Manufacture of photo semiconductor device

Abstract

Abstract PURPOSE:To avoid short-circuit trouble of conductors pinching a photo semiconductor layer when the thin film type photo semiconductor layer is to be adheringly formed by a method wherein the circumference of a pinhole generated when penetrating the layer is molten by energy radiation to bury the pinhole. CONSTITUTION:The transparent electrode layer 2 is formed on one main surface of a transparent substrate 1. After the layer 2 is patterned, a P type layer 3P, an I type layer 3I, and an N type layer 3N are laminated in order on the layer 2 to form the photo semiconductor layer 3. The fact that the pinhole 5 is formed or not in the layer 3 formed by this way is detected by a photo sensor 7 and the laser beam. When the pinhole 5 is detected, output of the laser beam 6 is increased, and the layer 3 at the circumference of the pinhole 5 is molten to bury the pinhole 5. Then the back electrode 4 is formed on the layer 3 buried the pinhole 5. Accordingly, the electrode material is prevented from invasion in the pinhole 5, and short-circuit trouble between the electrodes 2, 4 pinching the layer 3 can be avoided.

Inventors

• 👤 Toshiaki Yokoo
• 👤 横尾　敏昭
• 👤 Yasuji Honjo
• 👤 本所　又嗣
• 👤 Masahito Horiuchi
• 👤 堀内　正仁
• 👤 Takashi Shibuya
• 👤 澁谷　尚
• 👤 Masaru Takeuchi
• 👤 勝 武内
• 👤 Seiichi Kiyama
• 👤 木山　精一

Bibliographic Details