US4435809A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Passively mode locked laser having a saturable absorber
Assignee: AT&T Inc
•
Filing: 1981-09-14
•
Granted: 1984-03-06
•
Expires: 2001-09-14
Abstract
Abstract A region of saturable absorption is produced in semiconductor lasers by proton bombardment and results in subpicosecond optical pulses.
Inventors
- 👤 Won-Tien Tsang
- 👤 Jan P. van der Ziel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 05:59
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/06; H01S5/065; H01S5/0657; H01S5/0615
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
40 words
A semiconductor laser having an active layer, first and second cladding layers on opposed surfaces of said active layer, characterized in that said active layer further comprises a saturable absorption region, said saturable absorber region being a proton bombarded region.
Claim 2
Dependent Claim
40 words
A semiconductor laser having an active layer, first and second cladding layers on opposed surfaces of said active layer, characterized in that said active layer further comprises a saturable absorption region, said saturable absorber region being a proton bombarded region.
Claim 3
Dependent Claim
23 words
A semiconductor layer as recited in claim 1 in which said proton bombarded region is adjacent an exit face of said active layer.
Claim 4
Dependent Claim
27 words
A semiconductor laser is recited in claim 2 in which said proton bombarded region is at a dosage level of at least 3×10 15 cm -2 .
Claim 5
Dependent Claim
26 words
A semiconductor laser as recited in claim 3 in which said proton bombarded region is at a dosage level less than 10 16 cm -2 .
Claim 6
Dependent Claim
23 words
A semiconductor laser as recited in claim 4 in which said saturable absorption region has a length between 6 μm and 50 μm.
Claim 7
Dependent Claim
17 words
A semiconductor laser as recited in claim 5 in which said laser further comprises an external cavity.
Claim 8
Dependent Claim
19 words
A semiconductor laser as recited in claim 6 in which said external cavity comprises a mirror and a lens.
Claim 9
Dependent Claim
33 words
A semiconductor laser as recited in claim 7 in which said mirror and said lens are optically coupled by an optical fiber, said mirror and lens forming an integral part of said fiber.
Claim 10
Dependent Claim
30 words
A semiconductor laser as recited in claim 5 or 8 in which said active layer comprises Al x Ga 1-x As, x is less than or equal to approximately 0.08.
References Cited (Backward Citations)
US3654497A
Cited
US4325034A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-03-06 | 1987-09-05 | 1988-03-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-03-06 | 1991-09-05 | 1992-03-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-03-06 | 1995-09-05 | 1996-03-06 | $7700.00 | Window Closed / Lapsed |