Patent US4745449A successfully refreshed from Google Patents.
US4745449A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated electronics suitable for optical communications
Assignee: Nokia Bell Labs
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Filing: 1987-08-07
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Granted: 1988-05-17
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Expires: 2007-08-07
Abstract
Abstract High gain MESFETs, integratable with a photodetector for optical communications, result from a specific gate structure. In particular, a dielectric region, such as an undoped indium aluminum arsenide region overlaid by a thin aluminum oxide region, is employed. This gate combination with, for example, an n-type indium gallium arsenide active channel yields transconductances as high as 130 mS/mm.
Inventors
- 👤 Tao-Yuasn Chang
- 👤 Richard E. Howard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:17
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D30/00; H10D30/80; H10D30/801; H10D64/602; H10D64/691; H10F; H10F39/00; H10F39/10; H10F39/103; H10F71/00; H10F71/127; H10F71/1272; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
97 words
A body comprising an active device and a substrate providing physical integrity to said device, wherein said active device comprises (1) an active channel providing electrical continuity between a source and drain, and (2) a gate structure which, upon application of a potential, is capable of substantially decreasing electrical current in said channel characterized in that said gate structure comprises (1) a first dielectric region comprising a low conductivity semiconductor material overlying and having a bandgap greater than said active channel, and (2) a second dielectric region comprising an aluminum oxide material overlying said first dielectric region.
Claim 2
Dependent Claim
97 words
A body comprising an active device and a substrate providing physical integrity to said device, wherein said active device comprises (1) an active channel providing electrical continuity between a source and drain, and (2) a gate structure which, upon application of a potential, is capable of substantially decreasing electrical current in said channel characterized in that said gate structure comprises (1) a first dielectric region comprising a low conductivity semiconductor material overlying and having a bandgap greater than said active channel, and (2) a second dielectric region comprising an aluminum oxide material overlying said first dielectric region.
Claim 3
Dependent Claim
15 words
The body of claim 1 wherein said active channel comprises a III-V based semiconductor material.
Claim 4
Dependent Claim
14 words
The body of claim 2 wherein said substrate comprises a III-V based semiconductor material.
Claim 5
Dependent Claim
13 words
The body of claim 2 wherein said active channel comprises indium gallium arsenide.
Claim 6
Dependent Claim
15 words
The body of claim 4 including a photodetector that electrically communicates with said active device.
Claim 7
Dependent Claim
12 words
The body of claim 5 wherein said photodetector is a p-i-n photodetector.
Claim 8
Dependent Claim
13 words
The body of claim 6 wherein said photodetector comprises a III-V semiconductor material.
Claim 9
Dependent Claim
8 words
The body of claim 2 including a photodetector.
Claim 10
Dependent Claim
14 words
The body of claim 8 wherein said photodetector comprises a III-V based p-i-n photodetector.
Claim 11
Dependent Claim
8 words
The body of claim 1 including a photodetector.
Claim 12
Dependent Claim
12 words
The body of claim 10 wherein said photodetector comprises a p-i-n photodetector.
Claim 13
Dependent Claim
14 words
The body of claim 11 wherein said photodetector comprises a III-V based semiconductor material.
Claim 14
Dependent Claim
13 words
The body of claim 1 wherein said active channel comprises indium gallium arsenide.
Claim 15
Dependent Claim
15 words
The body of claim 13 including an electrically conductive region overlying said second dielectric region.
Claim 16
Dependent Claim
22 words
The body of claim 14 wherein said electrically conductive region comprises a material chosen from the group consisting of aluminum and tungsten.
Claim 17
Dependent Claim
15 words
The body of claim 1 including an electrically conductive region overlying said second dielectric region.
Claim 18
Dependent Claim
22 words
The body of claim 16 wherein said electrically conductive region comprises a material chosen from the group consisting of aluminum and tungsten.
Claim 19
Dependent Claim
14 words
The body of claim 1 wherein said first dielectric material comprises indium aluminum arsenide.
Claim 20
Dependent Claim
13 words
The body of claim 18 wherein said active channel comprises indium gallium arsenide.
References Cited (Backward Citations)
US4042945A
Cited
US4442445A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-17 | 1991-11-16 | 1992-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-17 | 1995-11-16 | 1996-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-17 | 1999-11-16 | 2000-05-17 | $7700.00 | Window Closed / Lapsed |