Abstract A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g. VLSIs, with high fidelity is proposed. The composition comprises a cresol novolac resin and a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is characteristically a combination of two different cresol novolac resins differentiated in respects of the weight-average molecular weight, one large and the other small, and the weight proportion of the m- and p-isomers of cresol, one rich in the m-isomer and the other rich in the p-isomer, used in the preparation of the novolac and the overall weight ratio of the m-cresol and p-cresol moieties in the thus combined cresol novolac resins also should be in a specified range.
A positive-working photoresist composition which comprises an admixture of: (A) 100 parts by weight of a cresol novolac resin as a film-forming constituent; and (B) from 25 to 60 parts by weight of a naphthoquinone diazide sulfonic acid ester as a photosensitive constituent, the cresol novolac resin being a combination composed of: (A-1) a first cresol novolac resin having a weight-average molecular weight of at least 5000 and produced from an isomeric mixture consisting essentially of 60 to 80% of m-cresol and 40 to 20% of p-cresol; and (A-2) a second cresol novolac resin having a weight-average molecular weight not exceeding 5000 and produced from an isometric mixture consisting essentially of 10 to 40% of m-cresol and 90 to 60% of p-cresol in such a proportion that the overall cresol moiety in the component (A) is comprised of from 30 to 46.5% of the m-cresol moiety and from 70 to 53.5% of the p-cresol moiety.
Claim 2
Dependent Claim
155 words
A positive-working photoresist composition which comprises an admixture of: (A) 100 parts by weight of a cresol novolac resin as a film-forming constituent; and (B) from 25 to 60 parts by weight of a naphthoquinone diazide sulfonic acid ester as a photosensitive constituent, the cresol novolac resin being a combination composed of: (A-1) a first cresol novolac resin having a weight-average molecular weight of at least 5000 and produced from an isomeric mixture consisting essentially of 60 to 80% of m-cresol and 40 to 20% of p-cresol; and (A-2) a second cresol novolac resin having a weight-average molecular weight not exceeding 5000 and produced from an isometric mixture consisting essentially of 10 to 40% of m-cresol and 90 to 60% of p-cresol in such a proportion that the overall cresol moiety in the component (A) is comprised of from 30 to 46.5% of the m-cresol moiety and from 70 to 53.5% of the p-cresol moiety.
Claim 3
Dependent Claim
31 words
The positive-working photoresist composition as claimed in claim 1 wherein the naphthoquinone diazide sulfonic acid ester is an esterification product of naphthoquinone-1,2-diazido-5-sulfonic acid and a polyhydroxy benzophenone or an alkyl gallate.