US4772565A
Expired / Lapsed
US
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Method of manufacturing solid-state image sensor
Assignee: Toshiba Corp
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Filing: 1987-05-20
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Granted: 1988-09-20
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Expires: 2007-05-20
Abstract
Abstract A method of manufacturing a solid-state image sensor comprises the steps of preparing a solid-state image sensor substrate in which a signal charge storing diode and a signal charge readout section are formed and forming, as a photoelectric conversion section, a photoconductive film having an amorphous silicon film on the substrate. The amorphous silicon film is formed by introducing a source gas containing silicon compounds on the substrate and decomposing the source gas by radiating ultraviolet light on the source gas while the solid-state image sensor substrate is kept at a temperature of 100° to 350° C.
Inventors
- 👤 Takaaki Kamimura
- 👤 Hidetoshi Nozaki
- 👤 Masahiko Hirose
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:16
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F39/00; H10F39/10; H10F39/12; H10F39/191; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3208; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3411; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
129 words
A method of manufacturing a solid-state image sensor, comprising the steps of: preparing a solid-state image sensor substrate provided with a signal charge storing diode and a signal charge readout section; and forming, as a photoelectric conversion section, a photoconductive film having an amorphous silicon film on the substrate, the improvement in which the amorphous silicon film is deposited by introducing a source gas set at a pressure set at 1×10 -2 to 10 Torr and containing mercury vapor and silicon compounds of 60 vol. % or more concentration on the substrate and decomposing the source gas by radiating ultraviolet light having a wavelength of 1000 to 3000 Å on the source gas while the solid-state image sensor substrate is kept at a temperature of 150° to 270° C.
Claim 2
Independent Claim
129 words
A method of manufacturing a solid-state image sensor, comprising the steps of: preparing a solid-state image sensor substrate provided with a signal charge storing diode and a signal charge readout section; and forming, as a photoelectric conversion section, a photoconductive film having an amorphous silicon film on the substrate, the improvement in which the amorphous silicon film is deposited by introducing a source gas set at a pressure set at 1×10 -2 to 10 Torr and containing mercury vapor and silicon compounds of 60 vol. % or more concentration on the substrate and decomposing the source gas by radiating ultraviolet light having a wavelength of 1000 to 3000 Å on the source gas while the solid-state image sensor substrate is kept at a temperature of 150° to 270° C.
Claim 3
Dependent Claim
18 words
A method according to claim 1, wherein said ultraviolet light is 254 nm and 185 nm in wavelength.
Claim 4
Dependent Claim
25 words
A method according to claim 1, wherein said amorphous silicon film is formed on an electrode made of titanium which is formed on said substrate.
Claim 5
Dependent Claim
20 words
A method according to claim 1, wherein said amorphous silicon film is formed on a BPSG layer of said substrate.
Claim 6
Dependent Claim
34 words
A method according to claim 1, wherein said amorphous silicon film consists of an i-type a-SiC film, i-type a-Si film and p-type a-Sic film which are formed in this order relative to the substrate.
Claim 7
Independent Claim
90 words
A method of manufacturing a solid-state image sensor comprising the steps of: holding, in a film depositing chamber, a solid-state image sensor substrate provided with a signal charge storing diode and a signal charge readout section; treating the surface of the solid-state image sensor substrate by atomic hydrogen; supplying a source gas containing silicon compounds to said film depositing chamber after said treating step; and radiating light on one surface of the substrate for a predetermined period of time, thereby depositing a photoconductive amorphous silicon film by a photochemical method.
Claim 8
Independent Claim
90 words
A method of manufacturing a solid-state image sensor comprising the steps of: holding, in a film depositing chamber, a solid-state image sensor substrate provided with a signal charge storing diode and a signal charge readout section; treating the surface of the solid-state image sensor substrate by atomic hydrogen; supplying a source gas containing silicon compounds to said film depositing chamber after said treating step; and radiating light on one surface of the substrate for a predetermined period of time, thereby depositing a photoconductive amorphous silicon film by a photochemical method.
Claim 9
Dependent Claim
54 words
A method according to claim 6, wherein the surface treatment step has the steps of: supplying a hydrogen gas of a pressure within the range of 0.1 to 10 Torr into said film depositing chamber holding a substrate therein; and radiating light onto the hydrogen gas, thereby converting the hydrogen gas to atomic hydrogen.
Claim 10
Dependent Claim
30 words
A method according to claim 7, wherein the light for converting the hydrogen gas to the atomic hydrogen and decomposing the source gas is supplied from the same light source.
Claim 11
Dependent Claim
22 words
A method according to claim 6, wherein a time period of said step of treating the surface is 5 to 100 minutes.
Claim 12
Independent Claim
67 words
A method of manufacturing a solid-state image sensor, comprising the steps of: treating the surface of a solid-state image sensor substrate provided with a signal charge storing diode and a signal charge readout section by producing atomic hydrogen in accordance with a mercury-sensitized method; and forming a photoconductive layer on the treated surface of the substrate by depositing an amorphous silicon film by a mercury-sensitized photochemical method.
Claim 13
Independent Claim
67 words
A method of manufacturing a solid-state image sensor, comprising the steps of: treating the surface of a solid-state image sensor substrate provided with a signal charge storing diode and a signal charge readout section by producing atomic hydrogen in accordance with a mercury-sensitized method; and forming a photoconductive layer on the treated surface of the substrate by depositing an amorphous silicon film by a mercury-sensitized photochemical method.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-09-20 | 1992-03-21 | 1992-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-20 | 1996-03-21 | 1996-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-20 | 2000-03-21 | 2000-09-20 | $7700.00 | Window Closed / Lapsed |