Flow sensor on insulator

Claim 2

A flow sensor comprising: a thermally insulating substrate; a temperature sensing element disposed on said substrate; and a thin film heating element disposed on said temperature sensing element and being in close thermal contact with and electrically isolated from said temperature sensing element; wherein said temperature sensing element includes a pn junction having a p-doped region and a n-doped region positioned laterally on said substrate and a junction between the p-doped and the n-doped regions; and wherein said heating element is positioned over said junction.

Claim 3

The flow sensor of claim 1 wherein a thin film dielectric layer is interposed between said heating element and said temperature sensing element.

Claim 4

The flow sensor of claim 1 wherein said substrate is formed of quartz.

Claim 5

The flow sensor of claim 1 wherien said temperature sensing element is formed of a material selected from the group consisting of polycrystalline silicon, amorphous silicon, single crystal silicon, and laser-recrystallized polycrystalline silicon.

Claim 6

The flow sensor of claim 2 wherein said heating element is centered over said temperature sensing element.

Claim 7

The flow sensor of claim 2 wherein said insulating substrate comprises a thin film insulating member suspended across a depression in a substrate body.

Claim 8

The flow sensor of claim 2 wherein said heating element is formed of a material selected from the group consisting of silicon, tantalum nitride, nickel-chrome, and refractory metal silicides.

Claim 9

The flow sensor of claim 2 wherein said dielectric layer is formed of a material selected from the group consisting of silicon nitride and silicon dioxide.

Claim 10

A flow sensor comprising: a thermally insulating substrate; a plurality of temperature sensing elements disposed on said substrate and being spaced apart from one another; and a thin film heating element disposed on said temperature sensing elements and being in close thermal contact with and electrically isolated from each of said temperature sensing elements; wherein each of said temperature sensing elements includes a pn junction having a p-doped region and a n-doped region positioned laterally on the substrate and a junction between said p-doped and said n-doped regions; and wherein said heating element is positioned over said junction.

Claim 11

A flow sensor comprising: a thermally insulating substrate; a plurality of temperature sensing elements disposed on said substrate and being spaced apart from one another; and a thin film heating element disposed on said temperature sensing elements and being in close thermal contact with and electrically isolated from each of said temperature sensing elements; wherein each of said temperature sensing elements includes a pn junction having a p-doped region and a n-doped region positioned laterally on the substrate and a junction between said p-doped and said n-doped regions; and wherein said heating element is positioned over said junction.

Claim 12

The flow sensor of claim 9 wherein a thin film dielectric layer is interposed between said heating element and each of said temperature sensing elements to provide electric isolation therebetween.

Claim 13

The flow sensor of claim 10 wherein said substrate is formed of quartz.

Claim 14

The flow sensor of claim 10 wherein each of said temperature sensing elements is formed of a material selected from the group consisting of polycrystalline silicon, amorphous silicon, laser-recrystallized polycrystalline silicon and single crystal silicon.

Claim 15

The flow sensor of claim 10 wherein said heating element is centered over each of said temperature sensing elements.

Claim 16

The flow sensor of claim 10 wherein said insulating substrate comprises a thin film insulating member suspended across a depression in a substrate body.

Claim 17

The flow sensor of claim 10 wherein said heating element is selected from the group consisting of silicon, tantalum nitride, nickel-chrome, and refractory metal silicides.

Claim 18

The flow sensor of claim 10 wherein said dielectric layer is formed of a material selected from the group consisting of silicon nitride and silicon dioxide.

Claim 19

A flow sensor comprising: a thermally insulating substrate; an upstream sensor disposed on said substrate; wherein said upstream sensor comprises a plurality of upstream temperature sensing elements spaced apart from one another; and an upstream thin film heating element disposed on said upstream temperature sensing elements and being in close thermal contact with an electrically isolated from each of said upstream temperature sensing elements; and a downstream sensor disposed on said substrate and spaced apart from said upstream sensor; wherein said downstream sensor comprises a plurality of downstream temperature sensing elements spaced apart from one another; and a downstream thin film heating element disposed on said downstream temperature sensing elements and being in close thermal contact with and electrically isolated from each of said downstream sensing elements; wherein each of said upstream and said downstream sensing elements includes a pn junction having a p-doped region and a n-doped region positioned laterally on said substrate and a junction between said p-doped and said n-doped regions; and wherein each of said heating elements is positioned over its respective temperature sensing elements.

Claim 20

A flow sensor comprising: a thermally insulating substrate; an upstream sensor disposed on said substrate; wherein said upstream sensor comprises a plurality of upstream temperature sensing elements spaced apart from one another; and an upstream thin film heating element disposed on said upstream temperature sensing elements and being in close thermal contact with an electrically isolated from each of said upstream temperature sensing elements; and a downstream sensor disposed on said substrate and spaced apart from said upstream sensor; wherein said downstream sensor comprises a plurality of downstream temperature sensing elements spaced apart from one another; and a downstream thin film heating element disposed on said downstream temperature sensing elements and being in close thermal contact with and electrically isolated from each of said downstream sensing elements; wherein each of said upstream and said downstream sensing elements includes a pn junction having a p-doped region and a n-doped region positioned laterally on said substrate and a junction between said p-doped and said n-doped regions; and wherein each of said heating elements is positioned over its respective temperature sensing elements.

Claim 21

The flow sensor of claim 17 wherein a thin film dielectric layer is interposed between each of said heating elements and said respective temperature sensing elements to provide electric isolation therebetween.

Claim 22

The flow sensor of claim 18 wherein said substrate is formed of quartz.

Claim 23

The flow sensor of claim 19 wherein each of said temperature sensing elements is formed of a material selected from the group consisting of polycrystalline silicon, amorphous silicon, laser-recrystallized polycrystalline silicon and single crystal silicon.

Claim 24

The flow sensor of claim 20 wherein each of said dielectric layers is formed of a material selected from the group consisting of silicon nitride and silicon dioxide.

Claim 25

The flow sensor of claim 21 wherein each of said heating elements is selected from the group consisting of silicon, tantalum nitride, nickel chrome, and refractory metal silicides.

Claim 26

The flow sensor of claim 18 wherein said insulating substrate comprises a thin film insulating member suspended across a depression in a substrate body.