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US4730207A
Expired / Lapsed
US
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Non-single-crystal semiconductor light emitting device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1986-03-24
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Granted: 1988-03-08
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Expires: 2006-03-24
Abstract
Abstract A non-single crystal semiconductor light emitting device comprising a non-single crystal semiconductor region formed by a non-single crystal semiconductor laminate member made up of a plurality m (where m≧3) of non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m sequentially laminate in this order. The thickness of each M 1 , M 2 . . . M m is 100 Å or less.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:51
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10H20/81; H10H20/817; H10H20/818; H10H20/822; H10H20/826; H10H20/833
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
113 words
A non-single-crystal semiconductor light emitting device comprising: a non-single-crystal semiconductor region formed by a non-single-crystal semiconductor laminate member made of a plurality m (where m=>3) of non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m sequentially laminated in this order, wherein the energy gaps Eg 1 , Eg 2 . . . and Eg m of said non-single-crystal semiconductor layers bear such relationships as Eg 1 >Eg 2 <Eg 3 , Eg 3 >Eg 4 <Eg 5 , . . . Eg.sub.(m-2) >Eg.sub.(m-1) <Eg m , and wherein the energy gaps Eg 2 , Eg 4 , . . . and Eg.sub.(m-1) are different from one another.
Claim 2
Dependent Claim
113 words
A non-single-crystal semiconductor light emitting device comprising: a non-single-crystal semiconductor region formed by a non-single-crystal semiconductor laminate member made of a plurality m (where m=>3) of non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m sequentially laminated in this order, wherein the energy gaps Eg 1 , Eg 2 . . . and Eg m of said non-single-crystal semiconductor layers bear such relationships as Eg 1 >Eg 2 <Eg 3 , Eg 3 >Eg 4 <Eg 5 , . . . Eg.sub.(m-2) >Eg.sub.(m-1) <Eg m , and wherein the energy gaps Eg 2 , Eg 4 , . . . and Eg.sub.(m-1) are different from one another.
Claim 3
Dependent Claim
64 words
A non-single-crystal semiconductor light emitting device according to claim 1 wherein the non-single-crystal semiconductor layers M 2 , M 4 , . . . and M.sub.(m-1) are formed of silicon carbides Si x2 C 1-x2 , Si x4 C 1-x4 , . . . and Si x (m-1) C 1-x (m-1), and wherein x2, x4, . . . x(m-1) are different from one another.
References Cited (Backward Citations)
US4559552A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-03-08 | 1991-09-07 | 1992-03-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-03-08 | 1995-09-07 | 1996-03-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-03-08 | 1999-09-07 | 2000-03-08 | $7700.00 | Window Closed / Lapsed |