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US4737196A
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Amorphous solar cell
Assignee: New Energy and Industrial Technology Development Organization
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Filing: 1986-04-16
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Granted: 1988-04-12
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Expires: 2006-04-16
Abstract
Abstract An amorphous solar cell having a p-i-n (or n-i-p) structure, in which either or both of the p and n layers are of a double layer structure, including an amorphous semiconductor layer and a micro-crystalline semiconductor layer, wherein both layers are of the same conductivity type and the amorphous semiconductor layer is located at the side of the i layer.
Inventors
- 👤 Yoshinori Yukimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:50
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/172; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02E10/548
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
96 words
An amorphous solar cell having a p-i-n or n-i-p structure in which either or both the p and n layers are of a double layer structure, each double layer structure comprising an amorphous semiconductor layer and a micro-crystalline semiconductor layer, wherein both layers of each double layer structure are of the same conductivity type, wherein said amorphous semiconductor layer of each said double layer structure is located at the side of the i layer and wherein said amorphous semiconductor layer in said double layer structure has a thickness in the range of 10 to 50 Å.
Claim 2
Dependent Claim
96 words
An amorphous solar cell having a p-i-n or n-i-p structure in which either or both the p and n layers are of a double layer structure, each double layer structure comprising an amorphous semiconductor layer and a micro-crystalline semiconductor layer, wherein both layers of each double layer structure are of the same conductivity type, wherein said amorphous semiconductor layer of each said double layer structure is located at the side of the i layer and wherein said amorphous semiconductor layer in said double layer structure has a thickness in the range of 10 to 50 Å.
Claim 3
Dependent Claim
41 words
The amorphous solar cell of claim 1 wherein when said p type layer is of a double layer structure, said micro-crystalline semiconductor layer of the p type double layer structure has a thickness in the range of 20 to 100 Å.
Claim 4
Dependent Claim
40 words
The amorphous solar cell of claim 1 wherein when said n type layer is of a double layer structure, said micro-crystalline semiconductor layer of the n type layer structure has a thickness in the range of 100 to 500 Å.
Claim 5
Dependent Claim
45 words
The amorphous solar cell of claim 1, which includes a plurality of tandemly arranged p-i-n structures, wherein the i layer of the p-i-n structure has an band gap energy which is smaller as the distance from the light incident surface of the solar cell increases.
Claim 6
Dependent Claim
32 words
The amorphous solar cell of claim 1, which includes a plurality of tandemly arranged p-i-n or n-i-p structures wherein all of the p and n layers are of a double layer structure.
Claim 7
Dependent Claim
83 words
An amorphous solar cell having a p-i-n or n-i-p structure, in which both the p and n layers are of a double layer structure comprising an amorphous semiconductor layer and a micro-crystalline semiconductor layer, wherein both layers of each double layer structure are of the same conductivity type and the amorphous semiconductor layer is located at the side of the i layer, wherein said amorphous semiconductor layer in each said double structure has a thickness in the range of 10 to 50 Å.
Claim 8
Dependent Claim
83 words
An amorphous solar cell having a p-i-n or n-i-p structure, in which both the p and n layers are of a double layer structure comprising an amorphous semiconductor layer and a micro-crystalline semiconductor layer, wherein both layers of each double layer structure are of the same conductivity type and the amorphous semiconductor layer is located at the side of the i layer, wherein said amorphous semiconductor layer in each said double structure has a thickness in the range of 10 to 50 Å.
Claim 9
Dependent Claim
30 words
The amorphous solar cell of claim 6 wherein said micro-crystalline semiconductor layer of the p type double layer structure has a thickness in the range of 20 to 100 Å.
Claim 10
Dependent Claim
29 words
The amorphous solar cell of claim 6 wherein said micro-crystalline semiconductor layer of the n type layer structure has a thickness in the range of 100 to 500 Å.
References Cited (Backward Citations)
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EP0042467A2
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GB2083701A
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JPS5771188A
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JPS5963774A
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US4536607A
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