US4725563A
Expired / Lapsed
US
⏱️ 0.0 years remaining
ZnSe green light emitting diode
Assignee: ZAIDAN HOJIM HANDOTAI KENKYU SHINKOKAI
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Filing: 1987-03-26
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Granted: 1988-02-16
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Expires: 2007-03-26
Abstract
Abstract A green color light emitting ZnSe diode having a pn junction is fabricated by the use of a ZnSe crystal having a good crystal perfection and being obtained by a solution growth method relying on the temperature difference technique using a solvent containing at least Te and Se and using atoms of at least one kind of impurity selected from Group Ib elements of the Periodic Table as a principal impurity for producing a p type region in the crystal.
Inventors
- 👤 Jun-ichi Nishizawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 01:10
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; H10H20/01; H10H20/011; H10H20/012; H10H20/8232; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/915; Y10S438/917; Y10S438/925; Y10S438/971
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
286 words
A method for producing a ZnSe compound semiconductor light emitting diode emitting light in the green color region and having a p-on-n or n-on-p type pn junction, said method comprising the steps of: (1) charging into a closed chamber a Te and Se-containing solvent for crystal growth in which the atomic fraction of Se to Te in the Se/(Se+Te) solvent is controlled, a ZnSe source crystal and an impurity to provide a first conductivity type establishing a temperature difference in the closed chamber to define a first region in which a ZnSe crystal plus impurity is recrystallized and a second region in which the source crystal is present, establishing a temperature difference between the first and second regions and maintaining both the temperature difference and the growth temperature for the ZnSe mixed crystal constant throughout the crystal growing process to produce a mixed crystal having the composition ZnSe 1-x Te x in which x has a value defined by area 11 in FIG. 2, the mixed crystal so grown being doped with the impurity; (2) removing the mixed crystal produced in step (1) and placing it in a closed chamber containing a Te and Se-containing solvent for crystal growth, in which the atomic fraction of the Se to Te in the Se/(Se+Te) solvent is controlled, and introducing an impurity to provide a second conductivity type different from the first conductivity type of step (1), establishing a temperature difference in the closed chamber to define a first region in which the crystal plus impurity is recrystallized and a second region in which the source crystal is present, and maintaining both the temperature difference and the growth temperature for the mixed crystal constant throughout the crystal growing process.
Claim 2
Independent Claim
286 words
A method for producing a ZnSe compound semiconductor light emitting diode emitting light in the green color region and having a p-on-n or n-on-p type pn junction, said method comprising the steps of: (1) charging into a closed chamber a Te and Se-containing solvent for crystal growth in which the atomic fraction of Se to Te in the Se/(Se+Te) solvent is controlled, a ZnSe source crystal and an impurity to provide a first conductivity type establishing a temperature difference in the closed chamber to define a first region in which a ZnSe crystal plus impurity is recrystallized and a second region in which the source crystal is present, establishing a temperature difference between the first and second regions and maintaining both the temperature difference and the growth temperature for the ZnSe mixed crystal constant throughout the crystal growing process to produce a mixed crystal having the composition ZnSe 1-x Te x in which x has a value defined by area 11 in FIG. 2, the mixed crystal so grown being doped with the impurity; (2) removing the mixed crystal produced in step (1) and placing it in a closed chamber containing a Te and Se-containing solvent for crystal growth, in which the atomic fraction of the Se to Te in the Se/(Se+Te) solvent is controlled, and introducing an impurity to provide a second conductivity type different from the first conductivity type of step (1), establishing a temperature difference in the closed chamber to define a first region in which the crystal plus impurity is recrystallized and a second region in which the source crystal is present, and maintaining both the temperature difference and the growth temperature for the mixed crystal constant throughout the crystal growing process.
Claim 3
Dependent Claim
45 words
The method of claim 1 in which an n-type crystal is grown in step (1) or step (2) and the atomic fraction of Se in the Se/(Se+Te) solvent and the value of x in the mixed crystal are defined by area 11 in FIG. 2.
Claim 4
Dependent Claim
45 words
The method of claim 1 in which a p-type crystal is grown in step (1) or step (2) and the atomic fraction of Se in the Se/(Se+Te) solvent and the value of x in the mixed crystal are defined by area 12 in FIG. 2.
References Cited (Backward Citations)
US4465527A
Cited
JPS575325A
Cited
US4619718A
Cited
JPS577171A
Cited
US4389256A
Cited
US4526632A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-02-15 | 1991-08-17 | 1992-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-02-15 | 1995-08-17 | 1996-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-02-15 | 1999-08-17 | 2000-02-16 | $7700.00 | Window Closed / Lapsed |