Method of precisely adjusting the frequency of a piezoelectric resonator

Claim 2

Method of precisely adjusting the frequency of a UHF piezoelectric resonator, said method including the steps of: (A) fabricating the resonator by means of art established techniques, (B) adjusting the frequency of the resonator with an accuracy that is equivalent to about ±1 atomic layer of quartz, (C) measring the frequency of the resonator at a known conditions of temperature, pressure and load capacitance, (D) depositing a monomolecular layer of a thermally stable, low stress, uniform insulating polyimide film on the active area of the resonator and outgassing the film thoroughly, (E) measuring the frequency of the resonator at the same conditions as in step (C), (F) calculating the difference between the frequencies measured in steps (C) and (E) as the size of the step change in frequency for the particular resonator design and insulating film, (G) deciding on the frequency adjustment tolerance desired and converting that frequency adjustment tolerance to an insulating film area tolerance, and (H) removing the appropriate fraction of the insulating film area.

Claim 3

Method according to claim 1 wherein the resonator is a thickness field resonator.

Claim 4

Method according to claim 1 wherein the resonator is a lateral field resonator.

Claim 5

Method according to claim 1 wherein the polyimide film is deposited by the Langmuir-Blodgett technique.

Claim 6

Method according to claim 1 wherein the appropriate fraction of the insulating film area is removed by UV/ozone treatment.

Claim 7

Method according to claim 1 wherein the appropriate fraction of the insulating film area is removed by rastering a short wavelength UV laser until the appropriate portion of the film is removed.

Claim 8

Method according to claim 1 wherein the appropriate fraction of the insulating film area is removed by rastering an electron beam until the appropriate portion of the film is removed.

Claim 9

Method according to claim 1 wherein the appropriate fraction of the insulating film area is removed by sputtering.

Claim 10

Method according to claim 1 wherein the appropriate fraction of the insulating film area is removed by ion bombardment.

Claim 11

Method according to claim 1 wherein the appropriate fraction of the insulating film area is removed by reactive ion etching.

Claim 12

Method of adjusting the frequency of a 100 MHz fundamental mode, AT-cut thickness field resonator to an accuracy of ±1 ppm, said method including steps of: (A) fabricating the 100 MHz fundamental mode, AT-cut thickness field resonator by means of art established techniques, (B) depositing aluminum electrodes and adjusting the electrode thickness so that the resonator frequency is as close as possible to and above 100 MHz when the resonator is in a vacuum and at its upper turnover temperature of about 71° C., (C) measuring the frequency of the resonator under conditions of a temperature of 71° C.±2° C., a pressure of below 10 -6 torr, and a load capacitance of 20 pf±0.5 pf, (D) depositing a monomolecular layer of polyimide film obtained by the Langmuir-Blodgett technique onto the active area of the resonator, (E) measuring the frequency of the resonator under the same set of conditions as in step (C), (F) calculating the difference between the frequencies measured in steps (C) and (E) as the size of the step change in frequency for the particular resonator design and polyimide film, (G) deciding on the frequency adjustment tolerance desired and converting that frequency adjustment to a polyimide film area tolerance, and (H) removing the appropriate fraction of the polyimide film area by means of irradiation with short wavelength ozone-generating ultraviolet light through a mask.

Claim 13

Method of adjusting the frequency of a 100 MHz fundamental mode, AT-cut thickness field resonator to an accuracy of ±1 ppm, said method including steps of: (A) fabricating the 100 MHz fundamental mode, AT-cut thickness field resonator by means of art established techniques, (B) depositing aluminum electrodes and adjusting the electrode thickness so that the resonator frequency is as close as possible to and above 100 MHz when the resonator is in a vacuum and at its upper turnover temperature of about 71° C., (C) measuring the frequency of the resonator under conditions of a temperature of 71° C.±2° C., a pressure of below 10 -6 torr, and a load capacitance of 20 pf±0.5 pf, (D) depositing a monomolecular layer of polyimide film obtained by the Langmuir-Blodgett technique onto the active area of the resonator, (E) measuring the frequency of the resonator under the same set of conditions as in step (C), (F) calculating the difference between the frequencies measured in steps (C) and (E) as the size of the step change in frequency for the particular resonator design and polyimide film, (G) deciding on the frequency adjustment tolerance desired and converting that frequency adjustment to a polyimide film area tolerance, and (H) removing the appropriate fraction of the polyimide film area by means of irradiation with short wavelength ozone-generating ultraviolet light through a mask.