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US4766477A
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Semiconductor device including a semiconductor layer having a polycrystalline silicon film with selected atomic constituency
Assignee: Canon Inc
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Filing: 1986-07-11
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Granted: 1988-08-23
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Expires: 2006-07-11
Abstract
Abstract A semiconductor device mainly comprises a semiconductor layer of a polycrystalline silicon film containing at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen as a constituent.
Inventors
- 👤 Katsumi Nakagawa
- 👤 Toshiyuki Komatsu
- 👤 Yoshiyuki Osada
- 👤 Satoshi Omata
- 👤 Yutaka Hirai
- 👤 Takashi Nakagiri
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:44
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/164; H10F77/1642; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D62/00; H10D62/40; H10D62/80; H10D62/83; H10D62/834; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/546; Y10; Y10S; Y10S148/00; Y10S148/122
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
97 words
A semiconductor device which comprises a semiconductor layer of a polycrystalline silicon film containing as a constituent at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen, the semiconductor layer having an X-ray diffraction pattern or an electron beam diffraction pattern of which the orientation strength at the ( 220) plane is 30% or more based on the total orientation strength, wherein said polycrystalline silicon film consists essentially of crystal grains having an average particle size of 200 Å or larger and contains hydrogen atoms in an amount of 0.01-3 atomic %.
Claim 2
Dependent Claim
97 words
A semiconductor device which comprises a semiconductor layer of a polycrystalline silicon film containing as a constituent at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen, the semiconductor layer having an X-ray diffraction pattern or an electron beam diffraction pattern of which the orientation strength at the ( 220) plane is 30% or more based on the total orientation strength, wherein said polycrystalline silicon film consists essentially of crystal grains having an average particle size of 200 Å or larger and contains hydrogen atoms in an amount of 0.01-3 atomic %.
Claim 3
Dependent Claim
21 words
A semiconductor device according to claim 1, wherein the polycrystalline silicon contains carbon atoms in an amount of 0.01-10 atomic %.
Claim 4
Dependent Claim
21 words
A semiconductor device according to claim 1, wherein the polycrystalline silicon contains sulfur atoms in an amount of 0.01-5 atomic %.
Claim 5
Dependent Claim
21 words
A semiconductor device according to claim 1, wherein the polycrystalline silicon contains nitrogen atoms in an amount of 0.01-5 atomic %.
Claim 6
Dependent Claim
21 words
A semiconductor device according to claim 1, wherein the polycrystalline silicon contains oxygen atoms in an amount of 0.03-5 atomic %.
Claim 7
Dependent Claim
23 words
A semiconductor device according to claim 1, wherein the polycrystalline silicon contains hydrogen atoms in an amount of 3 atomic % or less.
Claim 8
Dependent Claim
28 words
A semiconductor device according to claim 1, wherein the semiconductor layer of a polycrystalline silicon film has a maximum surface unevenness of substantially not more than 800 Å.
Claim 9
Dependent Claim
54 words
A semiconductor device according to claim 1, wherein the semiconductor layer of a polycrystalline silicon film has etching rate of 20 Å/sec or less by an etchant comprising a hydrofluoric acid (50 vol. % aqueous solution), nitric acid (d=1.38, 60 vol. % aqueous solution) and glacial acetic acid at a volume ratio of 1:3:6.
Claim 10
Dependent Claim
21 words
A semiconductor device according to claim 1, wherein the polycrystalline silicon has an average particle size of 200 Å or larger.
Claim 11
Dependent Claim
21 words
A semiconductor device according to claim 1, wherein the polycrystalline silicon film is prepared according to a thin film forming technique.
Claim 12
Dependent Claim
126 words
A semiconductor device which comprises: a substrate, a semiconductor layer of a polycrystalline silicon film formed on the substrate and containing as a constituent at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen atoms, the semiconductor layer having an X-ray diffraction pattern or an electron beam diffraction pattern of which the orientation strength at the (220) plane is 30% or more based on the total orientation strength, a drain region and source region formed on the surface of the semiconductor layer, an insulating layer provided between the drain and source regions, a gate electrode provided on the insulating layer, a source electrode in electrical contact with the source region, and a drain electrode in electrical contact with the drain region.
Claim 13
Dependent Claim
126 words
A semiconductor device which comprises: a substrate, a semiconductor layer of a polycrystalline silicon film formed on the substrate and containing as a constituent at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen atoms, the semiconductor layer having an X-ray diffraction pattern or an electron beam diffraction pattern of which the orientation strength at the (220) plane is 30% or more based on the total orientation strength, a drain region and source region formed on the surface of the semiconductor layer, an insulating layer provided between the drain and source regions, a gate electrode provided on the insulating layer, a source electrode in electrical contact with the source region, and a drain electrode in electrical contact with the drain region.
Claim 14
Dependent Claim
21 words
A semiconductor device according to claim 11, wherein the polycrystalline silicon contains carbon atoms in an amount of 0.01-10 atomic %.
Claim 15
Dependent Claim
21 words
A semiconductor device according to claim 11, wherein the polycrystalline silicon contains sulfur atoms in an amount of 0.01-5 atomic %.
Claim 16
Dependent Claim
21 words
A semiconductor device according to claim 11, wherein the polycrystalline silicon contains nitrogen atoms in an amount of 0.01-5 atomic %.
Claim 17
Dependent Claim
21 words
A semiconductor device according to claim 11, wherein the polycrystalline silicon contains oxygen atoms in an amount of 0.03-5 atomic %.
Claim 18
Dependent Claim
23 words
A semiconductor device according to claim 11, wherein the polycrystalline silicon contains hydrogen atoms in an amount of 3 atomic % or less.
Claim 19
Dependent Claim
28 words
A semiconductor device according to claim 11, wherein the semiconductor layer of a polycrystalline silicon film has a maximum surface unevenness of substantially not more than 800 Å.
Claim 20
Dependent Claim
54 words
A semiconductor device according to claim 11, wherein the semiconductor layer of a polycrystalline silicon film has etching rate of 20 Å/sec or less by an etchant comprising a hydrofluoric acid (50 vol. % aqueous solution), nitric acid (d=1.38, 60 vol. % aqueous solution) and glacial acetic acid at a volume ratio of 1:3:6.
Claim 21
Dependent Claim
21 words
A semiconductor device according to claim 11, wherein the polycrystalline silicon has an average particle size of 200 Å or larger.
Claim 22
Dependent Claim
21 words
A semiconductor device according to claim 11, wherein the polycrystalline silicon film is prepared according to a thin film forming technique.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-23 | 1992-02-22 | 1992-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-23 | 1996-02-22 | 1996-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-23 | 2000-02-22 | 2000-08-23 | $7700.00 | Window Closed / Lapsed |