Patent US4748052A successfully refreshed from Google Patents.
US4748052A
Expired / Lapsed
US
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Fluid bed reactor and process
Assignee: Albemarle Corp
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Filing: 1987-08-21
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Granted: 1988-05-31
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Expires: 2007-08-21
Abstract
Abstract Undesirable conversion of a silicon source, such as silane, in the freeboard above a fluidized bed of silicon particles in a fluidized bed reactor, can be reduced by cooling the gas within the freeboard. Preferably, the reduction in temperature is achieved by introducing into the freeboard, a stream of relatively cool quench gas such as hydrogen, which also reduces the concentration of silane in the freeboard. As a result of these two factors, the invention improves the service factor of the fluidized bed apparatus, and reduces the amount of silane conversion to undesired by-products.
Inventors
- 👤 Robert H. Allen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 09:46
CPC Classifications
C; C01; C01B; C01B33/00; C01B33/02; C01B33/021; C01B33/027; C01B33/029; B; B01; B01J; B01J8/00; B01J8/18; B01J8/1836; B01J2208/00; B01J2208/00008; B01J2208/00017; B01J2208/00026; B01J2208/00035; B01J2208/00088; B01J2208/00327; B01J2208/00336; B01J2208/00353; B01J2208/00371; B01J2208/00389; B01J2208/00407; Y; Y10; Y10S; Y10S118/00; Y10S118/05
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
127 words
A method for reducing the amount of undesirable conversion of silane or other gaseous or vaporous silicon source in the freeboard above a fluidized bed of silicon particles utilized in a fluidized bed process for producing polysilicon, in which said silicon source is thermally decomposed to deposit silicon metal on said silicon particles in said fluidized bed, said method comprising introducing, into the freeboard above said fluidized bed in a fluidized bed reactor, quench gas at a temperature below the decomposition temperature of said silicon source, the amount of said quench gas being sufficient to significantly reduce both the temperature of gas and the concentration of said silicon source in said freeboard, and thereby reduce the amount of thermal decomposition of said silicon source in said freeboard.
Claim 2
Independent Claim
127 words
A method for reducing the amount of undesirable conversion of silane or other gaseous or vaporous silicon source in the freeboard above a fluidized bed of silicon particles utilized in a fluidized bed process for producing polysilicon, in which said silicon source is thermally decomposed to deposit silicon metal on said silicon particles in said fluidized bed, said method comprising introducing, into the freeboard above said fluidized bed in a fluidized bed reactor, quench gas at a temperature below the decomposition temperature of said silicon source, the amount of said quench gas being sufficient to significantly reduce both the temperature of gas and the concentration of said silicon source in said freeboard, and thereby reduce the amount of thermal decomposition of said silicon source in said freeboard.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein said silicon source is silane.
Claim 4
Dependent Claim
24 words
A method of claim 2 wherein said quench gas is selected from the class consisting of hydrogen, helium, argon and neon and mixtures thereof.
Claim 5
Dependent Claim
11 words
A method of claim 3 wherein said quench gas is hydrogen.
Claim 6
Dependent Claim
30 words
A method of claim 3 wherein said hydrogen quench gas introduced into said freeboard is at a temperature within the range of from about 20° C. to about 200° C.
Claim 7
Dependent Claim
38 words
A method of claim 1 wherein said quench gas is at ambient temperature and the amount of quench gas introduced into said freeboard is sufficient to reduce the temperature of gas in said freeboard to about 400° C.
Claim 8
Dependent Claim
194 words
A fluidized bed apparatus for preparing polysilicon comprising a bed of silicon particles enclosed within a reactor having a bed zone and a freeboard above said bed zone; means for heating said bed zone to a temperature above the decomposition temperature of a gaseous or vaporous silicon source in a deposition gas; gas inlet means for introducing a motive stream of said deposition gas comprising a silicon source, and optionally a carrier gas into said reactor; distribution means beneath said particle bed having a multiple number of conduits permitting the flow of said deposition gas therethrough, and into said bed of particles with sufficient motive force to maintain said particles in fluidized suspension within said reactor bed zone; gas outlet means near the upper limit of said reactor freeboard for removing gas exiting the reactor; and quench gas introducing means for introducing a flow of relatively cool quench gas into said freeboard above the upper boundary of said bed zone, said flow of quench gas being sufficient to reduce the temperature and concentration of said silicon source in said freeboard, and thereby reduce the amount of conversion of said silicon source in said freeboard.
Claim 9
Dependent Claim
194 words
A fluidized bed apparatus for preparing polysilicon comprising a bed of silicon particles enclosed within a reactor having a bed zone and a freeboard above said bed zone; means for heating said bed zone to a temperature above the decomposition temperature of a gaseous or vaporous silicon source in a deposition gas; gas inlet means for introducing a motive stream of said deposition gas comprising a silicon source, and optionally a carrier gas into said reactor; distribution means beneath said particle bed having a multiple number of conduits permitting the flow of said deposition gas therethrough, and into said bed of particles with sufficient motive force to maintain said particles in fluidized suspension within said reactor bed zone; gas outlet means near the upper limit of said reactor freeboard for removing gas exiting the reactor; and quench gas introducing means for introducing a flow of relatively cool quench gas into said freeboard above the upper boundary of said bed zone, said flow of quench gas being sufficient to reduce the temperature and concentration of said silicon source in said freeboard, and thereby reduce the amount of conversion of said silicon source in said freeboard.
References Cited (Backward Citations)
US3963838A
Cited
US4154870A
Cited
US4207360A
Cited
US4292344A
Cited
US4416913A
Cited
US4642228A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-31 | 1991-11-30 | 1992-05-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-31 | 1995-11-30 | 1996-05-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-31 | 1999-11-30 | 2000-05-31 | $7700.00 | Window Closed / Lapsed |