Patent US4782377A successfully refreshed from Google Patents.
US4782377A
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Semiconducting metal silicide radiation detectors and source
Assignee: COLORADO RESEARCH AND DEVELOPMENT Corp (CRDC)
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Filing: 1986-09-30
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Granted: 1988-11-01
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Expires: 2006-09-30
Abstract
Abstract Semiconducting metal silicide electromagnetic radiation sources and detectors have a thin film of semiconducting metal silicide grown or deposited on a silicon wafer. The metals are chosen from a group consisting of iron, iridium, manganese, chromium, rhenium, barium, calcium, magnesium and osmium. The detectors are intrinsic semiconductors and can be formed either as discrete devices, or monolithically on a silicon chip to provide an integrated detector or detector array. The semiconducting metal silicide devices are efficient detectors at wavelengths which mate with the transmission capabilities of certain optical fibers enhancing the combination of infra-red detectors and optical fiber transmission preveously known. Iron disilicide is useful as an infra-red radiation source and as an extrinsic detector as well.
Inventors
- 👤 John E. Mahan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 01:40
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; G; G02; G02B; G02B6/00; G02B6/24; G02B6/42; G02B6/4201; G02B6/4246; G02B6/4249; G02B6/4295; H10F; H10F30/00; H10F30/10; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/222; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F39/184; H10F77/00; H10F77/10; H10F77/12; H10H20/811
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
39 words
An integrated circuit comprising: a silicon substrate means; monolithic circuit means deposited on said silicon substrate means and having a portion formed of a semiconductive metal silicide means and a portion formed of any other silicon compatible semiconducting means.
Claim 2
Dependent Claim
39 words
An integrated circuit comprising: a silicon substrate means; monolithic circuit means deposited on said silicon substrate means and having a portion formed of a semiconductive metal silicide means and a portion formed of any other silicon compatible semiconducting means.
Claim 3
Dependent Claim
26 words
The integrated circuit of claim 1 wherein: said metal is selected from the group consisting of: iron, iridium, manganese, chromium, rhenium, calcium, barium, magnesium or osmium.
Claim 4
Dependent Claim
25 words
The integrated circuit of claim 1 wherein: said monolithic circuit means includes at least one processor means electrically connected to said semiconductive metal silicide means.
Claim 5
Dependent Claim
41 words
The integrated circuit of claim 1 including further: a conductive means formed in a pattern on said semiconductive metal silicide means to form an array of detector members and to interconnect said array of detector members to said monolithic circuit means.
Claim 6
Dependent Claim
31 words
The integrated circuit of claim 4 including further: a plurality of fiber optic radiation carriers mated to said array of detector members to provide data to said array of detector members.
Claim 7
Dependent Claim
72 words
The integrated circuit of claim 1 including further: a conductive means formed in a pattern on said semiconductive metal silicide means to interconnect a plurality of source members to form an array of source members and to interconnect said array of source members to said monolithic circuit means; a plurality of fiber optic radiation carriers mated to said array of source members to carry data away from said array of source members.
Claim 8
Dependent Claim
81 words
A radiation detector comprising: a p- or n-type substrate means; a first thin film of semiconductive metal silicide deposited on said substrate means and doped with a type of dopant opposite to that of said substrate means; a second thin film of semiconductive metal silicide deposited on said first thin film and doped with a type of dopant the same as that of said substrate means; first and second electrically conducting means formed on said first and second thin films respectively.
Claim 9
Dependent Claim
81 words
A radiation detector comprising: a p- or n-type substrate means; a first thin film of semiconductive metal silicide deposited on said substrate means and doped with a type of dopant opposite to that of said substrate means; a second thin film of semiconductive metal silicide deposited on said first thin film and doped with a type of dopant the same as that of said substrate means; first and second electrically conducting means formed on said first and second thin films respectively.
Claim 10
Dependent Claim
26 words
The radiation detector of claim 7 wherein: the metal is chosen from the group consisting of: iron, iridium, manganese, chromium, rhenium, calcium, barium, magnesium or osmium.
Claim 11
Dependent Claim
63 words
The radiation detector of claim 7 wherein: the metal silicide is chosen from the group consisting of: iron disilicide (FeSi 2 ), iridium silicide (IrSi 1 .75), manganese silicide (MnSi 1 .7), chromium disilicide (CrSi 2 ), rhenium disilicide (ReSi 2 ), magnesium silicide (Mg 2 Si), barium disilicide (BaSi 2 ), calcium silicide (Ca 2 Si) and osmium disilicide (OsSi 2 ).
Claim 12
Dependent Claim
39 words
An infra-red radiation detector comprising in combination: a thin film of semiconductive metal silicide; a silicon substrate means; first and second conductive means formed on said thin film of semiconductive metal silicide and on said silicon substrate means respectively.
