US4764485A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing via holes in polymer dielectrics
Assignee: General Electric Co
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Filing: 1987-01-05
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Granted: 1988-08-16
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Expires: 2007-01-05
Abstract
Abstract A method for producing a hole in a polymer film includes the steps of depositing a conductive layer onto the polymer film and irradiating a spot on the layer with a burst of focused laser energy at a level sufficient to form an opening in the film and, subsequently, plasma etching the film so as to form a hole of desired depth in the polymer film underlying the opening in the conductive layer. This method is particularly applicable to the formation of multichip intergrated circuit packages in which a plurality of chips formed in a semiconductor wafer are coated with a polymer film covering the chips and the substrates. The holes are provided for the purpose of interconnecting selected chip contact pads via a deposited conductive layer which overlies the film and fills the holes.
Inventors
- 👤 James A. Loughran
- 👤 James G. McMullen
- 👤 Alexander J. Yerman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:03
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/0011; H05K3/0017; H05K3/0041; B; B23; B23K; B23K26/00; B23K26/0006; B23K26/36; B23K26/361; B26; B26F; B26F1/00; B26F1/26; B26F1/31; B29; B29C; B29C59/00; B29C59/14; H05K3/0026; H05K3/0032; H05K3/0038; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10W; H10W70/00; H10W70/60; H10W70/611; H10W70/614; B23K2101/00; B23K2101/34; B23K2103/00; B23K2103/08; B23K2103/12; B23K2103/16; B23K2103/166; B23K2103/172; B23K2103/18; B23K2103/26; B23K2103/30; B23K2103/42; B23K2103/50; H05K2203/00; H05K2203/05; H05K2203/0548; H05K2203/0554; H05K2203/10; H05K2203/107; H05K3/0055; Y; Y10; Y10S; Y10S148/00; Y10S148/091; Y10S148/092; Y10S148/093; Y10S148/094; Y10S148/106; Y10S438/00; Y10S438/94; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
107 words
A method for producing via holes in a polymer film without employment of a mask, said method comprising the steps of: coating said film with a thin conductive layer; successively irradiating single spots at desired locations on said layer, directly above where said via holes are desired, with a burst of electromagnetic energy, each said burst of energy being focussed on a selected one of said spots at a time and being of a level sufficient to evaporate portions of said layer thereat and thereby create openings in said layer; and plasma etching said film so as to create said via holes therein directly below said openings.
Claim 2
Independent Claim
107 words
A method for producing via holes in a polymer film without employment of a mask, said method comprising the steps of: coating said film with a thin conductive layer; successively irradiating single spots at desired locations on said layer, directly above where said via holes are desired, with a burst of electromagnetic energy, each said burst of energy being focussed on a selected one of said spots at a time and being of a level sufficient to evaporate portions of said layer thereat and thereby create openings in said layer; and plasma etching said film so as to create said via holes therein directly below said openings.
Claim 3
Dependent Claim
14 words
The method of claim 1 wherein said electromagnetic energy is produced by a laser.
Claim 4
Dependent Claim
13 words
The method of claim 2 in which said laser is an xenon laser.
Claim 5
Dependent Claim
22 words
The method of claim 2 in which said laser operates at a wavelength in the range of approximately 0.48 to 0.54 microns.
Claim 6
Dependent Claim
20 words
The method of claim 1 in which said spots are each in the range of approximately 50-500 microns in diameter.
Claim 7
Dependent Claim
19 words
The method of claim 1 in which said film is from approximately 5 to approximately 50 microns in thickness.
Claim 8
Dependent Claim
15 words
The method of claim 2 in which said laser is operated in a pulsed mode.
Claim 9
Dependent Claim
25 words
The method of claim 1 in which said polymer film is selected from the group consisting of polysulfone, XYDAR™, POLYIMIDE, Polyimide-Siloxane Copolymers, MYLAR™ and epoxy.
Claim 10
Dependent Claim
14 words
The method of claim 1 in which said etching occurs in an oxygen atmosphere.
Claim 11
Dependent Claim
22 words
The method of claim 1 in which said etching occurs in an atmosphere comprising approximately 80% oxygen and 20% CF 4 .
Claim 12
Dependent Claim
17 words
The method of claim 1 in which said etching occurs at a pressure of approximately 0.5 torr.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-16 | 1992-02-15 | 1992-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-16 | 1996-02-15 | 1996-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-16 | 2000-02-15 | 2000-08-16 | $7700.00 | Window Closed / Lapsed |