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Patent US4737474A successfully refreshed from Google Patents.
US4737474A
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US
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Silicide to silicon bonding process
Assignee: OC Oerlikon Balzers AG
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Filing: 1986-11-17
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Granted: 1988-04-12
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Expires: 2006-11-17
Abstract
Abstract A process for forming a bonding layer comprising amorphous silicon, titanium, chromium, or tungsten, between the silicide and the N+ polysilicon layer is disclosed. The bonding layer is preferably less than 50 nm. thick. After the bonding layer is deposited, a silicide layer is deposited and the wafer is then sintered at 900°-1000° C. for ten minutes or less.
Inventors
- 👤 J. B. Price
- 👤 Yu C. Chow
- 👤 John Mendonca
- 👤 Schyi-Yi Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:43
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; Y; Y10; Y10S; Y10S148/00; Y10S148/147
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
57 words
A process for forming an adherent layer of silicide on a polycrystalline silicon layer comprising the steps of: depositing an amorphous silicon layer on native oxide on said polycrystalline silicon layer; and then depositing said silicide layer on said amorphous silicon layer; and sintering said three layers to bond said silicide layer to said polycrystalline silicon layer.
Claim 2
Dependent Claim
57 words
A process for forming an adherent layer of silicide on a polycrystalline silicon layer comprising the steps of: depositing an amorphous silicon layer on native oxide on said polycrystalline silicon layer; and then depositing said silicide layer on said amorphous silicon layer; and sintering said three layers to bond said silicide layer to said polycrystalline silicon layer.
Claim 3
Dependent Claim
28 words
The process as set forth in claim 1 wherein said sintering step comprises: heating said layers to a temperature above 800° C. for less than approximately ten minutes.
Claim 4
Dependent Claim
24 words
The process as set forth in claim 2 wherein said amorphous silicon layer is deposited to a thickness of from 25 to 50 nm.
Claim 5
Dependent Claim
23 words
The process as set forth in claim 3 wherein said silicide layer is deposited to a thickness of from 200 to 300 nm.
Claim 6
Dependent Claim
15 words
The process as set forth in claim 4 wherein said amorphous silicon layer is undoped.
Claim 7
Dependent Claim
27 words
The process as set forth in claim 4 wherein said silicide is selected from the group consisting essentially of the silicides of tungsten, tantalum, titanium, and molybdenum.
Claim 8
Dependent Claim
17 words
The process as set forth in claim 1 wherein said amorphous silicon layer is deposited from dichlorosilane.
Claim 9
Dependent Claim
23 words
The process as set forth in claim 7 wherein said silicide layer is deposited from a mixture of tungsten hexafluoride and said dichlorosilane.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-04-12 | 1991-10-12 | 1992-04-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-04-12 | 1995-10-12 | 1996-04-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-04-12 | 1999-10-12 | 2000-04-12 | $7700.00 | Window Closed / Lapsed |