US4538342A
Expired / Lapsed
US
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Forming platinum contacts to in-based group III-V compound devices
Assignee: Nokia Bell Labs
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Filing: 1984-06-15
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Granted: 1985-09-03
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Expires: 2004-06-15
Abstract
Abstract Electrical contacts with low specific-contact resistance to In-based Group III-V compound semiconductors (e.g., p-InGaAsP) are formed by electron beam depositing a thin Pt layer directly on the semiconductor and sintering at about 450°-525° C. for about 5-30 minutes. Light emitting diodes without dark spot defects can be fabricated using this technique.
Inventors
- 👤 Irfan Camlibel
- 👤 Aland K. Chin
- 👤 Brymer H. Chin
- 👤 Christie L. Zipfel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 16:49
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10F; H10F77/00; H10F77/20; H10H20/80; H10H20/81; H10H20/816; H10H20/83; H10H20/832; H10W; H10W72/00; H10W72/30; H10H20/822; H10H20/824; Y; Y10; Y10S; Y10S438/00; Y10S438/902; Y10S438/942; Y10S438/944
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
65 words
A method of fabricating a device, which includes forming a low specific-contact resistance electrical contact on a layer of an In-based, Group III-V compound semiconductor, comprising the steps of: (a) depositing a thin layer of essentially only Pt on said In-based layer, and (b) sintering said layers at a temperature of about 450°-525° C. for a time of about 5-30 minutes in a reducing ambient.
Claim 2
Independent Claim
65 words
A method of fabricating a device, which includes forming a low specific-contact resistance electrical contact on a layer of an In-based, Group III-V compound semiconductor, comprising the steps of: (a) depositing a thin layer of essentially only Pt on said In-based layer, and (b) sintering said layers at a temperature of about 450°-525° C. for a time of about 5-30 minutes in a reducing ambient.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein said Pt layer is about 100 to 2000 Å thick.
Claim 4
Dependent Claim
15 words
The method of claim 2 wherein said Pt layer is formed by electron beam deposition.
Claim 5
Dependent Claim
12 words
The method of claim 1 wherein said In-based layer comprises p-type InGaAsP.
Claim 6
Dependent Claim
12 words
The method of claim 1 wherein said In-based layer comprises p-type InGaAs.
Claim 7
Dependent Claim
30 words
The method of claim 4 wherein said specific-contact resistance is about 1×10 -5 Ω-cm 2 and said sintering step (b) takes place at about 500° C. for about 15-30 minutes.
Claim 8
Independent Claim
19 words
The method of claims 1, 2, 3, 4, 5 or 6 wherein said device comprises a light emitting diode.
Claim 9
Independent Claim
17 words
The method of claims 1, 2, 3, 4, 5 or 6 wherein said device comprises a laser.
Claim 10
Independent Claim
116 words
A method of fabricating a device, which includes a low specific-contact resistance electrical contact on a layer of an In-based, Group III-V compound semiconductor, comprising the steps of: (a) epitaxially growing said In-based layer as a p-type semiconductor composition selected from the group consisting of InGaAsP and InGaAs, (b) electron beam depositing a thin layer of essentially only Pt to a thickness of about 100 to 2000 Å on a restricted portion of said In-based layer through a shadow mask, (c) capping said In-based layer to prevent the out-diffusion of volatile elements therefrom, and (d) sintering said layers at a temperature of about 450°-525° C. for a time of about 5-30 minutes in a reducing ambient.
Claim 11
Independent Claim
116 words
A method of fabricating a device, which includes a low specific-contact resistance electrical contact on a layer of an In-based, Group III-V compound semiconductor, comprising the steps of: (a) epitaxially growing said In-based layer as a p-type semiconductor composition selected from the group consisting of InGaAsP and InGaAs, (b) electron beam depositing a thin layer of essentially only Pt to a thickness of about 100 to 2000 Å on a restricted portion of said In-based layer through a shadow mask, (c) capping said In-based layer to prevent the out-diffusion of volatile elements therefrom, and (d) sintering said layers at a temperature of about 450°-525° C. for a time of about 5-30 minutes in a reducing ambient.
Claim 12
Dependent Claim
20 words
The method of claim 9 wherein said electrical contact has a specific-contact resistance of about 1-2×10 -5 Ω-cm 2 .
Claim 13
Dependent Claim
29 words
The method of claim 10 wherein said resistance is about 1×10 -5 Ω-cm 2 and said sintering step (d) takes place at about 500° C. for about 15-30 minutes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-09-02 | 1989-03-04 | 1989-09-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-09-02 | 1993-03-04 | 1993-09-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-09-02 | 1997-03-04 | 1997-09-03 | $7700.00 | Window Closed / Lapsed |