US4034127A
Expired / Lapsed
US
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Method of forming and treating cadmium selenide photoconductive bodies
Assignee: RCA Corp
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Filing: 1975-03-31
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Granted: 1977-07-05
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Expires: 1995-03-31
Abstract
Abstract A cadmium selenide base layer is vapor deposited on a substrate and thermally treated to achieve a desired photosensitivity, crystallographic structure, and granularity.
Inventors
- 👤 Charles John Busanovich
- 👤 Robert Milton Moore
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 11:37
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/125; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J29/456; H01J9/00; H01J9/20; H01J9/233; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/543
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
146 words
A method for fabricating a photoconductive body on a surface of a substrate including the steps of: (a) vapor depositing within an evacuated chamber an overlayer of cadmium selenide on the surface of the substrate while maintaining the substrate at a temperature of from about 200° C. to about 500° C.; then (b) thermally treating the substrate including the cadmium selenide overlayer at a temperature of from about 450° C. to about 550° C. within a continuously renewed atmosphere substantially of an inert gas selected from the group consisting of argon, helium, and nitrogen, or mixtures thereof, for a period of time of at least 2 hours; and, thereafter (c) thermally treating the substrate including the cadmium selenide overlayer in air at a temperature of from about 250° C. to about 450° C. for a period of time from about 15 minutes to about 2 hours.
Claim 2
Independent Claim
146 words
A method for fabricating a photoconductive body on a surface of a substrate including the steps of: (a) vapor depositing within an evacuated chamber an overlayer of cadmium selenide on the surface of the substrate while maintaining the substrate at a temperature of from about 200° C. to about 500° C.; then (b) thermally treating the substrate including the cadmium selenide overlayer at a temperature of from about 450° C. to about 550° C. within a continuously renewed atmosphere substantially of an inert gas selected from the group consisting of argon, helium, and nitrogen, or mixtures thereof, for a period of time of at least 2 hours; and, thereafter (c) thermally treating the substrate including the cadmium selenide overlayer in air at a temperature of from about 250° C. to about 450° C. for a period of time from about 15 minutes to about 2 hours.
Claim 3
Dependent Claim
26 words
The method of claim 1, wherein said vapor depositing step is accomplished in a vacuum chamber with a pressure less than about 10 - 5 torr.
Claim 4
Dependent Claim
25 words
The method of claim 1, wherein the temperature of said substrate while vapor depositing cadmium selenide is from about 225° C. to about 350° C.
Claim 5
Dependent Claim
39 words
The method of claim 1, wherein the atmosphere of step b is renewed at a rate of from about 1 to about 10 centimeters per minute in the atmosphere region proximate to the cadmium selenide overlayer on said substrate.
Claim 6
Dependent Claim
15 words
The method of claim 4, wherein the atmosphere of step b consists essentially of argon.
Claim 7
Dependent Claim
21 words
The method of claim 5, wherein the thermal treatment of step b is accomplished at a temperature of about 500° C.
Claim 8
Dependent Claim
22 words
The method of claim 6, wherein the thermal treatment of step b is for a period of time of approximately 16 hours.
Claim 9
Dependent Claim
20 words
The method of claim 1, wherein the thermal treatment of step c is at a temperature of about 400° C.
Claim 10
Dependent Claim
22 words
The method of claim 8, wherein the thermal treatment of step c is for a period of time of approximately 30 minutes.
Claim 11
Independent Claim
125 words
A method for fabricating a photoconductive body on a surface of a substrate including the steps of: (a) forming an overlayer of cadmium selenide on the surface of the substrate, then (b) thermally treating the substrate including the cadmium selenide overlayer at a temperature of from about 450° C. to about 550° C. within a continuously renewed atmosphere substantially of an inert gas selected from the gorup consisting of argon, helium, and nitrogen, or mixtures thereof, for a period of time of at least 2 hours; and, thereafter (c) thermally treating the substrate including the cadmium selenide overlayer in air at a temperature of from about 250° C. to about 450° C. for a period of time from about 15 minutes to about 2 hours.
Claim 12
Independent Claim
125 words
A method for fabricating a photoconductive body on a surface of a substrate including the steps of: (a) forming an overlayer of cadmium selenide on the surface of the substrate, then (b) thermally treating the substrate including the cadmium selenide overlayer at a temperature of from about 450° C. to about 550° C. within a continuously renewed atmosphere substantially of an inert gas selected from the gorup consisting of argon, helium, and nitrogen, or mixtures thereof, for a period of time of at least 2 hours; and, thereafter (c) thermally treating the substrate including the cadmium selenide overlayer in air at a temperature of from about 250° C. to about 450° C. for a period of time from about 15 minutes to about 2 hours.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-07-04 | 1981-01-03 | 1981-07-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-07-04 | 1985-01-03 | 1985-07-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-07-04 | 1989-01-03 | 1989-07-05 | $7700.00 | Window Closed / Lapsed |