US4761677A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having new conductive interconnection structure and method for manufacturing the same
Assignee: Fujitsu Ltd
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Filing: 1987-01-22
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Granted: 1988-08-02
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Expires: 2007-01-22
Abstract
Abstract A reliable multilevel interconnection structure is attained by using polyacetylene layers. Nondoped polyacetylene is dielectric but is conductive when it is doped with an impurity such as AsF 5 , which makes it possible to eliminate the necessity of opening a contact hole or through hole in an insulating layer in a process for manufacturing a multilevel interconnection structure so that a disconnection and/or short circuit does not occur due to the evenness of the layers even if the layer of numbers is increased.
Inventors
- 👤 Nobuo Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:39
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10K; H10K85/00; H10K85/10; H10K85/141; H10K85/143; H10W; H10W20/00; H10W20/01; H10W20/40; H10W20/41; H10W20/44; H10W20/4473
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
89 words
A semiconductor device comprising: a substrate; wiring layers formed on said substrate; a conductive region formed in said substrate; a first polyacetylene layer formed on said conductive region, said first polyacetylene layer exhibiting insulating properties and having a first doped region, said first doped region being conductive and being electrically connected to said conductive region; and a second polyacetylene layer formed directly on said first polyacetylene layer and including a second doped region electrically connected to said conductive region below said first polyacetylene layer through said first doped region.
Claim 2
Dependent Claim
89 words
A semiconductor device comprising: a substrate; wiring layers formed on said substrate; a conductive region formed in said substrate; a first polyacetylene layer formed on said conductive region, said first polyacetylene layer exhibiting insulating properties and having a first doped region, said first doped region being conductive and being electrically connected to said conductive region; and a second polyacetylene layer formed directly on said first polyacetylene layer and including a second doped region electrically connected to said conductive region below said first polyacetylene layer through said first doped region.
Claim 3
Dependent Claim
22 words
A semiconductor device according to claim 1, wherein said conductive region is a diffused region formed in a portion of said substrate.
Claim 4
Dependent Claim
38 words
A semiconductor device according to claim 1, further comprising a third polyacetylene layer formed under said first polyacetylene layer having a third doped region, wherein said conductive region is the third doped region of said third polyacetylene layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-02 | 1992-02-01 | 1992-08-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-02 | 1996-02-01 | 1996-08-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-02 | 2000-02-01 | 2000-08-02 | $7700.00 | Window Closed / Lapsed |