Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
212 words
A method of producing a flat light emitting diode (LED) display, comprising the steps of: (a) providing an insulative substrate on at least one surface of which a conductive layer is formed; (b) forming a p-n junction LED wafer having one p-type crystal surface and one n-type crystal surface; (c) applying a plurality of electrodes to said p-type crystal surface at a predetermined pitch and in rows and columns to define a predetermined two-dimensional pattern; (d) bonding the conductive layer on the insulative substrate and the n-type crystal surface of the LED wafer; (e) forming a plurality of first slits each extending along one of the rows and columns of the two-dimensional pattern, each of the first slits having a depth which extends from said p-type crystal surface of the LED wafer to the depth of the insulative substrate; and (f) forming a plurality of second slits each extending along the other of the rows and columns of the two-dimensional pattern, each of the second slits having a depth which extends from said p-type crystal surface of the LED wafer to a depth greater than the p-n junction but short of the insulative substrate, whereby said n-type crystal surface continuously contacts said conductive layer along said one of said columns and rows.
Claim 2
Independent Claim
212 words
A method of producing a flat light emitting diode (LED) display, comprising the steps of: (a) providing an insulative substrate on at least one surface of which a conductive layer is formed; (b) forming a p-n junction LED wafer having one p-type crystal surface and one n-type crystal surface; (c) applying a plurality of electrodes to said p-type crystal surface at a predetermined pitch and in rows and columns to define a predetermined two-dimensional pattern; (d) bonding the conductive layer on the insulative substrate and the n-type crystal surface of the LED wafer; (e) forming a plurality of first slits each extending along one of the rows and columns of the two-dimensional pattern, each of the first slits having a depth which extends from said p-type crystal surface of the LED wafer to the depth of the insulative substrate; and (f) forming a plurality of second slits each extending along the other of the rows and columns of the two-dimensional pattern, each of the second slits having a depth which extends from said p-type crystal surface of the LED wafer to a depth greater than the p-n junction but short of the insulative substrate, whereby said n-type crystal surface continuously contacts said conductive layer along said one of said columns and rows.
Claim 3
Dependent Claim
48 words
A method as claimed in claim 1, wherein the step (d) comprises the steps of (g) applying a conductive paste to the conductive layer and (h) pressing said other surface of the LED wafer to the conductive paste and then heating the LED wafer and the conductive paste.
Claim 4
Dependent Claim
15 words
A method as claimed in claim 1, wherein the step (d) is effected by solder.
Claim 5
Dependent Claim
15 words
A method as claimed in claim 1, wherein the step (d) is effected by eutectic.
Claim 6
Dependent Claim
21 words
A method as claimed in claim 1, wherein the steps (e) and (f) are effected by a rotary disc type cutter.
Claim 7
Dependent Claim
18 words
A method as claimed in claim 1, wherein the steps (e) and (f) are effected by a laser.
Claim 8
Dependent Claim
18 words
A method as claimed in claim 1, wherein the steps (e) and (f) are effected by photolithographic processes.
Claim 9
Dependent Claim
19 words
A method as claimed in claim 1, wherein the steps (e) and (f) are effected by a wire saw.
Claim 10
Dependent Claim
15 words
A method as claimed in claim 1, wherein the insulative substrate comprises a ceramic substrate.
Claim 11
Dependent Claim
24 words
A method as claimed in claim 1, wherein the LED wafer comprises at least one of the group comprising GaP, GaAsP, GaAls and GaAs.