Patent US4757029A successfully refreshed from Google Patents.
US4757029A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making vertical field effect transistor with plurality of gate input cnnections
Assignee: Semiconductor Components Industries LLC
•
Filing: 1987-05-04
•
Granted: 1988-07-12
•
Expires: 2007-05-04
Abstract
Abstract A method of making a vertical field effect transistor (FET) having a plurality of gates which are isolated from each other. Each gate has a contact thereby enabling a single gate which is turned "on" to cause the vertical FET to conduct a current. This configuration allows for a logical "or" function to be implemented in a vertical FET.
Inventors
- 👤 Daniel N. Koury, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 12:04
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/63; H10D30/01; H10D30/021; H10D30/025; H10D64/00; H10D64/01; H10D64/031; H10D64/035
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
129 words
A method for making a vertical field effect transistor (FET) which implements a logical "or" function comprising the steps of: providing a silicon wafer; forming a first dielectric layer on said silicon wafer; forming a polycrystalline silicon layer on said first dielectric layer; patterning said polycrystalline silicon layer to create a plurality of input gates; forming a second dielectric layer on said patterned polycrystalline silicon layer; forming an opening to said silicon wafer, said opening exposing an edge of each member of said plurality of input gates; forming a gate dielectric layer on each of said edges of each member of said plurality of input gates; and growing an epitaxial island seated on said silicon wafer in said opening, said island being doped to form a field effect transistor.
Claim 2
Independent Claim
129 words
A method for making a vertical field effect transistor (FET) which implements a logical "or" function comprising the steps of: providing a silicon wafer; forming a first dielectric layer on said silicon wafer; forming a polycrystalline silicon layer on said first dielectric layer; patterning said polycrystalline silicon layer to create a plurality of input gates; forming a second dielectric layer on said patterned polycrystalline silicon layer; forming an opening to said silicon wafer, said opening exposing an edge of each member of said plurality of input gates; forming a gate dielectric layer on each of said edges of each member of said plurality of input gates; and growing an epitaxial island seated on said silicon wafer in said opening, said island being doped to form a field effect transistor.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein the first, second and gate dielectric layers are comprised of oxide.
Claim 4
Dependent Claim
14 words
The method of claim 1 wherein the epitaxial island is doped during its growth.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein the epitaxial island is doped by ion implantation after its growth.
Claim 6
Dependent Claim
22 words
The method of claim 1 wherein the epitaxial island is doped both during its growth and after its growth by ion implantation.
Claim 7
Dependent Claim
43 words
The method of claim 5 further comprising the steps of etching holes and disposing contacts in said holes, said contacts extending into said polycrystalline silicon layer and at least one of said contacts extending into each member of the plurality of input gates.
Claim 8
Independent Claim
166 words
A method for making a vertical field effect transistor (FET) which implements a logical "or" function comprising the steps of: providing a silicon wafer; forming a first oxide dielectric layer on said silicon wafer; forming a polycrystalline silicon layer on said first oxide dielectric layer; patterning said polycrystalline silicon layer to create a plurality of input gates; forming a second oxide dielectric layer on said patterned polycrystalline silicon layer; forming an opening to said silicon wafer, said opening exposing an edge of each member of said plurality of input gates; forming a gate oxide dielectric layer on each of said edges of each member of said plurality of input gates; growing an epitaxial island seated on said silicon wafer in said opening, said island being doped to form a field effect transistor; and etching holes and disposing contacts in said holes, said contacts extending into said polycrystalline silicon layer and at least one of said contacts extending into each member of said plurality of input gates.
Claim 9
Independent Claim
166 words
A method for making a vertical field effect transistor (FET) which implements a logical "or" function comprising the steps of: providing a silicon wafer; forming a first oxide dielectric layer on said silicon wafer; forming a polycrystalline silicon layer on said first oxide dielectric layer; patterning said polycrystalline silicon layer to create a plurality of input gates; forming a second oxide dielectric layer on said patterned polycrystalline silicon layer; forming an opening to said silicon wafer, said opening exposing an edge of each member of said plurality of input gates; forming a gate oxide dielectric layer on each of said edges of each member of said plurality of input gates; growing an epitaxial island seated on said silicon wafer in said opening, said island being doped to form a field effect transistor; and etching holes and disposing contacts in said holes, said contacts extending into said polycrystalline silicon layer and at least one of said contacts extending into each member of said plurality of input gates.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-12 | 1992-01-11 | 1992-07-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-12 | 1996-01-11 | 1996-07-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-12 | 2000-01-11 | 2000-07-12 | $7700.00 | Window Closed / Lapsed |