling the vapor pressure of the other element having a lower vapor pressure and by doping, in said solvent, a p type impurity selected from Group Ia and Ib element in an amount ranging from 1×10 -3 to 5×10 -1 mol% to obtain a p type semiconductor crystal in said single crystal.
Claim 3
Independent Claim
145 words
A method of making a Group II-VI semiconductor device comprised of a first element selected from the group of Zn and Cd and a second element selected from the group of S and Se, said semiconductor device having a single crystal p-n junction being made by a solution growth process comprising the steps of: providing a solvent of one of said first and second elements having a higher vapor pressure in said Group II-VI semiconductor compound, providing a vapor of the other of said first and second elements having a lower vapor pressure in said Group II-VI semiconductor compound, controlling the pressure of said vapor, and doping said solvent with a p type impurity in an amount between 1×10 -3 to 5×10 -1 mol%, said impurity being selected from the Group Ia and Ib elements, whereby to obtain a p type single crystal semiconductor device.
Claim 4
Independent Claim
145 words
A method of making a Group II-VI semiconductor device comprised of a first element selected from the group of Zn and Cd and a second element selected from the group of S and Se, said semiconductor device having a single crystal p-n junction being made by a solution growth process comprising the steps of: providing a solvent of one of said first and second elements having a higher vapor pressure in said Group II-VI semiconductor compound, providing a vapor of the other of said first and second elements having a lower vapor pressure in said Group II-VI semiconductor compound, controlling the pressure of said vapor, and doping said solvent with a p type impurity in an amount between 1×10 -3 to 5×10 -1 mol%, said impurity being selected from the Group Ia and Ib elements, whereby to obtain a p type single crystal semiconductor device.
Claim 5
Dependent Claim
27 words
A method as recited in claim 2 wherein said Group Ia elements comprise Li, Na and K, and said Group Ib elements comprise Au, Ag and Cu.
Claim 6
Dependent Claim
19 words
A method as recited in claim 2 wherein said doping amount ranges between 5×10 -3 to 2×10 -2 mol%.
Claim 7
Dependent Claim
21 words
A method as recited in claim 2 wherein said solution growth process is conducted by relying on a temperature difference technique.
Claim 8
Dependent Claim
20 words
A method as recited in claim 2 further comprising carrying out said solution growth process in a closed quartz tube.
Claim 9
Dependent Claim
45 words
A method as recited in claim 6 wherein said closed quartz tube includes separate chamberscomprising a first chamber for crystal growth through recrystallization, a second chamber for containing a source crystal, and a third chamber in which the vapor pressure of an element is controlled.
Claim 10
Dependent Claim
29 words
A method as recited in claim 6 further comprising providing a pressurized gaseous atmosphere in said closed quartz tube selected from the group consisting of air, argon, and nitrogen.
Claim 11
Dependent Claim
24 words
A method as recited in claim 2 wherein said Group II-VI semiconductor compound comprises one of the groups f ZnSe, ZnS, CdS and CdSe.
Claim 12
Dependent Claim
27 words
A method as recited in claim 2 further comprising the step of controlling said pressure of said vapor between a range of 0.1 and 10.0 atmospheric pressures.
Claim 13
Dependent Claim
18 words
A method as recited in claim 2 wherein said semiconductor device fabricated thereby comprises a light emitting diode.
Claim 14
Dependent Claim
16 words
A method as recited in claim 11 wherein said light emitting diode comprises a ZnSe crystal.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-08 | 1992-05-09 | 1992-11-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-08 | 1996-05-09 | 1996-11-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-08 | 2000-05-09 | 2000-11-08 | $7700.00 | Window Closed / Lapsed |