US4725558A
Expired / Lapsed
US
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Semiconductor defects curing method and apparatus
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1986-11-06
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Granted: 1988-02-16
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Expires: 2006-11-06
Abstract
Abstract An improved semiconductor defects curing method and apparatus are disclosed which is free from current leakage due to pin-holes or other defects. Also an improved method for processing a semiconductor device is shown. According to the invention, the gaps or holes in the semiconductor layer produced in the fabrication process are filled with insulator in advance of deposition of electrodes.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Kunio Suzuki
- 👤 Mikio Kinka
- 👤 Takeshi Fukada
- 👤 Masayoshi Abe
- 👤 Ippei Kobayashi
- 👤 Katsuhiko Shibata
- 👤 Masato Susukida
- 👤 Susumu Nagayama
- 👤 Kaoru Koyanagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 06:02
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/95; H10F77/953; H10F77/955; H10F71/00; H10F71/135; H10F19/00; H10F19/30; H10F19/31; H10F71/10; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S136/00; Y10S136/29
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
110 words
A semiconductor defect curing method for semiconductor devices having a plurality of semiconductor elements, within each of which is formed a semiconductor junction, said method comprising: connecting a plurality of zener diodes in series with each other; connecting the anode of one of each said zener diode to one side of the junction of a corresponding semiconductor element; applying a reverse bias voltage to the plurality of zener diodes and to said plurality of semiconductor elements, the zener voltages and the reverse bias voltage being chosen so that the zener diode corresponding to each semiconductor element has its zener voltage less than the breakdown voltage of the corresponding semiconductor element.
Claim 2
Dependent Claim
110 words
A semiconductor defect curing method for semiconductor devices having a plurality of semiconductor elements, within each of which is formed a semiconductor junction, said method comprising: connecting a plurality of zener diodes in series with each other; connecting the anode of one of each said zener diode to one side of the junction of a corresponding semiconductor element; applying a reverse bias voltage to the plurality of zener diodes and to said plurality of semiconductor elements, the zener voltages and the reverse bias voltage being chosen so that the zener diode corresponding to each semiconductor element has its zener voltage less than the breakdown voltage of the corresponding semiconductor element.
Claim 3
Dependent Claim
15 words
The method of claim 1 wherein said semiconductor device is an array of solar cells.
Claim 4
Dependent Claim
21 words
The method of claim 2 wherein said semiconductor elements each comprise a semiconductor layer and a transparent oxide electrode formed thereon.
Claim 5
Dependent Claim
107 words
A semiconductor defect curing apparatus for semiconductor devices having a plurality of semiconductor elements, within each of which is formed a semiconductor junction, said apparatus comprising: a plurality of zener diodes connected in series with each other; a plurality of contacts adapted to make contact between the anode of one said zener diode to a corresponding semiconductor element; a voltage supply for applying a reverse bias voltage to the plurality of zener diodes, the zener voltages and the reverse bias voltage being chosen so that the zener diode corresponding to each semiconductor element has its zener voltage less than the breakdown voltage of the corresponding semiconductor element.
Claim 6
Dependent Claim
107 words
A semiconductor defect curing apparatus for semiconductor devices having a plurality of semiconductor elements, within each of which is formed a semiconductor junction, said apparatus comprising: a plurality of zener diodes connected in series with each other; a plurality of contacts adapted to make contact between the anode of one said zener diode to a corresponding semiconductor element; a voltage supply for applying a reverse bias voltage to the plurality of zener diodes, the zener voltages and the reverse bias voltage being chosen so that the zener diode corresponding to each semiconductor element has its zener voltage less than the breakdown voltage of the corresponding semiconductor element.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-02-15 | 1991-08-17 | 1992-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-02-15 | 1995-08-17 | 1996-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-02-15 | 1999-08-17 | 2000-02-16 | $7700.00 | Window Closed / Lapsed |