US4287527A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Opto-electronic devices based on bulk crystals of complex semiconductors
Assignee: AT&T Inc
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Filing: 1979-09-07
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Granted: 1981-09-01
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Expires: 1999-09-07
Abstract
Abstract Opto-electronic devices such as photodetectors have been made based on bulk crystals of Ga x In 1-x P y As 1-y . These bulk crystals have high purity, e.g., less than 10 16 carriers/cm 3 and low defect densities, e.g., less than 10 6 cm -2 . The properties of these crystals lead to photodetectors with good quantum efficiencies.
Inventors
- 👤 Klaus J. Bachmann
- 👤 Charles T. Ryan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 07:43
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H10F77/1248; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227; H10F71/00; H10F71/127; H10F71/1272; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
59 words
A device comprising a rectifying junction between a bulk crystal and an interfacing material characterized in that said bulk crystal has a composition of Ga x In 1-x As y P 1-y where 0<x≦0.5 and 0<y<1, and has a defect density less than 10 6 cm -2 whereby current carriers are generated in said bulk crystal by infrared radiation.
Claim 2
Independent Claim
59 words
A device comprising a rectifying junction between a bulk crystal and an interfacing material characterized in that said bulk crystal has a composition of Ga x In 1-x As y P 1-y where 0<x≦0.5 and 0<y<1, and has a defect density less than 10 6 cm -2 whereby current carriers are generated in said bulk crystal by infrared radiation.
Claim 3
Dependent Claim
13 words
The device of claim 1 wherein said interfacing material has metallic conductivity properties.
Claim 4
Dependent Claim
23 words
The device of claim 2 wherein said interfacing material comprises a highly conductive material chosen from the group consisting of Au and Pt.
Claim 5
Dependent Claim
22 words
The device of claim 1 wherein said interfacing material also has the composition Ga x In 1-x As y P 1-y .
References Cited (Backward Citations)
US4075651A
Cited
US4213138A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-08-31 | 1985-03-02 | 1985-09-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-08-31 | 1989-03-02 | 1989-09-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-08-31 | 1993-03-02 | 1993-09-01 | $7700.00 | Window Closed / Lapsed |