Integrated thermal ink jet printhead and method of manufacture

Claim 2

A process for fabricating a printhead structure for a thermal ink jet printhead which includes the steps of: a. providing an insulating substrate layer, b. depositing a layer of resistive material on the surface of said substrate layer and consisting of either polycrystalline silicon or a chosen refractory silicide selected from the group of tantalum silicide, titanium silicide, tungsten silicide and molybdenum silicide, c. forming a chosen refractory metal conductive pattern atop said resistive material and having an opening therein defining one dimension of a thermal ink jet resistor and for receiving current pulses when heating said resistive material during an ink jet printing operation, d. depositing a layer of silicon dioxide atop said conductive trace material, and thereafter e. reflowing said silicon dioxide layer in order to reshape the contours thereof and enable the surface contour of said silicon dioxide layer to more closely replicate the conductive trace material over which it is deposited.

Claim 3

The process defined in claim 1 which further includes the steps of depositing a refactory metal layer on the surface of said silicon dioxide layer and to a predetermined thickness.

Claim 4

The process defined in claim 1 wherein thin protective insulating layers of silicon nitride are formed on both sides of said conductive trace material in order to provide additional shielding of said resistive layer from oxidation, cavitation-produced wear and ink penetration during an ink jet printing operation.

Claim 5

A process for fabricating an integrated thermal ink jet and driver circuit including the steps of: a. providing a chosen resistive material on a printhead substrate, b. forming a layer of refractory metal on the surface of said resistive material and having an opening therein defining one dimension of a thermal ink jet resistor, c. providing a passivation layer or layers on the surface of said refractory metal and having an opening therein exposing a surface area of said refractory metal, d. reflowing said passivation layer or layers at a chosen elevated temperature to provide smooth contours therein which are compatible with multi-level metal integrated circuit connections, and e. depositing interconnect metallization in said opening to make electrical contact with said refractory metal, whereby MOS driver circuitry and the like may be fabricated on a common substrate with said thermal ink jet heater resistors in a monolithic multi-level metal integrated circuit arrangement especially well suited for multi-level metal interconnections.

Claim 6

A process for fabricating an integrated thermal ink jet and driver circuit including the steps of: a. providing a chosen resistive material on a printhead substrate, b. forming a layer of refractory metal on the surface of said resistive material and having an opening therein defining one dimension of a thermal ink jet resistor, c. providing a passivation layer or layers on the surface of said refractory metal and having an opening therein exposing a surface area of said refractory metal, d. reflowing said passivation layer or layers at a chosen elevated temperature to provide smooth contours therein which are compatible with multi-level metal integrated circuit connections, and e. depositing interconnect metallization in said opening to make electrical contact with said refractory metal, whereby MOS driver circuitry and the like may be fabricated on a common substrate with said thermal ink jet heater resistors in a monolithic multi-level metal integrated circuit arrangement especially well suited for multi-level metal interconnections.

Claim 7

The process defined in claim 4 wherein said refractory metal is selected from the group consisting of tungsten and tantalum and titanium and molybdenum.

Claim 8

The process defined in claim 5 wherein said resistive material is selected from the group consisting of a refractory silicide and polycrystalline silicon.

Claim 9

The process defined in claim 4 which further includes heating said surface passivation layer or layers at a chosen elevated temperature to provide smooth contours therein which are compatible with multi-level metal integrated circuit connections.

Claim 10

The process defined in claim 7 which further includes depositing a barrier layer metal on the surface of said passivation layer or layers.

Claim 11

An integrated circuit wherein driver circuitry and printhead resistor interconnect circuitry are fabricated on a common substrate, including: a. a substrate having a layer of resistive material thereon, said resistive material being selected from the group consisting of polycrystalline silicon and a refractory metal silicide, b. a layer of refractory metal disposed on said resistive material and having an opening therein defining one dimension of a thermal ink jet resistor, said refractory metal being selected from the group consisting of tungsten and titanium and tantalum and molybdenum, c. a passivation layer or layers disposed on the surface of said refractory metal and having an opening therein exposing a surface area of said refractory metal, d. driver interconnect metallization disposed in said opening in said passivation layer and in electrical contact with said refractory metal, whereby said interconnect metallization and said refractory metal may be formed in immediately adjacent layers in an MOS multi-level metal integrated circuit, and e. a metal barrier layer disposed on the surface of said passivation layer or layers and above an ink jet resistor to provide enhanced insulation from ink which is disposed above said thermal ink jet resistor, said metal barrier layer is tantalum, said interconnect metallization is aluminum, and one of said passivation layers is phosphorous doped glass.

Claim 12

An integrated circuit wherein driver circuitry and printhead resistor interconnect circuitry are fabricated on a common substrate, including: a. a substrate having a layer of resistive material thereon, said resistive material being selected from the group consisting of polycrystalline silicon and a refractory metal silicide, b. a layer of refractory metal disposed on said resistive material and having an opening therein defining one dimension of a thermal ink jet resistor, said refractory metal being selected from the group consisting of tungsten and titanium and tantalum and molybdenum, c. a passivation layer or layers disposed on the surface of said refractory metal and having an opening therein exposing a surface area of said refractory metal, d. driver interconnect metallization disposed in said opening in said passivation layer and in electrical contact with said refractory metal, whereby said interconnect metallization and said refractory metal may be formed in immediately adjacent layers in an MOS multi-level metal integrated circuit, and e. a metal barrier layer disposed on the surface of said passivation layer or layers and above an ink jet resistor to provide enhanced insulation from ink which is disposed above said thermal ink jet resistor, said metal barrier layer is tantalum, said interconnect metallization is aluminum, and one of said passivation layers is phosphorous doped glass.