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Patent US4772854A successfully refreshed from Google Patents.
US4772854A
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US
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All optical repeater
Assignee: Iconectiv LLC
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Filing: 1986-12-24
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Granted: 1988-09-20
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Expires: 2006-12-24
Abstract
Abstract An all-optical device containing saturable gain, saturable loss and unsaturable loss regions which functions to transform weak, distorted optical pulses into uniform standard-shape pulses. The device performs thresholding, amplification and pulse shaping as required from an optical repeater, and may be implemented in semiconductor technology.
Inventors
- 👤 Yaron Silberberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 10:35
CPC Classifications
H; H04; H04B; H04B10/00; H04B10/29; H04B10/291; H04B10/2912; H04B10/2914; H01; H01S; H01S3/00; H01S3/005; H01S3/0057; H01S5/00; H01S5/50; H01S5/04; H01S5/042; H01S5/0425; H01S5/04256; H01S5/06; H01S5/0601; H01S5/062; H01S5/0625
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
278 words
An optical amplifier comprising a substrate composed of a semiconductor material; a semiconductor layered region disposed on said substrate including a first semiconductor layer disposed on said substrate; an active second semiconductor layer forming an elongated optical waveguide; and a third semiconductor layer, said active second semiconductor layer being sandwiched between and continguous with said first and second semiconductor layers; said first and third conductor layers being of lower refractive index than said second layer; first and second semiconductor regions disposed on said substrate and laterally bounding said layered region, said first and said second semiconductor regions having a lower refractive index than said active layer; first and second interdigitated electrodes disposed on said third semiconductor layer forming a plurality of fingers extending along the direction of light propagation in said elongated optical waveguide; means for biasing said first electrode so that a first level of electrical current is applied to a first portion of said semiconductor layered region disposed beneath said first electrode to create a region of optical gain so that an optical pulse propagating in said elongated optical waveguide is amplified in said first portion of said semiconductor layered region; and means for biasing said second electrode so that a second level of electrical current different from said first level is applied to a second portion of said semiconductor layered region disposed beneath said second electrode to create a region of saturable optical loss in said second portion so that said optical pulse propagating in said elongated optical waveguide saturates the optical loss in said second portion and is amplified as it traverses said first and said second portions of alternating optical gain and loss.
Claim 2
Dependent Claim
278 words
An optical amplifier comprising a substrate composed of a semiconductor material; a semiconductor layered region disposed on said substrate including a first semiconductor layer disposed on said substrate; an active second semiconductor layer forming an elongated optical waveguide; and a third semiconductor layer, said active second semiconductor layer being sandwiched between and continguous with said first and second semiconductor layers; said first and third conductor layers being of lower refractive index than said second layer; first and second semiconductor regions disposed on said substrate and laterally bounding said layered region, said first and said second semiconductor regions having a lower refractive index than said active layer; first and second interdigitated electrodes disposed on said third semiconductor layer forming a plurality of fingers extending along the direction of light propagation in said elongated optical waveguide; means for biasing said first electrode so that a first level of electrical current is applied to a first portion of said semiconductor layered region disposed beneath said first electrode to create a region of optical gain so that an optical pulse propagating in said elongated optical waveguide is amplified in said first portion of said semiconductor layered region; and means for biasing said second electrode so that a second level of electrical current different from said first level is applied to a second portion of said semiconductor layered region disposed beneath said second electrode to create a region of saturable optical loss in said second portion so that said optical pulse propagating in said elongated optical waveguide saturates the optical loss in said second portion and is amplified as it traverses said first and said second portions of alternating optical gain and loss.
Claim 3
Dependent Claim
32 words
An amplifier as defined in claim 1, wherein said first semiconductor layer is composed of AlGaAs, said second semiconductor layer is composed of GaAs, and third semiconductor layer is composed of AlGaAs.
Claim 4
Dependent Claim
18 words
An amplifier as defined in claim 1, wherein said first and second semiconductor regions are composed of AlGaAs.
Claim 5
Dependent Claim
16 words
An amplifier as defined in claim 1, wherein said substrate is composed of n-type gallium arsenide.
Claim 6
Dependent Claim
22 words
An amplifier as defined in claim 1, wherein the width of said first and said second electrodes is greater than a micron.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1991-09-20 | 1992-03-21 | 1992-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-20 | 1996-03-21 | 1996-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-20 | 2000-03-21 | 2000-09-20 | $7700.00 | Window Closed / Lapsed |