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US4759951A
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Heat-treating Cd-containing photoelectric conversion film in the presence of a cadmium halide
Assignee: Sharp Corp
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Filing: 1986-09-23
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Granted: 1988-07-26
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Expires: 2006-09-23
Abstract
Abstract A process for producing a photoelectric conversion film comprising heat-treating a coating (A) of a photoconductive material composed chiefly of at least one of CdSe, CdS, CdTe, CdS x Se 1-x and CdS x Te 1-x wherein x is a real number of less than 1, opposite from a coating (B) in proximity thereto, the coating (B) being made of a material composed chiefly of CdS and a Cd halide.
Inventors
- 👤 Masataka Itoh
- 👤 Masaya Nagata
- 👤 Shuhei Tsuchimoto
- 👤 Atsushi Yoshinouchi
- 👤 Hiroshi Wada
- 👤 Katsushi Okibayashi
- 👤 Soji Ohhara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:36
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/125; H10F71/1253; H10F30/00; H10F30/10; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/543
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
124 words
A process for producing a photoelectric conversion film comprising: (a) heat treating a first photoconductive material with a non-sintered coating (A) consisting primarily of a compound selected from the group consisting of CdSe, CdS, CdTe, CdS x Se 1-x and CdS x Te 1-x , wherein x is less than 1, and a second photoconductive material with a non-sintered coating (B) consisting primarily of a compound selected from the group consisting of CdS and Cd halides, the first photoconductive material being opposite from the second photoconductive material, at a temperature of 430° C. to 550° C. in an oxygen-containing atmosphere; and (b) thereafter heat treating the first and second photoconductive materials at a temperature of 430° C. to 550° C. in an inert atmosphere.
Claim 2
Dependent Claim
124 words
A process for producing a photoelectric conversion film comprising: (a) heat treating a first photoconductive material with a non-sintered coating (A) consisting primarily of a compound selected from the group consisting of CdSe, CdS, CdTe, CdS x Se 1-x and CdS x Te 1-x , wherein x is less than 1, and a second photoconductive material with a non-sintered coating (B) consisting primarily of a compound selected from the group consisting of CdS and Cd halides, the first photoconductive material being opposite from the second photoconductive material, at a temperature of 430° C. to 550° C. in an oxygen-containing atmosphere; and (b) thereafter heat treating the first and second photoconductive materials at a temperature of 430° C. to 550° C. in an inert atmosphere.
Claim 3
Dependent Claim
26 words
A process as defined in claim 1 wherein the coating (A) is opposite from the coating (B) at a distance of 0.1 to 10 mm therefrom.
Claim 4
Dependent Claim
25 words
A process as defined in claim 1 wherein the coating (A) is opposite from the coating (B) at a distance of 0.4 to 0.8 mm.
Claim 5
Dependent Claim
27 words
A process as defined in claim 1 wherein the Cd halide is used in an amount of 1 to 10 mole % based on on the CdS.
Claim 6
Dependent Claim
25 words
A process as defined in claim 1 wherein the Cd halide is used in an amount of 3 to 8 mole % based the CdS.
Claim 7
Dependent Claim
29 words
A process as defined in claim 1 wherein the heat treatment of step (a) is conducted in an oxygen-containing atmosphere having an oxygen partial pressure of 1/4 to 1/20.
Claim 8
Dependent Claim
26 words
A process as defined in claim 1 wherein the heat treatment of step (b) is conducted in an inert gas atmosphere of N2, Ar or He.
Claim 9
Dependent Claim
17 words
A process as defined in claim 1 wherein the first photoconductive material is composed chiefly of CdSe.
Claim 10
Dependent Claim
15 words
A process as defined in claim 1 wherein the Cd halide is CdCl 2 .
Claim 11
Dependent Claim
43 words
A process as defined in claim 1, wherein the heat treatment of step (a) is conducted at a temperature of 430° C. to 500° C., and the heat treatment of step (b) is conducted at a temperature of 480° C. to 550° C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-26 | 1992-01-25 | 1992-07-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-26 | 1996-01-25 | 1996-07-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-26 | 2000-01-25 | 2000-07-26 | $7700.00 | Window Closed / Lapsed |