US4755482A
Expired / Lapsed
US
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Making semiconductor device on insulating substrate by forming conductive layers on both major surfaces
Assignee: Toshiba Corp
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Filing: 1987-01-29
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Granted: 1988-07-05
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Expires: 2007-01-29
Abstract
Abstract A method is disclosed for the manufacture of a multilayered interconnect structure on an insulating substrate. First and second conductive layers are formed on one and on the other (reverse) surfaces, respectively, of the insulating substrate. An insulating layer is formed, by means of a plasma CVD method, on the surface of the insulating substrate, to electrical insulation between interconnect layers. This is followed by a reactive ion etching step. This results in the formation of the aforementioned layer of a uniform thickness and having a uniform etching rate. That is, with the conductive layer formed on the rear surface of the insulating substrate, the complete insulating substrate is placed at the same potential level, whereby a uniform electrochemical reaction occurs on the surface thereof, resulting in the formation of the layers having a uniform etching rate, and in the formation of these layers each having the same thickness.
Inventors
- 👤 Yoshihide Nagakubo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:31
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/01; H10W70/05; H10D; H10D86/00; H10D86/01; H10D86/03; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S148/00; Y10S148/15
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
95 words
A method for manufacturing a semiconductor device, comprising the steps of: (1) forming a first conductive layer on a first major surface of an insulating substrate; (2) forming a second conductive layer on a second major surface of the insulating substrate; (3) forming, subsequent to the formation of said second conductive layer, elements in said first conductive layer; and (4) forming an insulating interlayer, for insulation between interconnect layers, by means of a plasma CVD method, and forming contact holes, for achieving connection between the interconnect layers, by means of a reactive ion etching method.
Claim 2
Independent Claim
95 words
A method for manufacturing a semiconductor device, comprising the steps of: (1) forming a first conductive layer on a first major surface of an insulating substrate; (2) forming a second conductive layer on a second major surface of the insulating substrate; (3) forming, subsequent to the formation of said second conductive layer, elements in said first conductive layer; and (4) forming an insulating interlayer, for insulation between interconnect layers, by means of a plasma CVD method, and forming contact holes, for achieving connection between the interconnect layers, by means of a reactive ion etching method.
Claim 3
Dependent Claim
14 words
The method according to claim 1, wherein said insulation substrate is formed of sapphire.
Claim 4
Dependent Claim
22 words
The method according to claim 1, wherein said first and second conductive layers are formed by use of an epitaxial growth method.
Claim 5
Dependent Claim
20 words
The method according to claim 1, wherein said first and second conductive layers are formed of a single crystalline silicon.
Claim 6
Dependent Claim
17 words
The method according to claim 1, wherein said insulation interlayer is formed of an SiO 2 layer.
Claim 7
Dependent Claim
23 words
The method according to claim 1, further comprising the step of planarizing said insulation interlayer, by means of a reactive ion etching method.
Claim 8
Dependent Claim
34 words
The method according to claim 6, wherein said planarizing step comprises coating a resist, for planarization, on said insulation interlayer, and performing a reactive ion etching step on the surface of a resultant structure.
Claim 9
Independent Claim
130 words
A method for manufacturing a semiconductor device, comprising the steps of: (1) forming a first conductive layer on a first major surface of an insulating substrate; (2) forming a second conductive layer on said first conductive layer, with an insulating layer formed therebetween, and forming said second conductive layer on a second major surface of said insulating substrate; (3) forming a gate electrode by etching said second conductive layer formed on said first major surface of said insulating substrate by means of a reactive iron etching method; and (4) forming an insulation interlayer, by means of a plasma chemical vapor deposition method, on the gate electrode, to provide insulating between interconnect layers, and forming contact holes therebetween, through etching the insulation interlayer by means of a reactive ion etching method.
