Semiconductor IC and method of making the same

Claim 1

A method for making a semiconductor device comprising the steps of: coating a photoresist layer on a semiconductor wafer; producing at least two coherent beams as an exposure beam, applying said two coherent beams onto said photoresist layer to generate an interference fringe so that a first pattern of said interference fringe having space period of 2T with respect to a minimum line width T is formed, said first pattern being formed by a holographic exposure method; further applying one of said two coherent beams and another exposure beam onto said photoresist layer for imaging at least one other pattern having a space period of an integer times that of said first pattern whereby said first pattern is deleted in part by said other pattern; developing said exposed photoresist to obtain a patterned photoresist layer; and processing said semiconductor wafer by using said patterned photoresist layer, to obtain a pattern of said semiconductor wafer which is used as said gate of semiconductor device.

Claim 2

A method for making a semiconductor device comprising the steps of: coating a photoresist layer on a semiconductor wafer; producing at least two coherent beams as an exposure beam, applying said two coherent beams onto said photoresist layer to generate an interference fringe so that a first pattern of said interference fringe having space period of 2T with respect to a minimum line width T is formed, said first pattern being formed by a holographic exposure method; further applying one of said two coherent beams and another exposure beam onto said photoresist layer for imaging at least one other pattern having a space period of an integer times that of said first pattern whereby said first pattern is deleted in part by said other pattern; developing said exposed photoresist to obtain a patterned photoresist layer; and processing said semiconductor wafer by using said patterned photoresist layer, to obtain a pattern of said semiconductor wafer which is used as said gate of semiconductor device.

Claim 3

A method for making a semiconductor device comprising the steps of: coating photoresist layer on a semiconductor wafer; producing at least two coherent beams as an exposure beam; applying said two coherent beams onto said photoresist layer to generate an interference fringe so that a first pattern of said interference fringe, having a space period of 2T with respect to a minimum line width T is formed, said first pattern being formed by a holographic exposuring method, thereby to obtain a first exposed photoresist layer; developing said first exposed photoresist layer to obtain a first patterned photoresist layer; further applying one of said coherent beams and another exposure beam onto said first patterned photoresist layer for imaging at least one other pattern having a space period of integer times that of said first pattern, thereby to obtain a second exposed photoresist layer; developing said second exposed photoresist layer, thereby to obtain a second patterned photoresist layer; and processing said semiconductor wafer by using said second patterned photoresist layer, thereby to obtain a pattern of said semiconductor wafer which is used as said gate of semiconductor device.

Claim 4

A method for making a semiconductor device comprising the steps of: coating photoresist layer on a semiconductor wafer; producing at least two coherent beams as an exposure beam; applying said two coherent beams onto said photoresist layer to generate an interference fringe so that a first pattern of said interference fringe, having a space period of 2T with respect to a minimum line width T is formed, said first pattern being formed by a holographic exposuring method, thereby to obtain a first exposed photoresist layer; developing said first exposed photoresist layer to obtain a first patterned photoresist layer; further applying one of said coherent beams and another exposure beam onto said first patterned photoresist layer for imaging at least one other pattern having a space period of integer times that of said first pattern, thereby to obtain a second exposed photoresist layer; developing said second exposed photoresist layer, thereby to obtain a second patterned photoresist layer; and processing said semiconductor wafer by using said second patterned photoresist layer, thereby to obtain a pattern of said semiconductor wafer which is used as said gate of semiconductor device.

Claim 5

A method for making a semiconductor device comprising the steps of: coating photoresist layer onto a semiconductor wafer; producing at least two coherent beams as an exposure beam; applying said two coherent beams onto said photoresist layer for generating an interference fringe so that a first repetition pattern repeating with a space period of 2T with respect to a minimum line width T is formed, said first pattern being formed by a holographic exposure method; and further applying one of said two coherent beams and another exposure beam on said photoresist layer for imaging at least one other repetition pattern repeating with space period of an integer times said 2T on said first repetition pattern; developing said exposure photoresist layer to obtain a patterned photoresist layer; and a step of processing said semiconduotor wafer by using said patterned photoresist layer, thereby to obtain a pattern of said semiconductor wafer.

