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Patent US4752501A successfully refreshed from Google Patents.
US4752501A
Expired / Lapsed
US
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Method for forming patterned tin oxide thin film element
Assignee: Motors Liquidation Co
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Filing: 1987-07-01
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Granted: 1988-06-21
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Expires: 2007-07-01
Abstract
Abstract A method is disclosed for forming a semiconductor tin oxide thin film on a selected region of a surface without forming the film on an adjacent region. An ink film composed of tin(II) carboxylate compound is applied to the surface and heated to partially decompose the compound. A positive photoresist layer is preferably applied to the partially decomposed layer and selectively irradiated to define a mask overlying the selected region. Unwanted photoresist material is dissolved from the adjacent region using an aqueous alkaline solution. It is found that the solution concurrently dissolves the underlying partially decomposed tin compound, without dissolving the compound protected by the mask. Thereafter, the mask is stripped, and the underlying tin compound is heated and further decomposed to produce the desired tin oxide thin film.
Inventors
- 👤 David B. Hicks
- 👤 Adolph L. Micheli
- 👤 Shih-Chia Chang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:02
CPC Classifications
G; G01; G01N; G01N27/00; G01N27/02; G01N27/04; G01N27/12
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
227 words
A method for forming a semiconductor tin oxide thin film on a selected region of a surface without forming the film on an adjacent region and such that the film is formed in a desired pattern, said method comprising applying uniformly onto both the selected region and the adjacent region an ink film comprising a thermally decomposable tin(II) carboxylate compound, heating the ink film for a time and at a temperature sufficient to partially decompose the tin carboxylate compound to form a film having reduced solubility in aqueous alkaline solution, coating said partially decomposed film with a photoresist layer such that the selected region carries a photoresist mask insoluble in aqueous alkaline solution, removing the photoresist material from the adjacent region, thereby exposing the underlying partially decomposed tin compound, said partially decomposed compound being protected in the selected region by said mask, dissolving the exposed partially decomposed tin compound using aqueous alkaline solution, whereupon the photoresist mask protects the partially decomposed tin compound in the selected region from dissolution, removing the photoresist material from the selected region to expose the partially decomposed tin compound, and heating the partially decomposed tin compound for a time and at a temperature sufficient to further decompose the compound to produce a semiconductor tin oxide thin film, whereupon the film is formed on the selected region but not on the adjacent region.
Claim 2
Independent Claim
227 words
A method for forming a semiconductor tin oxide thin film on a selected region of a surface without forming the film on an adjacent region and such that the film is formed in a desired pattern, said method comprising applying uniformly onto both the selected region and the adjacent region an ink film comprising a thermally decomposable tin(II) carboxylate compound, heating the ink film for a time and at a temperature sufficient to partially decompose the tin carboxylate compound to form a film having reduced solubility in aqueous alkaline solution, coating said partially decomposed film with a photoresist layer such that the selected region carries a photoresist mask insoluble in aqueous alkaline solution, removing the photoresist material from the adjacent region, thereby exposing the underlying partially decomposed tin compound, said partially decomposed compound being protected in the selected region by said mask, dissolving the exposed partially decomposed tin compound using aqueous alkaline solution, whereupon the photoresist mask protects the partially decomposed tin compound in the selected region from dissolution, removing the photoresist material from the selected region to expose the partially decomposed tin compound, and heating the partially decomposed tin compound for a time and at a temperature sufficient to further decompose the compound to produce a semiconductor tin oxide thin film, whereupon the film is formed on the selected region but not on the adjacent region.
Claim 3
Independent Claim
240 words
A method for forming a semiconductor tin oxide thin film on a selected region of a surface without forming the film on an adjacent region and such that the film is formed in a desired pattern, said method comprising applying uniformly onto both the selected region and the adjacent region an ink film comprising a thermally decomposable tin(II) carboxylate compound, heating the ink film in air for a time and at a temperature sufficient to partially decompose the tin compound to form a film having reduced solubility in aqueous alkaline solution, applying a photoresist layer that is essentially insoluble in aqueous alkaline solution onto the partially decomposed tin compound, selectively irradiating the photoresist layer overlying the adjacent region to produce a material that is soluble in aqueous alkaline solvent, whereupon the non-irradiated alkaline-insoluble photoresist material overlying the selected region forms a mask, exposing the surface bearing the irradiated photoresist layer to aqueous alkaline solvent to remove said soluble photoresist material from the adjacent region and to dissolve the underlying partially decomposed tin compound, whereupon the photoresist mask overlying the selected region protects the underlying compound from dissolution, removing the photoresist mask to expose the underlying tin compound, and heating the partially decomposed tin compound for a time and at a temperature sufficient to further decompose the compound to produce a semiconductor tin oxide thin film, whereupon the film is formed on the selected region but not on the adjacent region.
Claim 4
Independent Claim
240 words
A method for forming a semiconductor tin oxide thin film on a selected region of a surface without forming the film on an adjacent region and such that the film is formed in a desired pattern, said method comprising applying uniformly onto both the selected region and the adjacent region an ink film comprising a thermally decomposable tin(II) carboxylate compound, heating the ink film in air for a time and at a temperature sufficient to partially decompose the tin compound to form a film having reduced solubility in aqueous alkaline solution, applying a photoresist layer that is essentially insoluble in aqueous alkaline solution onto the partially decomposed tin compound, selectively irradiating the photoresist layer overlying the adjacent region to produce a material that is soluble in aqueous alkaline solvent, whereupon the non-irradiated alkaline-insoluble photoresist material overlying the selected region forms a mask, exposing the surface bearing the irradiated photoresist layer to aqueous alkaline solvent to remove said soluble photoresist material from the adjacent region and to dissolve the underlying partially decomposed tin compound, whereupon the photoresist mask overlying the selected region protects the underlying compound from dissolution, removing the photoresist mask to expose the underlying tin compound, and heating the partially decomposed tin compound for a time and at a temperature sufficient to further decompose the compound to produce a semiconductor tin oxide thin film, whereupon the film is formed on the selected region but not on the adjacent region.
Claim 5
Dependent Claim
39 words
A method according to claim 2 wherein the ink film is composed mainly of tin(II) 2-ethylhexanoate and is partially decomposed by heating at a temperature between 110° C. and 130° C. for a time between 20 and 30 minutes.
Claim 6
Dependent Claim
40 words
A method according to claim 2 wherein the tin(II) carboxylate compound consists substantially of tin(II) neodecanoate and is partially decomposed by heating at a temperature between about 240° C. and 245° C. for a time between 25 and 30 minutes.
References Cited (Backward Citations)
US4370028A
Cited
US4706493A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-06-21 | 1991-12-21 | 1992-06-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-06-21 | 1995-12-21 | 1996-06-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-06-21 | 1999-12-21 | 2000-06-21 | $7700.00 | Window Closed / Lapsed |