JPS5263673A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1975-11-20
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Granted: —
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Expires: 1995-11-20
Abstract
Abstract PURPOSE: To produce an electrode material of low resistance by forming a polysilicon film on a substrate, then annealing the substrate at a temperature higher than the growth temperature. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Hitoshi Hasegawa
- 👤 Kunihiko Wada
- 👤 Takashi Matsumoto
- 👤 Shigeru Yamaoka
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-31 13:00
CPC Classifications
—
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