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US4774556A
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Non-volatile semiconductor memory device
Assignee: Denso Corp
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Filing: 1986-07-21
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Granted: 1988-09-27
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Expires: 2006-07-21
Abstract
Abstract A non-volatile semiconductor memory device comprises a semiconductor substrate of a first conduction type, an impurity buried layer of a second conduction type formed at the surface of the semiconductor substrate for constituting either one of a drain region or a source region, an epitaxial layer of a second conduction type formed at the surface of said impurity buried layer, an insulatiang partition wall extended vertically from the surface of the epitaxial layer surrounding operation regions in the impurity buried layer for defining the operation regions therein, at least one electron holding portion extended vertically with a predetermined distance from the operation regions and disposed within the insulating partition wall apart from the operation region, the impurity buried layer or the drain region by an insulation film of such a thickness as causing a tunnel effect, control gates disposed within the insulation partition wall disposed on every electron holding portions on the side opposite to the operation regions and extended vertically with a certain gap from the electron maintaining portions, and a control gate disposed within the insulating partition wall on every electron holding portions on the opposite side to the operation region extended vertically and with a certain gap to the electron holding portions, and an impurity region of a second conduction type formed at the surface of the operation region for constituting the other of the drain region or the source region.
Inventors
- 👤 Tetsuo Fujii
- 👤 Nobuyoshi Sakakibara
- 👤 Toshio Sakakibara
- 👤 Hiroshi Iwasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:10
CPC Classifications
H; H10; H10B; H10B43/00; H10B43/30; H10B41/00; H10B41/20; H10B41/23; H10B41/27; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0411; H10D30/60; H10D30/68; H10D30/681; H10D30/683; H10D64/00; H10D64/01; H10D64/031; H10D64/035; H10B69/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/512; H10D64/513
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
235 words
A non-volatile semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; an impurity buried layer of a second conductivity type, different from said first conductivity type, formed at a surface of said semiconductor substrate, and constituting one of a drain region and a source region of a transistor of said semiconductor memory device; an epitaxial layer of said second conductivity type formed at a surface of said impurity buried layer; an insulating well extending from a surface of said epitaxial layer to said impurity buried layer, to form an independent vertical channel region coupled to said epitaxial layer; an impurity surface region of said second conductivity type formed at a surface of said independent vertical channel region and constituting the other of said drain region and said source region of said transistor; at least two electron accumulating regions formed in said insulating wall, separately facing said independent vertical channel region; a first insulation film between said electron accumulating regions and said insulating walls, of a thickness to cause an induced tunnel effect; and at least two control gate electrodes and a second insulation film, said at least two control gate electrodes extending vertically in said insulating wall, and separately facing each of said electron accumulating regions with said second insulation film therebetween, and controlling a conductivity of said independent vertical channel region between said impurity buried layer and said impurity surface region.
Claim 2
Dependent Claim
235 words
A non-volatile semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; an impurity buried layer of a second conductivity type, different from said first conductivity type, formed at a surface of said semiconductor substrate, and constituting one of a drain region and a source region of a transistor of said semiconductor memory device; an epitaxial layer of said second conductivity type formed at a surface of said impurity buried layer; an insulating well extending from a surface of said epitaxial layer to said impurity buried layer, to form an independent vertical channel region coupled to said epitaxial layer; an impurity surface region of said second conductivity type formed at a surface of said independent vertical channel region and constituting the other of said drain region and said source region of said transistor; at least two electron accumulating regions formed in said insulating wall, separately facing said independent vertical channel region; a first insulation film between said electron accumulating regions and said insulating walls, of a thickness to cause an induced tunnel effect; and at least two control gate electrodes and a second insulation film, said at least two control gate electrodes extending vertically in said insulating wall, and separately facing each of said electron accumulating regions with said second insulation film therebetween, and controlling a conductivity of said independent vertical channel region between said impurity buried layer and said impurity surface region.
Claim 3
Dependent Claim
42 words
A non-volatile semiconductor memory device according to claim 1, wherein said electron accumulating region is a floating gate electrode facing one of the impurity buried layer or said drain region by way of said induced tunnel effect caused by first insulation film.
Claim 4
Dependent Claim
33 words
A non-volatile semiconductor memory device according to claim 1, comprising two pairs of said control gate electrodes and said floating gate electrode, which face each other with said independent vertical channel region therebetween.
Claim 5
Dependent Claim
30 words
A non-volatile semiconductor memory device according to claim 1, comprising four pairs of said control gate electrodes and said floating gate electrode, which are surrounding said independent vertical channel region.
Claim 6
Dependent Claim
27 words
A non-volatile semiconductor memory device according to claim 1, wherein said impurity buried layer constitutes a common drain region or a common source region of plural transistors.
Claim 7
Dependent Claim
44 words
A non-volatile semiconductor memory device according to claim 1, further comprising a third insulation film, and an electrode formed on said impurity surface region by way of said third insulation film, wherein said insulation film has a thickness to induce an induced tunnel effect.
Claim 8
Dependent Claim
65 words
A non-volatile semiconductor memory device according to claim 1, further comprising a tunnel effect silicon oxide film which is in contact with the independent vertical channel region, and a silicon nitride layer between said tunnel effect silicon oxide film and said control gate electrode, and whereby said electron accumulating region is formed at a boundary between said silicon oxide film and said silicon nitride layer.
