Method for the manufacture of a self-aligned metal contact

Claim 1

A method for the manufacture of a self-aligned metal contact on a semiconductor material which comprises the following steps in the sequence given: (a) covering the surface of said semiconductor material with a masking coating, (b) generating a masking element having an undercut form photolithographically from said masking coating, (c) implanting dopant under said surface of said semiconductor material through the use of said masking element, (d) directionally depositing contact metal on said semiconductor material using said masking element, (e) directionally depositing a layer suitable for subsequent lift-off above the areas in which the contacts are to be formed through the use of said masking element, (f) removing said masking element, (g) isotropically depositing a coating layer of electrically insulating material, (h) removing the isotropically deposited layer except for sidewall spacers by directional anisotropicf re-etching to thereby expose the surface of the semiconductor material between said sidewall spacers, and (i) applying a Schottky contact material to the exposed surface of said semiconductor material between said sidewall portions.

Claim 2

A method for the manufacture of a self-aligned metal contact on a semiconductor material which comprises the following steps in the sequence given: (a) covering the surface of said semiconductor material with a masking coating, (b) generating a masking element having an undercut form photolithographically from said masking coating, (c) implanting dopant under said surface of said semiconductor material through the use of said masking element, (d) directionally depositing contact metal on said semiconductor material using said masking element, (e) directionally depositing a layer suitable for subsequent lift-off above the areas in which the contacts are to be formed through the use of said masking element, (f) removing said masking element, (g) isotropically depositing a coating layer of electrically insulating material, (h) removing the isotropically deposited layer except for sidewall spacers by directional anisotropicf re-etching to thereby expose the surface of the semiconductor material between said sidewall spacers, and (i) applying a Schottky contact material to the exposed surface of said semiconductor material between said sidewall portions.

Claim 5

A method for the manufacture of a self-aligned metal contact on a semiconductor material which comprises the following steps in the sequence given: providing a semiconductor substrate having a dopant concentration in accordance with the desired source/drain doping, covering the surface of said semiconductor material with a layer of masking material, forming a masking element having an undercut form from said masking material, directionally depositing contact metal on said semiconductor material with the use of said masking element, directionally depositing a layer suitable for subsequent lift-off above the contact areas with the use of said masking element, removing said masking element, isotropically depositing a coating layer of electrically insulating material, removing the isotropically deposited layer except for sidewall spacers by directional anisotropic re-etching to thereby expose the surface of the semiconductor material between said sidewall spacers, said re-etching being carried out such as to produce a depression between the sidewalls whereby a gate region is provided with a predetermined reduced thickness compared to source regions, and applying a Schottky contact material to the exposed surface of said semiconductor material between said sidewall spacers.

Claim 6

A method for the manufacture of a self-aligned metal contact on a semiconductor material which comprises the following steps in the sequence given: providing a semiconductor substrate having a dopant concentration in accordance with the desired source/drain doping, covering the surface of said semiconductor material with a layer of masking material, forming a masking element having an undercut form from said masking material, directionally depositing contact metal on said semiconductor material with the use of said masking element, directionally depositing a layer suitable for subsequent lift-off above the contact areas with the use of said masking element, removing said masking element, isotropically depositing a coating layer of electrically insulating material, removing the isotropically deposited layer except for sidewall spacers by directional anisotropic re-etching to thereby expose the surface of the semiconductor material between said sidewall spacers, said re-etching being carried out such as to produce a depression between the sidewalls whereby a gate region is provided with a predetermined reduced thickness compared to source regions, and applying a Schottky contact material to the exposed surface of said semiconductor material between said sidewall spacers.