Claim 6

A method for making a semiconductor device comprising the steps of: coating photoresist layer onto a semiconductor wafer; producing at least two coherent beams as an exposure beam; applying said two coherent beams onto said photoresist layer for generating an interference fringe so that a first repetition pattern repeating with a space period of 2T with respect to a minimum line width T is formed, said first pattern being formed by a holographic exposure method; and further applying one of said two coherent beams and another exposure beam on said photoresist layer for imaging at least one other repetition pattern repeating with space period of an integer times said 2T on said first repetition pattern; developing said exposure photoresist layer to obtain a patterned photoresist layer; and a step of processing said semiconduotor wafer by using said patterned photoresist layer, thereby to obtain a pattern of said semiconductor wafer.

Claim 7

A method for making a semiconductor device comprising the steps of: coating a photoresist layer on a semiconductor wafer; producing at least two coherent beams as an exposure beam; applying said two coherent beams onto said photoresist layer to generate an interference fringe so that a first repetition pattern of said interference fringe repeats with a space period of 2T with respect to a minimum line width T to thereby obtain a first exposed photoresist layer; developing said first exposed photoresist layer to obtain a first patterned photoresist layer; further applying one of said two coherent beams and another exposure beam on said first patterned photoresist layer for imaging at least one other repetition pattern repeating with space period of integer times said 2T on said first repetition pattern, thereby to obtain a second exposed photoresist layer; developing said second exposed photoresist layer, to obtain a second patterned photoresist layer; and processing said semiconductor wafer by using said second patterned photoresist layer, thereby to obtain a pattern of said semiconductor wafer.

Claim 8

A method for making a semiconductor device comprising the steps of: coating a photoresist layer on a semiconductor wafer; producing at least two coherent beams as an exposure beam; applying said two coherent beams onto said photoresist layer to generate an interference fringe so that a first repetition pattern of said interference fringe repeats with a space period of 2T with respect to a minimum line width T to thereby obtain a first exposed photoresist layer; developing said first exposed photoresist layer to obtain a first patterned photoresist layer; further applying one of said two coherent beams and another exposure beam on said first patterned photoresist layer for imaging at least one other repetition pattern repeating with space period of integer times said 2T on said first repetition pattern, thereby to obtain a second exposed photoresist layer; developing said second exposed photoresist layer, to obtain a second patterned photoresist layer; and processing said semiconductor wafer by using said second patterned photoresist layer, thereby to obtain a pattern of said semiconductor wafer.

Claim 9

A method for making a semiconductor device comprising the steps of; coating a photoresist layer onto a semiconductor wafer; producing at least two beams of coherent light as exposure beams; first applying said two coherent beams of wavelength λ onto said photoresist layer on said semiconductor wafer in order to generate an interference fring by an interference between said two beams to form a first pattern of said inteference fringe as defined by the following interval function equation: ##EQU3## where k is a positive integer and T is a controlled minimum line width, where 2T equals a pitch of said interference fringe which equals λ/2 sin θ, where 2θ is an angle formed between said two beams; second applying one of said two coherent beams and another exposure beam on said photoresist layer said second applying step using beams having a wavelength λ 2 to form a second pattern defined by the following second interval function equation ##EQU4## where j, k and mi are positive integers and wherein 2m i t equals a pitch of said interference fringe which equals λ/2 sin θ 2 , wherein 2θ 2 is an angle formed between said beams used in said second applying step, whereby said first pattern is deleted in part by said second pattern, developing said exposed photoresist layer to obtain a patterned photoresist layer; and processing said semiconductor wafer by using said pattern photoresist layer, thereby to obtain a pattern of said semiconductor wafer which is defined by the following equation: H.sub.(x) =F.sub.(k,x) ×G.sub.1(k,m,x) ×G.sub.2(k,m,x) ×. . . .

