US4736012A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Hitachi Ltd
•
Filing: 1984-06-29
•
Granted: 1988-04-05
•
Expires: 2004-06-29
Abstract
Abstract A semiconductor device containing an alpha -rays shielding resin layer on at least active portion of a semiconductor element, said alpha -rays shielding resin being a special polyimide resin, is excellent in thermal resistance at the time of sealing the semiconductor element, adhesion of the alpha -rays shielding layer to the semiconductor element, and alpha -rays shielding ability.
Inventors
- 👤 Fusaji Shoji
- 👤 Akihiro Kenmotsu
- 👤 Isao Obara
- 👤 Hitoshi Yokono
- 👤 Takeshi Komaru
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 09:08
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/10; H10W76/17; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10W42/00; H10W42/20; H10W42/25; H10W74/40; H10W74/47; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W72/00; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/751; H10W90/754; H10W90/756
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
113 words
In a semiconductor device comprising a semiconductor element at least an active portion of which is coated with an α-rays shielding resin layer, and a package encapsulating said semiconductor element, the improvement wherein the resin for the α-ray shielding resin layer is a polyimide resin formed by dropping or spin coating a varnish of a precursor of the polyimide resin containing an aprotic polar solvent on the active portion and heating the varnish, the resin being at least one member selected from the group consisting of a polyimide resin having the repeating unit of the formula: ##STR35## and a polyimide resin having the repeating unit of the formulae: ##STR36## wherein R is ##STR37##
Claim 2
Dependent Claim
113 words
In a semiconductor device comprising a semiconductor element at least an active portion of which is coated with an α-rays shielding resin layer, and a package encapsulating said semiconductor element, the improvement wherein the resin for the α-ray shielding resin layer is a polyimide resin formed by dropping or spin coating a varnish of a precursor of the polyimide resin containing an aprotic polar solvent on the active portion and heating the varnish, the resin being at least one member selected from the group consisting of a polyimide resin having the repeating unit of the formula: ##STR35## and a polyimide resin having the repeating unit of the formulae: ##STR36## wherein R is ##STR37##
Claim 3
Dependent Claim
14 words
A semiconductor device according to claim 1, wherein the package is a ceramic package.
Claim 4
Dependent Claim
21 words
A semiconductor device according to claim 2, wherein the thickness of the α-rays shielding resin layer is 28 to 70 μm.
Claim 5
Dependent Claim
52 words
A semiconductor device according to claim 2, wherein the polyimide resin having the repeating unit of the formula (1) is obtained from 4,4'-diaminodiphenyl ether and 3,3',4,4'-biphenyltetracarboxylic acid dianhydride, or 4,4'-diaminodiphenyl ether and p-phenylenediamine (the former 100 to 25% by mole and the latter 0 to 75% by mole) and 3,3',4,4'-biphenyltetracarboxylic acid dianhydride.
Claim 6
Dependent Claim
61 words
A semiconductor device according to claim 2, wherein the polyimide resin having the repeating unit of the formulae (1) and (2) is obtained from (a) 4,4'-diaminodiphenyl ether, 3,3',4,4'-biphenyltetracarboxylic acid dianhydride and pyromellitic acid dianhydride, or (b) 4,4'-diaminodiphenyl ether, p-phenylenediamine (the former 100 to 25% by mole and the latter 0 to 75% by mole), 3,3',4,4'-biphenyltetracarboxylic acid dianhydride and pyromellitic acid dianhydride.
Claim 7
Dependent Claim
14 words
A semiconductor device according to claim 1, wherein the package is a resin package.
Claim 8
Dependent Claim
21 words
A semiconductor device according to claim 6, wherein the thickness of the α-rays shielding resin layer is 28 to 70 μm.
Claim 9
Dependent Claim
52 words
A semiconductor device according to claim 6, wherein the polyimide resin having the repeating unit of the formula (1) is obtained from 4,4'-diaminodiphenyl ether and 3,3',4,4'-biphenyltetracarboxylic acid dianhydride, or 4,4'-diaminodiphenyl ether and p-phenylenediamine (the former 100 to 25% by mole and the latter 0 to 75% by mole) and 3,3',4,4'-biphenyltetracarboxylic acid dianhydride.
Claim 10
Dependent Claim
61 words
A semiconductor device according to claim 6, wherein the polyimide resin having the repeating unit of the formulae (1) and (2) is obtained from (a) 4,4'-diaminodiphenyl ether, 3,3',4,4'-biphenyltetracarboxylic acid dianhydride and pyromellitic acid dianhydride, or (b) 4,4'-diaminodiphenyl ether, p-phenylenediamine (the former 100 to 25% by mole and the latter 0 to 75% by mole), 3,3',4,4'-biphenyltetracarboxylic acid dianhydride and pyromellitic acid dianhydride.
Claim 11
Dependent Claim
20 words
A semiconductor device according to claim 1, wherein said α-rays shielding resin layer is directly coated on said active portion.
Claim 12
Dependent Claim
21 words
A semiconductor device according to claim 1, wherein the thickness of the α-rays shielding resin layer is 28 to 70 μm.
Claim 13
Dependent Claim
32 words
A semiconductor device according to claim 1, wherein the varnish comprises 10 to 30% by weight of the polyimide resin precursor and 90 to 70% by weight of the aprotic polar solvent.
References Cited (Backward Citations)
US3632433A
Cited
US4017886A
Cited
US3953877A
Cited
US4040083A
Cited
US4091407A
Cited
GB2039145A
Cited
US4323405A
Cited
EP0019391A1
Cited
GB2067013A
Cited
US4494217A
Cited
US4473523A
Cited
US4378400A
Cited
GB2097999A
Cited
GB2098800A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-04-05 | 1991-10-05 | 1992-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-04-05 | 1995-10-05 | 1996-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-04-05 | 1999-10-05 | 2000-04-05 | $7700.00 | Window Closed / Lapsed |