Claim 13
Dependent Claim
39 words
An infra-red radiation detector comprising in combination: a thin film of semiconductive metal silicide; a silicon substrate means; first and second conductive means formed on said thin film of semiconductive metal silicide and on said silicon substrate means respectively.
Claim 14
Dependent Claim
62 words
The device of claim 10 wherein said metal silicide is chosen from the group consisting of: iron disilicide (FeSi 2 ), iridium silicide (IrSi 1 .75), manganese silicide (MnSi 1 .7), chromium disilicide (CrSi 2 ), rhenium disilicide (ReSi 2 ), magnesium silicide (Mg 2 Si), barium disilicide (BaSi 2 ), calcium silicide (Ca 2 Si) and osmium disilicide (OsSi 2 ).
Claim 15
Dependent Claim
99 words
An integrated circuit comprising in combination: a substrate means; first and second circuit means formed on said substrate means in which the second circuit means receives data from the first circuit means; first and second semiconductive metal silicide means formed on said substrate means; the first and second semiconductive metal silicide means interconnected electrically to said first and second circuit means respectively; the first semiconductive metal silicide means having radiation emitting properties; the second semiconductive metal silicide means having radiation detecting properties; waveguide means formed on said substrate means for interconnecting said first and second semiconductive metal silicide means.
Claim 16
Dependent Claim
99 words
An integrated circuit comprising in combination: a substrate means; first and second circuit means formed on said substrate means in which the second circuit means receives data from the first circuit means; first and second semiconductive metal silicide means formed on said substrate means; the first and second semiconductive metal silicide means interconnected electrically to said first and second circuit means respectively; the first semiconductive metal silicide means having radiation emitting properties; the second semiconductive metal silicide means having radiation detecting properties; waveguide means formed on said substrate means for interconnecting said first and second semiconductive metal silicide means.
Claim 17
Dependent Claim
92 words
An integrated circuit comprising in combination: first and second substrate means; first and second circuit means formed on said first and second substrate means respectively in which said second circuit means receives data from said first circuit means; first and second semiconductive metal silicide means formed on said first and second substrate means respectively: the first and second semiconductive metal silicide means interconnected electrically to said first and second circuit means respectively; the first semiconductive metal silicide means having radiation emitting properties; the second semiconductive metal silicide means having radiation detecting properties.
Claim 18
Dependent Claim
92 words
An integrated circuit comprising in combination: first and second substrate means; first and second circuit means formed on said first and second substrate means respectively in which said second circuit means receives data from said first circuit means; first and second semiconductive metal silicide means formed on said first and second substrate means respectively: the first and second semiconductive metal silicide means interconnected electrically to said first and second circuit means respectively; the first semiconductive metal silicide means having radiation emitting properties; the second semiconductive metal silicide means having radiation detecting properties.
Claim 19
Dependent Claim
103 words
An integrated circuit comprising in combination: first and second substrate means; first and second circuit means formed on said first and second substrate means respectively in which the second circuit means receives data from said first circuit means; first and second semiconductive metal silicide means formed on first and second substrate means respectively: the first and second semiconductive metal silicide means interconnected electrically to the first and second circuit means respectively; the first semiconductive metal silicide means having radiation emitting properties; the second semiconductive metal silicide means having radiation detecting properties; waveguide means for interconnecting said first and second semiconductive metal silicide means.
Claim 20
Dependent Claim
103 words
An integrated circuit comprising in combination: first and second substrate means; first and second circuit means formed on said first and second substrate means respectively in which the second circuit means receives data from said first circuit means; first and second semiconductive metal silicide means formed on first and second substrate means respectively: the first and second semiconductive metal silicide means interconnected electrically to the first and second circuit means respectively; the first semiconductive metal silicide means having radiation emitting properties; the second semiconductive metal silicide means having radiation detecting properties; waveguide means for interconnecting said first and second semiconductive metal silicide means.
Claim 21
Independent Claim
22 words
A device comprising the composite structure of: substrate means; a layer of semiconductive metal silicide deposited or grown on said substrate means.
Claim 22
Independent Claim
22 words
A device comprising the composite structure of: substrate means; a layer of semiconductive metal silicide deposited or grown on said substrate means.
Claim 23
Dependent Claim
25 words
The device of claim 15 wherein said metal is selected from the group consisting of: iron, iridium, manganese, chromium, rhenium, calcium, barium, magnesium, or osmium.
Claim 24
Dependent Claim
22 words
The device of claim 15 wherein said substrate means is selected from the group consisting of: silicon, glass, quartz, sapphire or ceramic.
Claim 25
Dependent Claim
54 words
A photoconductive detector device for detecting electromagnetic radiation comprising the device of claim 16 in combination with: first and second electrically conductive means formed on said layer of semiconductive metal silicide for making ohmic contact with said layer of semiconductive metal silicide; means for directing electromagnetic radiation on said layer of semiconductive metal silicide.
