US4767950A
Expired / Lapsed
US
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MOS inverter circuit having two different supply voltages
Assignee: Siemens AG
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Filing: 1986-07-07
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Granted: 1988-08-30
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Expires: 2006-07-07
Abstract
Abstract A MOS inverter circuit includes a first supply voltage source, a second supply voltage source being higher than the first supply voltage source, a control MOS FET of the enhancement type, a first load MOS FET of the depletion type connected to the control MOS FET, a parallel circuit of a second load MOS FET of the depletion type and a third MOS FET, the parallel circuit being connected in series with the first load MOS FET, the third MOS FET having a controlled path connected to the first supply voltage source, and the first and second load MOS FET's having controlled paths interconnected in series and connected to the second supply voltage source.
Inventors
- 👤 Hartmut Schrenk
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 15:40
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/08; H03K19/094; H03K19/0944; H03K19/09441; H03K19/09443; H03K19/09445; H03K19/0008; H03K19/0013
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
217 words
MOS inverter circuit having MOS FET transistors, each having a source, drain and a gate comprising a first supply voltage source, a second supply voltage source being higher than said first supply voltage source, a control MOS FET of the enhancement type being connected at its gate to an input voltage, a first MOS FET being a load MOS FET of the depletion type being connected at its source to the drain of said control MOS FET, forming a first node for supplying an output voltage, a second MOS FET being a load MOS FET, also of the depletion type and a third MOS FET of the enhancement type, said second and third MOS FET being connected together at their respective soruce to source forming a second node and forming a two-transistor circuit, the second node being connected with the drain of said first MOS FET, the gates of said first and second MOS FET being connected to said first node, said third MOS FET having a controlled path, and being connected with its drain and gate as a diode to said first supply voltage source, and said first and second MOS FET's having their controlled drain-source paths interconnected in series and connected at the drain of the second MOS FET to said second supply voltage source.
Claim 2
Dependent Claim
217 words
MOS inverter circuit having MOS FET transistors, each having a source, drain and a gate comprising a first supply voltage source, a second supply voltage source being higher than said first supply voltage source, a control MOS FET of the enhancement type being connected at its gate to an input voltage, a first MOS FET being a load MOS FET of the depletion type being connected at its source to the drain of said control MOS FET, forming a first node for supplying an output voltage, a second MOS FET being a load MOS FET, also of the depletion type and a third MOS FET of the enhancement type, said second and third MOS FET being connected together at their respective soruce to source forming a second node and forming a two-transistor circuit, the second node being connected with the drain of said first MOS FET, the gates of said first and second MOS FET being connected to said first node, said third MOS FET having a controlled path, and being connected with its drain and gate as a diode to said first supply voltage source, and said first and second MOS FET's having their controlled drain-source paths interconnected in series and connected at the drain of the second MOS FET to said second supply voltage source.
Claim 3
Dependent Claim
19 words
MOS inverter circuit according to claim 1, wherein said third MOS FET conducts better than said first MOS FET.
Claim 4
Dependent Claim
17 words
MOS inverter circuit according to claim 1, wherein said third MOS FET has a low cut-off voltage.
Claim 5
Dependent Claim
237 words
MOS inverter circuit having MOS FET transistors, each having a source, drain and a gate, comprising a first supply voltage source; a second supply voltage source being higher than said first supply voltage source; a control MOS FET of the enhancement type being connected at its gate to an input voltage; a first MOS FET being a load MOS FET of the depletion type being connected at its source to the drain of said control MOS FET, forming a first node for supplying an output voltage; a second MOS FET being a load MOS FET, also of the depletion type; a third MOS FET of the enhancement type; said second and third MOS FET being connected together at their respective source to source forming a second node, and forming a two-transistor circuit, the second node being connected with the drain of said first MOS FET; said third MOS FET having a controlled path, and being connected with its drain and gate as a diode to said first supply voltage source; said first and second MOS FET's having controlled paths connected in series and connected to said second supply voltage source; said first MOS FET being interconnected at its drain to said second node; and including a fourth MOS FET of the depletion type connected with its drain-source path in series with said first and second MOS FET's and having a control input connected to said second node.
Claim 6
Dependent Claim
237 words
MOS inverter circuit having MOS FET transistors, each having a source, drain and a gate, comprising a first supply voltage source; a second supply voltage source being higher than said first supply voltage source; a control MOS FET of the enhancement type being connected at its gate to an input voltage; a first MOS FET being a load MOS FET of the depletion type being connected at its source to the drain of said control MOS FET, forming a first node for supplying an output voltage; a second MOS FET being a load MOS FET, also of the depletion type; a third MOS FET of the enhancement type; said second and third MOS FET being connected together at their respective source to source forming a second node, and forming a two-transistor circuit, the second node being connected with the drain of said first MOS FET; said third MOS FET having a controlled path, and being connected with its drain and gate as a diode to said first supply voltage source; said first and second MOS FET's having controlled paths connected in series and connected to said second supply voltage source; said first MOS FET being interconnected at its drain to said second node; and including a fourth MOS FET of the depletion type connected with its drain-source path in series with said first and second MOS FET's and having a control input connected to said second node.
Claim 7
Dependent Claim
59 words
MOS inverter circuit according to claim 4, wherein said first, second and third MOS FET's are interconnected at the second node, and said control MOS FET, first MOS FET and third MOS FET form a voltage divider wherein the absolute value of the cut-off voltage of said second MOS FET is smaller than the voltage at said second node.
Claim 8
Dependent Claim
31 words
MOS inverter circuit according to claim 5, wherein said third MOS FET has a lower cut-off voltage than the absolute value of the cut-off voltage of said second load MOS FET.
Claim 9
Dependent Claim
19 words
MOS inverter circuit according to claim 6, wherein said third MOS FET conducts better than said first MOS FET.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-30 | 1992-02-29 | 1992-08-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-30 | 1996-02-29 | 1996-08-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-30 | 2000-02-29 | 2000-08-30 | $7700.00 | Window Closed / Lapsed |