Method of forming a capacitor-transistor integrated circuit

Claim 1

In an integrated circuit, the method of forming a capacitor structure at the same time as structure for transistors, each having a source, drain and gate, said method comprising the steps of: providing a substrate; forming a well of a first conductivity type in the substrate; forming a high concentration impurity region of a second conductivity type in the well to form a first capacitor plate at the same time that impurity regions for the source and drain of the transistors are formed; forming an oxide layer having access holes over the first-mentioned impurity region to form the capacitor dielectric at the same time that an oxide layer for the gates of the transistors is formed; forming a layer of high conductivity material over the first-mentioned oxide layer to form a second capacitor plate; and forming a layer of metalization over the first-mentioned oxide layer which is connected to the high concentration impurity region via the access holes to provide electrical connection to the first capacitor plate.