US4774206A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for the manufacture of a self-aligned metal contact
Assignee: Siemens AG
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Filing: 1987-03-18
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Granted: 1988-09-27
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Expires: 2007-03-18
Abstract
Abstract The manufacture of a self-aligned gate contact having a very short gate length measuring, for example, 0.3 to 0.1 micron wherein photolithography is carried out together with isotropic deposition to produce a gate contact having an extremely low lead resistance, the method utilizing a masking element which is removed by a lift-off technique.
Inventors
- 👤 Josef Willer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:06
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D30/0614; H10D64/00; H10D64/01; H10D64/012; H10D64/0124; H10D64/0125; Y; Y10; Y10S; Y10S148/00; Y10S148/10; Y10S148/139
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
167 words
A method for the manufacture of a self-aligned metal contact on a semiconductor material which comprises the following steps in the sequence given: (a) covering the surface of said semiconductor material with a masking coating, (b) generating a masking element having an undercut form photolithographically from said masking coating, (c) implanting dopant under said surface of said semiconductor material through the use of said masking element, (d) directionally depositing contact metal on said semiconductor material using said masking element, (e) directionally depositing a layer suitable for subsequent lift-off above the areas in which the contacts are to be formed through the use of said masking element, (f) removing said masking element, (g) isotropically depositing a coating layer of electrically insulating material, (h) removing the isotropically deposited layer except for sidewall spacers by directional anisotropicf re-etching to thereby expose the surface of the semiconductor material between said sidewall spacers, and (i) applying a Schottky contact material to the exposed surface of said semiconductor material between said sidewall portions.
Claim 2
Independent Claim
167 words
A method for the manufacture of a self-aligned metal contact on a semiconductor material which comprises the following steps in the sequence given: (a) covering the surface of said semiconductor material with a masking coating, (b) generating a masking element having an undercut form photolithographically from said masking coating, (c) implanting dopant under said surface of said semiconductor material through the use of said masking element, (d) directionally depositing contact metal on said semiconductor material using said masking element, (e) directionally depositing a layer suitable for subsequent lift-off above the areas in which the contacts are to be formed through the use of said masking element, (f) removing said masking element, (g) isotropically depositing a coating layer of electrically insulating material, (h) removing the isotropically deposited layer except for sidewall spacers by directional anisotropicf re-etching to thereby expose the surface of the semiconductor material between said sidewall spacers, and (i) applying a Schottky contact material to the exposed surface of said semiconductor material between said sidewall portions.
Claim 3
Dependent Claim
20 words
A method according to claim 1 which includes the step of annealing damage in said semiconductor surface before said re-etching.
Claim 4
Dependent Claim
20 words
A method according to claim 1 which includes the step of annealing damage in said semiconductor surface after said re-etching.
Claim 5
Independent Claim
183 words
A method for the manufacture of a self-aligned metal contact on a semiconductor material which comprises the following steps in the sequence given: providing a semiconductor substrate having a dopant concentration in accordance with the desired source/drain doping, covering the surface of said semiconductor material with a layer of masking material, forming a masking element having an undercut form from said masking material, directionally depositing contact metal on said semiconductor material with the use of said masking element, directionally depositing a layer suitable for subsequent lift-off above the contact areas with the use of said masking element, removing said masking element, isotropically depositing a coating layer of electrically insulating material, removing the isotropically deposited layer except for sidewall spacers by directional anisotropic re-etching to thereby expose the surface of the semiconductor material between said sidewall spacers, said re-etching being carried out such as to produce a depression between the sidewalls whereby a gate region is provided with a predetermined reduced thickness compared to source regions, and applying a Schottky contact material to the exposed surface of said semiconductor material between said sidewall spacers.
Claim 6
Independent Claim
183 words
A method for the manufacture of a self-aligned metal contact on a semiconductor material which comprises the following steps in the sequence given: providing a semiconductor substrate having a dopant concentration in accordance with the desired source/drain doping, covering the surface of said semiconductor material with a layer of masking material, forming a masking element having an undercut form from said masking material, directionally depositing contact metal on said semiconductor material with the use of said masking element, directionally depositing a layer suitable for subsequent lift-off above the contact areas with the use of said masking element, removing said masking element, isotropically depositing a coating layer of electrically insulating material, removing the isotropically deposited layer except for sidewall spacers by directional anisotropic re-etching to thereby expose the surface of the semiconductor material between said sidewall spacers, said re-etching being carried out such as to produce a depression between the sidewalls whereby a gate region is provided with a predetermined reduced thickness compared to source regions, and applying a Schottky contact material to the exposed surface of said semiconductor material between said sidewall spacers.
Claim 7
Dependent Claim
69 words
A method according to claim 1 wherein said masking element is generated by: applying a photoresist layer on the surface of said semiconductor material, forming a recess in said photoresist layer corresponding to the shape of said masking element, covering the photoresist layer directionally with a coating to provide a predetermined surface contour, isotropically etching said layer partly to leave said surface contour, and removing the remaining photoresist layer.
Claim 8
Dependent Claim
69 words
A method according to claim 4 wherein said masking layer is generated by: applying a photoresist layer on the surface of said semiconductor material, forming a recess in said photoresist layer corresponding to the shape of said masking element, covering the photoresist layer directionally with a coating to provide a predetermined surface contour, isotropically etching said layer partly to leave said surface contour, and removing the remaining photoresist layer.
Claim 9
Dependent Claim
15 words
A method according to claim 1 wherein said semiconductor is a Group III-V semiconductor material.
References Cited (Backward Citations)
US3996656A
Cited
US4144101A
Cited
US4326330A
Cited
US4339305A
Cited
US4525919A
Cited
US4507853A
Cited
US4489481A
Cited
US4551905A
Cited
US4593307A
Cited
US4599790A
Cited
US4694564A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-09-27 | 1992-03-28 | 1992-09-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-27 | 1996-03-28 | 1996-09-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-27 | 2000-03-28 | 2000-09-27 | $7700.00 | Window Closed / Lapsed |