Patent US4739383A successfully refreshed from Google Patents.
US4739383A
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Optical detector and amplifier based on tandem semiconductor devices
Assignee: ExxonMobil Technology and Engineering Co
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Filing: 1986-10-09
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Granted: 1988-04-19
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Expires: 2006-10-09
Abstract
Abstract If a semiconductor device is prepared so that it contains a photoconductive region in electrical series with a photovoltaic region, (i.e., a Schottky barrier or p-n junction) it can function as an optical amplifier and detector. When weak ac light plus an intense dc light are focused on this sample in an appropriate manner, the detected ac electric current will correspond to the intensity of the dc light but have the phase of the ac light; thus a weak ac light signal is effectively amplified, or a dc light signal is converted into an ac electrical signal capable of synchronous detection.
Inventors
- 👤 Paul H. Maruska
- 👤 Michael C. Hicks
- 👤 Theodore D. Moustakas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 22:31
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F10/00; H10F10/10; H10F10/16; H10F10/169; H10F30/10; H10F30/15; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
122 words
A semiconductor device comprising: (a) a photodiode (a region having a photovoltaic junction) region wherein first light of constant magnitude is absorbed; (b) a photoconductive region electrically connected in series to said junction region, said photoconductive region having a conductivity modulated by absorbed second light having a magnitude which changes with time, and both of said regions having electron affinities so as to not form a barrier to the passage of charge when they are illuminated by said light such that the electrical output from said semiconductor device has a magnitude determined by said constant magnitude and is in phase with said change in magnitude of said second light; and (c) electrical contacts connected to said photodiode region and said photoconductive region.
Claim 2
Dependent Claim
122 words
A semiconductor device comprising: (a) a photodiode (a region having a photovoltaic junction) region wherein first light of constant magnitude is absorbed; (b) a photoconductive region electrically connected in series to said junction region, said photoconductive region having a conductivity modulated by absorbed second light having a magnitude which changes with time, and both of said regions having electron affinities so as to not form a barrier to the passage of charge when they are illuminated by said light such that the electrical output from said semiconductor device has a magnitude determined by said constant magnitude and is in phase with said change in magnitude of said second light; and (c) electrical contacts connected to said photodiode region and said photoconductive region.
Claim 3
Dependent Claim
26 words
The semiconductor device of claim 1 wherein said photodiode and said photoconductive region are formed sequentially in tandem so as to be adjacent to each other.
Claim 4
Dependent Claim
20 words
The semiconductor device of claim 1 wherein said photodiode and said photoconductive region are connected by an electrically conductive medium.
Claim 5
Dependent Claim
18 words
The semiconductor device of claim 2 wherein said photodiode and said photoconductive region include a common semiconductor material.
Claim 6
Dependent Claim
18 words
The semiconductor device of claim 4 wherein said photodiode and said photoconductive region include an amorphous semiconductor material.
Claim 7
Dependent Claim
26 words
The semiconductor device of claim 5 wherein said amorphous material is selected from the group consisting of silicon, germanium, silicon carbide, silicon nitride and alloys thereof.
Claim 8
Dependent Claim
21 words
The semiconductor device of claim 4 wherein said photodiode includes Cu 2 S and CdS and said photoconductive region includes CdS.
Claim 9
Dependent Claim
13 words
The semiconductor device of claim 4 wherein said photodiode is a Schottky barrier
Claim 10
Dependent Claim
13 words
The semiconductor device of claim 4 wherein said photodiode is a p-n junction.
Claim 11
Dependent Claim
32 words
The semiconductor device of claim 1 wherein said photodiode includes a crystalline silicon p-n junction photodiode and said photoconductive region includes a material selected from the group consisting of cadmium-chalcogenides and lead-chalcogenides.
Claim 12
Dependent Claim
32 words
The semiconductor device of claim 1 wherein said photodiode includes a material selected from the group consisting of the pnictides of aluminum, gallium and indium in single crystalline form, or alloys thereof.
References Cited (Backward Citations)
US4297720A
Cited
US4387265A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-04-19 | 1991-10-19 | 1992-04-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-04-19 | 1995-10-19 | 1996-04-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-04-19 | 1999-10-19 | 2000-04-19 | $7700.00 | Window Closed / Lapsed |