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Patent US4737733A successfully refreshed from Google Patents.
US4737733A
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Overdrive control of FET power amplifier
Assignee: General Electric Co
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Filing: 1986-10-29
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Granted: 1988-04-12
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Expires: 2006-10-29
Abstract
Abstract An overdrive control for a GaAs FET power amplifier is provided by a PIN diode attenuator positioned at the input of the FET amplifier where the amount of attenuation is controlled by a control signal derived from the gate current of the following FET amplifier.
Inventors
- 👤 James N. LaPrade
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:31
CPC Classifications
H; H03; H03G; H03G3/00; H03G3/20; H03G3/30; H03G3/3036; H03G3/3042; H03F; H03F1/00; H03F1/52; H03F1/523
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
136 words
In combination: a FET power amplifier including a gate electrode; an overdrive control further comprising (a) a controllable attenuator adapted to be coupled to a source of RF signal to be amplified and coupled to said gate electrode of said power amplifier, said controllable attenuator further including a control input terminal and being responsive to a control signal applied to said control input terminal of said controllable attenuator for controlling the amplitude level of said RF signal applied through said controllable attenuator to said power amplifier; and (b) control signal generating means coupled to said gate electrode of said power amplifier and to said control input terminal of said controllable attenuator for generating said control signal and for coupling said control signal to said controllable attenuator in response to the current sensed at said gate electrode.
Claim 2
Dependent Claim
136 words
In combination: a FET power amplifier including a gate electrode; an overdrive control further comprising (a) a controllable attenuator adapted to be coupled to a source of RF signal to be amplified and coupled to said gate electrode of said power amplifier, said controllable attenuator further including a control input terminal and being responsive to a control signal applied to said control input terminal of said controllable attenuator for controlling the amplitude level of said RF signal applied through said controllable attenuator to said power amplifier; and (b) control signal generating means coupled to said gate electrode of said power amplifier and to said control input terminal of said controllable attenuator for generating said control signal and for coupling said control signal to said controllable attenuator in response to the current sensed at said gate electrode.
Claim 3
Dependent Claim
15 words
The combination of claim 1 wherein said FET power amplifier is a GaAs FET amplifier.
Claim 4
Dependent Claim
14 words
The combination of claim 1 wherein said controllable attenuator is a PIN diode attenuator.
Claim 5
Dependent Claim
23 words
The combination of claim 1 wherein said power amplifier includes a plurality of GaAs FET devices on a common monolithic microwave integrated circuit.
Claim 6
Dependent Claim
14 words
The combination of claim 4 wherein said attenuator resides within said common integrated circuit.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-04-12 | 1991-10-12 | 1992-04-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-04-12 | 1995-10-12 | 1996-04-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-04-12 | 1999-10-12 | 2000-04-12 | $7700.00 | Window Closed / Lapsed |