Claim 10
Independent Claim
130 words
A method for manufacturing a semiconductor device, comprising the steps of: (1) forming a first conductive layer on a first major surface of an insulating substrate; (2) forming a second conductive layer on said first conductive layer, with an insulating layer formed therebetween, and forming said second conductive layer on a second major surface of said insulating substrate; (3) forming a gate electrode by etching said second conductive layer formed on said first major surface of said insulating substrate by means of a reactive iron etching method; and (4) forming an insulation interlayer, by means of a plasma chemical vapor deposition method, on the gate electrode, to provide insulating between interconnect layers, and forming contact holes therebetween, through etching the insulation interlayer by means of a reactive ion etching method.
Claim 11
Dependent Claim
14 words
The method according to claim 8, wherein said insulating substrate is formed of sapphire.
Claim 12
Dependent Claim
20 words
The method according to claim 8, wherein said first conductive layer is formed by use of an epitaxial growth method.
Claim 13
Dependent Claim
18 words
The method according to claim 8, wherein said first conductive layer is formed of a single crystalline silicon.
Claim 14
Dependent Claim
22 words
The method according to claim 8, wherein said first conductive layer is formed by use of a low-pressure chemical vapor deposition method.
Claim 15
Dependent Claim
15 words
The method according to claim 8, wherein said second conductive layer is formed of polysilicon.
Claim 16
Dependent Claim
23 words
The method according to claim 8, further comprising the step of planarizing said insulation interlayer, by means of a reactive ion etching method.
Claim 17
Dependent Claim
27 words
The method according to claim 14, wherein said planarizing step comprises coating a resist, for planarization, on said insulation interlayer, and performing a reactive ion etching step.
Claim 18
Independent Claim
139 words
A method for manufacturing a semiconductor device, comprising the steps of: (1) forming a first conductive layer on a surface of an insulating substrate; (2) forming elements in said first conductive layer; (3) forming a gate electrode, and an insulation interlayer for insulation between interconnect layers, on the elements formed on said first conductive layer; (4) forming contact holes in the insulating layer, to thereby achieve an electrical connection between said interconnect layers; (5) forming an interconnect layer over the contact hole, and simultaneously or subsequently forming a second conductive layer on a reverse surface of said insulating substrate; and (6) forming an insulation interlayer, by means of a plasma chemical vapor deposition method, on the interconnect layer, and forming contact holes by means of a reactive ion etching method, to achieve an electrical connection between the interconnect layers.
Claim 19
Independent Claim
139 words
A method for manufacturing a semiconductor device, comprising the steps of: (1) forming a first conductive layer on a surface of an insulating substrate; (2) forming elements in said first conductive layer; (3) forming a gate electrode, and an insulation interlayer for insulation between interconnect layers, on the elements formed on said first conductive layer; (4) forming contact holes in the insulating layer, to thereby achieve an electrical connection between said interconnect layers; (5) forming an interconnect layer over the contact hole, and simultaneously or subsequently forming a second conductive layer on a reverse surface of said insulating substrate; and (6) forming an insulation interlayer, by means of a plasma chemical vapor deposition method, on the interconnect layer, and forming contact holes by means of a reactive ion etching method, to achieve an electrical connection between the interconnect layers.
Claim 20
Dependent Claim
14 words
The method according to claim 16, wherein said insulation substrate is formed of sapphire.
Claim 21
Dependent Claim
20 words
The method according to claim 16, wherein said first conductive layer is formed by means of an epitaxial growth method.
Claim 22
Dependent Claim
18 words
The method according to claim 16, wherein said first conductive layer is formed of a single crystalline silicon.
Claim 23
Dependent Claim
15 words
The method according to claim 16, wherein said second conductive layer is formed of aluminum.
Claim 24
Dependent Claim
19 words
The method according to claim 16, further comprising planarizing said insulation interlayer, through utilizing a reactive ion etching method.
Claim 25
Dependent Claim
27 words
The method according to claim 21, wherein said planarizing step is performed by coating a resist over the insulation interlayer, and performing said reactive ion etching method.
References Cited (Backward Citations)
JPS5263673A
Cited
US4564997A
Cited
US4428111A
Cited
US4598461A
Cited
US4644637A
Cited
DE3443793A1
Cited
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