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US4740829A
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US
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Semiconductor device having a thin layer comprising germanium atoms as a matrix with a restricted range of hydrogen atom concentration
Assignee: Canon Inc
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Filing: 1986-12-03
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Granted: 1988-04-26
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Expires: 2006-12-03
Abstract
Abstract A semiconductor device comprises a polycrystalline semiconductor thin film layer comprising germanium atoms as a matrix and containing 3 atomic % or less of hydrogen atoms.
Inventors
- 👤 Takashi Nakagiri
- 👤 Yutaka Hirai
- 👤 Yoshiyuki Osada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:58
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D62/80; H10D62/83; H10D62/832; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/282; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/164; H10F77/1642; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/546
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
27 words
A semiconductor device which includes a polycrystalline semiconductor thin film layer comprising germanium atoms as a matrix and containing 0.01 to 3 atomic % of hydrogen atoms.
Claim 2
Dependent Claim
27 words
A semiconductor device which includes a polycrystalline semiconductor thin film layer comprising germanium atoms as a matrix and containing 0.01 to 3 atomic % of hydrogen atoms.
Claim 3
Dependent Claim
20 words
A semiconductor device according to claim 1, wherein silicon atoms are further contained in the polycrystalline semiconductor thin film layer.
Claim 4
Dependent Claim
24 words
A semiconductor device according to claim 2, wherein the silicon and germanium atoms in the layer satisfy the relation Ge x Si 1-x .
Claim 5
Dependent Claim
15 words
A semiconductor device according to claim 3, wherein x is between about 0.01 and 1.
Claim 6
Dependent Claim
14 words
A semiconductor device according to claim 4, wherein x is no less than 0.1.
Claim 7
Dependent Claim
91 words
A thin film transistor comprising: a substrate; a polycrystalline semiconductor layer provided on said substrate comprising germanium atoms as a matrix and containing 0.01 to 3 atomic % of hydrogen atoms; a source region and a drain region provided internally of said semiconductor layer; an insulating layer provided at least on the semiconductor layer at the portion between these two regions; and a gate electrode provided on said insulating layer, a source electrode in electrical contact with the source region and a drain electrod in electrical contact with the drain region.
Claim 8
Dependent Claim
91 words
A thin film transistor comprising: a substrate; a polycrystalline semiconductor layer provided on said substrate comprising germanium atoms as a matrix and containing 0.01 to 3 atomic % of hydrogen atoms; a source region and a drain region provided internally of said semiconductor layer; an insulating layer provided at least on the semiconductor layer at the portion between these two regions; and a gate electrode provided on said insulating layer, a source electrode in electrical contact with the source region and a drain electrod in electrical contact with the drain region.
Claim 9
Dependent Claim
18 words
A thin film transistor according to claim 6, wherein silicon atoms are further contained in the semiconductor layer.
Claim 10
Dependent Claim
15 words
A thin film transistor according to claim 6, wherein the substrate is a heat-resistant plastic.
Claim 11
Dependent Claim
16 words
A thin film transistor according to claim 6, wherein the substrate is a low melting glass.
Claim 12
Dependent Claim
14 words
A thin film transistor according to claim 6, wherein the substrate is a ceramic.
Claim 13
Dependent Claim
15 words
A thin film transistor according to claim 6, wherein the substrate is a hard glass.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-04-26 | 1991-10-26 | 1992-04-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-04-26 | 1995-10-26 | 1996-04-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-04-26 | 1999-10-26 | 2000-04-26 | $7700.00 | Window Closed / Lapsed |