Claim 9
Dependent Claim
24 words
A non-volatile semiconductor memory device according to claim 7, further comprising an oxide layer between the silicon nitride layer and the control gate electrode.
Claim 10
Dependent Claim
42 words
A non-volatile semiconductor memory device according to claim 7, wherein the silicon nitride layer is disposed within the insulating wall surrounding the independent vertical channel, and further comprising two control gates, facing each other with the independent vertical channel region interposed therebetween.
Claim 11
Dependent Claim
25 words
A non-volatile semiconductor memory device according to claim 7, comprising four control gate electrodes, disposed within the insulating wall surrounding the independent vertical channel region.
Claim 12
Dependent Claim
27 words
A non-volatile semiconductor memory device according to claim 7, wherein the impurity buried layer constitutes a common drain region or a common source region of plural transistors.
Claim 13
Dependent Claim
43 words
A non-volatile semiconductor memory device according to claim 7, further comprising an insulating film formed on the impurity buried layer, and an electrode formed on said insulating film wherein said insulating film is of such a thickness to cause an induced tunnel effect.
Claim 14
Dependent Claim
203 words
A non-volatile semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a impurity buried substrate of a second conductivity type different from said first conductivity type, formed at a surface of said semiconductor substrate, for constituting one of a drain region and a source region of a transistor; an epitaxial layer of said second conductivity type formed at a surface of said impurity buried layer; an insulating wall extending from a surface of said epitaxial layer to said impurity buried layer to form an independent vertical channel region as a part of said epitaxial layer; an impurity surface region of said second conductivity type, formed at a surface of said independent vertical channel region and constituting the other of said drain region and said source region of said transistor; a silicon oxide film formed on said independent vertical channel region; a silicon nitride layer formed in said insulating wall, which faces said independent vertical channel region on said silicon oxide film, said silicon oxide film of a thickness to cause an induced tunnel effect; and at least two control gate electrodes extending vertically in said insulating wall, separately facing said independent vertical channel region with said silicon nitride layer therebetween.
Claim 15
Dependent Claim
203 words
A non-volatile semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a impurity buried substrate of a second conductivity type different from said first conductivity type, formed at a surface of said semiconductor substrate, for constituting one of a drain region and a source region of a transistor; an epitaxial layer of said second conductivity type formed at a surface of said impurity buried layer; an insulating wall extending from a surface of said epitaxial layer to said impurity buried layer to form an independent vertical channel region as a part of said epitaxial layer; an impurity surface region of said second conductivity type, formed at a surface of said independent vertical channel region and constituting the other of said drain region and said source region of said transistor; a silicon oxide film formed on said independent vertical channel region; a silicon nitride layer formed in said insulating wall, which faces said independent vertical channel region on said silicon oxide film, said silicon oxide film of a thickness to cause an induced tunnel effect; and at least two control gate electrodes extending vertically in said insulating wall, separately facing said independent vertical channel region with said silicon nitride layer therebetween.
Claim 16
Dependent Claim
219 words
A non-volatile semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a impurity buried layer of a second conductivity type formed at a surface of said semiconductor substrate, different from said first conductivity type, for constituting one of a drain region and a source region of a transistor; an epitaxial layer of said second conductivity type formed at a surface of said impurity buried layer; an insulating wall extending from a surface of said epitaxial layer to said impurity buried layer to form an independent vertical channel region as a part of said epitaxial layer; an impurity surface region of said second conductivity type formed at a surface of said independent vertical channel region, constituting the other of said drain region and said source region of said transistor; a silicon oxide film formed on said independent vertical channel region; at least one electron accumulating region, facing said independent vertical channel region; a first insulation film between said electron accumulating region and said insulating walls, of a thickness to cause an induced tunnel effect; a second insulation film; and at least one control gate electrode extending vertically in said insulating wall, and facing said electron accumulating region with said second insulation film therebetween, and controlling a conductivity between said impurity buried layer and said impurity surface region.
Claim 17
Dependent Claim
219 words
A non-volatile semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a impurity buried layer of a second conductivity type formed at a surface of said semiconductor substrate, different from said first conductivity type, for constituting one of a drain region and a source region of a transistor; an epitaxial layer of said second conductivity type formed at a surface of said impurity buried layer; an insulating wall extending from a surface of said epitaxial layer to said impurity buried layer to form an independent vertical channel region as a part of said epitaxial layer; an impurity surface region of said second conductivity type formed at a surface of said independent vertical channel region, constituting the other of said drain region and said source region of said transistor; a silicon oxide film formed on said independent vertical channel region; at least one electron accumulating region, facing said independent vertical channel region; a first insulation film between said electron accumulating region and said insulating walls, of a thickness to cause an induced tunnel effect; a second insulation film; and at least one control gate electrode extending vertically in said insulating wall, and facing said electron accumulating region with said second insulation film therebetween, and controlling a conductivity between said impurity buried layer and said impurity surface region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-09-27 | 1992-03-28 | 1992-09-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-27 | 1996-03-28 | 1996-09-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-27 | 2000-03-28 | 2000-09-27 | $7700.00 | Window Closed / Lapsed |