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US4750158A
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Integrated matrix of nonvolatile, reprogrammable storage cells
Assignee: ITT Inc
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Filing: 1983-01-28
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Granted: 1988-06-07
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Expires: 2003-01-28
Abstract
Abstract In an integrated matrix of nonvolatile, reprogrammable storage cells, additional memory is provided to replace defective rows of storage cells. The addresses of the defective rows are stored in a region of the matrix. A correction register can be loaded with the addresses of the defective rows from the region of the matrix when power is first applied to the matrix or whenever the applied power deviates from the expected, nominal value.
Inventors
- 👤 Burkhard Giebel
- 👤 Thomas Fischer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 03:07
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/70; G11C29/76; G11C29/78; G11C29/785; G11C29/789; G11C29/80; G11C29/816; G11C29/822
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
113 words
In a system including a matrix of nonvolatile, reprogrammable storage cells with an address input, a plurality of redundant storage cells usable to replace defective storage cells in the matrix, and a volatile correction register for storing the addresses of the defective locations in the matrix, an improvement wherein: said matrix includes means for storing a plurality of addresses corresponding to defective storage locations in said matrix; means for coupling addresses of defective storage locations read out from said means for storing to inputs to said correction register; and means for control coupled between said address input and said correction register for controlling said correction register to accept said defective storage location inputs.
Claim 2
Dependent Claim
113 words
In a system including a matrix of nonvolatile, reprogrammable storage cells with an address input, a plurality of redundant storage cells usable to replace defective storage cells in the matrix, and a volatile correction register for storing the addresses of the defective locations in the matrix, an improvement wherein: said matrix includes means for storing a plurality of addresses corresponding to defective storage locations in said matrix; means for coupling addresses of defective storage locations read out from said means for storing to inputs to said correction register; and means for control coupled between said address input and said correction register for controlling said correction register to accept said defective storage location inputs.
Claim 3
Dependent Claim
28 words
A system as defined in claim 1 including: means, coupled to said correction register, for addressing said plurality of redundant storage cells with said correction register supplying addresses.
Claim 4
Dependent Claim
40 words
A system as defined in claim 2 wherein said matrix includes a storage region comprising said plurality of redundant storage cells and wherein said means for addressing said plurality of redundant storage cells includes additional means for addressing said matrix.
Claim 5
Dependent Claim
30 words
A system as defined in claim 1 including: means for reading the contents of said means for storing a plurality of addresses in response to a selected condition having occurred.
References Cited (Backward Citations)
US4047163A
Cited
US4428068A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-06-07 | 1991-12-07 | 1992-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-06-07 | 1995-12-07 | 1996-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-06-07 | 1999-12-07 | 2000-06-07 | $7700.00 | Window Closed / Lapsed |