US3632433A
Expired / Lapsed
US
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Method for producing a semiconductor device
Assignee: Hitachi Ltd
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Filing: 1968-03-26
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Granted: 1972-01-04
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Expires: 1988-03-26
Abstract
Abstract A first insulating film of silicon dioxide is provided on the surface of a semiconductor device, and a second silicon dioxide layer containing uniformly a small amount of phosphorus is deposited from the vapor phase on said first insulating film, thereby realizing stable passivation of the electrical characteristics of said semiconductor device. The waterproof property and accurate etching of said films are also accomplished.
Inventors
- 👤 Takashi Tokuyama
- 👤 Takaaki Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 07:09
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10D; H10D99/00; H10P; H10P95/00; H10W72/00; H10W72/90; H10W72/01; H10W72/015; H10W72/01515; H10W72/071; H10W72/075; H10W72/50; H10W72/531; H10W72/536; H10W72/59; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
25 words
The method of producing a semiconductor device according to claim 1, wherein the carrier gas is selected from the group consisting of nitrogen and argon.
Claim 2
Dependent Claim
73 words
The method of producing a semiconductor device according to claim 1, wherein the amount of phosphorus in said another silicon dioxide layer is adjusted by controlling the volume of phosphine in said gas mixture so that said another silicon dioxide layer has an etching rate less than 10 A./min. in an etching solution consisting essentially of 15 parts of hydrofluoric acid, 10 parts of nitric acid and 300 parts of water, by volume.
Claim 3
Dependent Claim
32 words
The method of producing a semiconductor device according to claim 1, wherein the thickness of the fresh silicon dioxide layer on the surface of the semiconductor element is more than 500 A.
Claim 4
Dependent Claim
26 words
The method of producing a semiconductor device according to claim 4 wherein the thickness of the fresh silicon dioxide layer is 2,500 A. to 3,000 A.
Claim 5
Dependent Claim
25 words
The method of producing a semiconductor device according to claim 1, wherein the thickness of said another silicon dioxide layer is 2,000 to 10,000 A.
Claim 6
Dependent Claim
43 words
The method of producing a semiconductor device according to claim 1, comprising the step of heating the semiconductor element, after the deposition of said another silicon dioxide layer, to a temperature higher than that at which said another silicon dioxide layer was formed.
Claim 7
Dependent Claim
39 words
The method of producing a semiconductor device according to claim 7, wherein the temperature and the period of the heat treatment are such that the phosphorus in said another silicon dioxide layer does not diffuse into the semiconductor element.
Claim 8
Dependent Claim
23 words
A method of producing a semiconductor device according to claim 1, wherein the volume ratio of silane to phosphine is at least 50.
Claim 9
Dependent Claim
44 words
A method of producing a semiconductor device according to claim 9, comprising the step of heating the semiconductor substrate after the step of forming said another silicon dioxide layer to a temperature higher than that at which said another silicon dioxide layer was formed.
Claim 10
Independent Claim
108 words
The method of producing a semiconductor device comprising the steps of (a) forming a silicon dioxide layer on one surface of a semiconductor substrate having at least one PN-junction therein, extending to the surface thereof, (b) forming holes exposing the selected portions of said substrate in said layer for producing electrical connections, (c) depositing electrode metal through the holes upon the surface of the substrate, (d) forming another silicon dioxide layer including phosphorus on the silicon dioxide layer and on the electrode metal by exposing the substrate to a gas mixture of silane, oxygen, phosphine and a carrier gas at temperatures of from about 250* to 550* C.
Claim 11
Dependent Claim
27 words
The method of producing a semiconductor device according to claim 11, characterized in that the carrier gas is selected from the group consisting of nitrogen and argon.
Claim 12
Dependent Claim
44 words
A method of producing a semiconductor device according to claim 11, comprising the step of heating the semiconductor substrate, after the step of forming said another silicon dioxide layer, to a temperature higher than that at which said another silicone dioxide layer was formed.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-01-03 | 1975-07-05 | 1976-01-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-01-03 | 1979-07-05 | 1980-01-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-01-03 | 1983-07-05 | 1984-01-04 | $7700.00 | Window Closed / Lapsed |