Claim 26
Dependent Claim
47 words
The device of claim 18 wherein said layer of semiconductive metal silicide is responsive to infra-red light applied to it by said directing means for exhibiting a reduction in the resistance of said layer of semiconductive metal silicide between said first and said second electrically conductive means.
Claim 27
Dependent Claim
17 words
The device of claim 15 wherein said metal is selected from the group consisting of: iron, manganese.
Claim 28
Dependent Claim
77 words
A device for generating infra-red electromagnetic radiation comprising the device of claim 20 in combination with: first electrically conductive means deposited on a surface of said substrate for making ohmic contact with said substrate; second electrically conductive means deposited on a surface of said layer of semiconductive metal silicide for making ohmic contact with said layer of semiconductive metal silicide; means for applying a source of electrical potential across said first and said second electrically conductive means.
Claim 29
Independent Claim
24 words
A device comprising the composite structure: a substrate means; a thin film of semiconductive metal silicide deposited on a surface of said substrate means.
Claim 30
Independent Claim
24 words
A device comprising the composite structure: a substrate means; a thin film of semiconductive metal silicide deposited on a surface of said substrate means.
Claim 31
Dependent Claim
25 words
The device of claim 22 wherein the metal is selected from the group consisting of: iron, iridium, manganese, chromium, rhenium, calcium, barium, magnesium or osmium.
Claim 32
Dependent Claim
55 words
A device for detecting electromagnetic radiation comprising the device of claim 23 in combination with: first and second electrically conductive means deposited on said thin film of semiconductive metal silicide for making ohmic contact with said thin film of semiconductive metal silicide; means for directing light radiation on said thin film of semiconductive metal silicide.
Claim 33
Dependent Claim
20 words
The device of claim 22 wherein said thin film of semiconducting metal silicide comprises a thin film of rhenium disilicide.
Claim 34
Dependent Claim
21 words
The device of claim 25 wherein the thickness of said thin film of rhenium disilicide was approximately 307 to 768 Angstroms.
Claim 35
Dependent Claim
18 words
The device of claim 22 wherein the metal is selected from the group consisting of: iron or manganese.
Claim 36
Dependent Claim
72 words
A device for generating infra-red radiation comprising the device of claim 27 in combination with: first electrically conductive contact deposited on said substrate means for making ohmic contact with said substrate means; second electrically conductive contacts deposited on said thin film of semiconductive metal silicide for making ohmic contact with said thin film of semiconductive metal silicide; means for applying an electrical potential to said first and said second electrically conductive contacts.
Claim 37
Dependent Claim
42 words
The device of claim 22 further comprising: integrated circuit means formed on said surface of said substrate means; two or more electrically conductive means ohmically connected to and electrically interconnecting said integrated circuit means and said thin film of semiconductive metal silicide.
Claim 38
Dependent Claim
62 words
The device of claim 15 wherein said semiconductive metal silicide is chosen from the group comprising: iron disilicide (FeSi 2 ), iridium silicide (IrSi 1 .75), manganese silicide (MnSi 1 .7), chromium disilicide (CrSi 2 ), rhenium disilicide (ReSi 2 ), magnesium silicide (Mg 2 Si), barium disilicide (BaSi 2 ), calcium silicide (Ca 2 Si) and osmium disilicide (OsSi 2 ).
Claim 39
Dependent Claim
76 words
A photoconductive detector device for detecting electromagnetic radiation comprising the device of claim 16 in combination with: first electrically conductive means formed on said layer of semiconductive metal silicide for making ohmic contact with said layer of semiconductive metal silicide; said electrically conductive means formed on said layer of semiconductive metal silicide for making a rectifying contact with said layer of semiconductive metal silicide; means for directing electromagnetic radiation on said layer of semiconductive metal silicide.
Claim 40
Dependent Claim
82 words
A radiation source comprising: a p- or n-type substrate means; a first layer of semiconductive metal silicide deposited or grown on said substrate means and doped with a type of dopant opposite to that of said substrate means; a second layer of semiconductive metal silicide deposited or grown on and partly overlaying said first layer and doped with a dopant the same as that of said substrate means; first and second electrically conducting means formed on said first and second layers respectively.
Claim 41
Dependent Claim
82 words
A radiation source comprising: a p- or n-type substrate means; a first layer of semiconductive metal silicide deposited or grown on said substrate means and doped with a type of dopant opposite to that of said substrate means; a second layer of semiconductive metal silicide deposited or grown on and partly overlaying said first layer and doped with a dopant the same as that of said substrate means; first and second electrically conducting means formed on said first and second layers respectively.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-01 | 1992-05-02 | 1992-11-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-01 | 1996-05-02 | 1996-11-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-01 | 2000-05-02 | 2000-11-01 | $7700.00 | Window Closed / Lapsed |