Claim 10

A method for making a semiconductor device comprising the steps of; coating a photoresist layer onto a semiconductor wafer; producing at least two beams of coherent light as exposure beams; first applying said two coherent beams of wavelength λ onto said photoresist layer on said semiconductor wafer in order to generate an interference fring by an interference between said two beams to form a first pattern of said inteference fringe as defined by the following interval function equation: ##EQU3## where k is a positive integer and T is a controlled minimum line width, where 2T equals a pitch of said interference fringe which equals λ/2 sin θ, where 2θ is an angle formed between said two beams; second applying one of said two coherent beams and another exposure beam on said photoresist layer said second applying step using beams having a wavelength λ 2 to form a second pattern defined by the following second interval function equation ##EQU4## where j, k and mi are positive integers and wherein 2m i t equals a pitch of said interference fringe which equals λ/2 sin θ 2 , wherein 2θ 2 is an angle formed between said beams used in said second applying step, whereby said first pattern is deleted in part by said second pattern, developing said exposed photoresist layer to obtain a patterned photoresist layer; and processing said semiconductor wafer by using said pattern photoresist layer, thereby to obtain a pattern of said semiconductor wafer which is defined by the following equation: H.sub.(x) =F.sub.(k,x) ×G.sub.1(k,m,x) ×G.sub.2(k,m,x) ×. . . .

Claim 14

A method for making a semiconductor device comprising the steps of: coating a photoresist layer onto a semiconductor wafer; producing at least two coherent beams as an exposure beam; applying said two coherent beams of wavelength λ on said photoresist layer so that they meet at angle 2θ for generating a first interference fringe, a first pattern repeating with a period of 2T with respect to a minimum line width T being formed, said interference fringe beign defined by the following first interval function equation: ##EQU5## where k is a positive integer and T is a controlled minimum line width, where 2T=λ/2 sin θ, thereby to obtain a first exposed photoresist layer; developing said first pattern as a first exposed photoresist layer to obtain a first patterned photoresist layer; a step of further applying one of said two coherent beams and of another exposure beam on said first patterned photoresist layer for imaging a second pattern defined by the following second interval function equation; ##EQU6## where j, k and m i are positive integers, thereby to obtain a second exposed photoresist layer; developing said second exposed photoresist layer, thereby to obtain a second patterned photoresist layer; and processing said semiconductor wafer by using said second patterned photoresist layer, thereby to obtain a pattern of said semiconductor wafer which is defined by the following equations: H.sub.(x) =F.sub.(k,x) ×G.sub.1(k,m,x) ×G.sub.2(k,m,x) ×. . . .

Claim 15

A method for making a semiconductor device comprising the steps of: coating a photoresist layer onto a semiconductor wafer; producing at least two coherent beams as an exposure beam; applying said two coherent beams of wavelength λ on said photoresist layer so that they meet at angle 2θ for generating a first interference fringe, a first pattern repeating with a period of 2T with respect to a minimum line width T being formed, said interference fringe beign defined by the following first interval function equation: ##EQU5## where k is a positive integer and T is a controlled minimum line width, where 2T=λ/2 sin θ, thereby to obtain a first exposed photoresist layer; developing said first pattern as a first exposed photoresist layer to obtain a first patterned photoresist layer; a step of further applying one of said two coherent beams and of another exposure beam on said first patterned photoresist layer for imaging a second pattern defined by the following second interval function equation; ##EQU6## where j, k and m i are positive integers, thereby to obtain a second exposed photoresist layer; developing said second exposed photoresist layer, thereby to obtain a second patterned photoresist layer; and processing said semiconductor wafer by using said second patterned photoresist layer, thereby to obtain a pattern of said semiconductor wafer which is defined by the following equations: H.sub.(x) =F.sub.(k,x) ×G.sub.1(k,m,x) ×G.sub.2(k,m,x) ×. . . .