Method of making shallow junction complementary vertical bipolar transistor pair

Claim 2

Process for forming an integrated circuit structure including a complementary pair of vertical bipolar transistor comprising; providing a semiconductor substrate having first and second active regions formed of an epitaxial layer thereon; simultaneously forming, by a first conductivity type ion implantation, precursors of a first transistor base and a second transistor collector reach-through in said first and second regions, respectively; forming the collector of said second transistor by deep second conductivity type ion implantation into said second active region; forming a base precursor of said second transistor in correspondence with a portion of said second transistor collector by selective first conductivity type ion implantation of said second active region; forming, by selective first conductivity type doping, emitter of said first transistor in a surface portion of said first transistor base precursor; annealing to simultaneously form first and second transistor bases and second transistor collector reach-through from their respective precursors; and forming, by selective second conductivity type doping, emitter of said second transistor in a surface portion of said second transistor base.

Claim 3

The process as recited in claim 1 wherein said first conductivity type is N type and said first transistor is NPN transistor and said second conductivity type is P type and said second transistor is PNP transistor.

Claim 4

The process as recited in claim 2 further comprising forming a subcollector for said NPN transistor on a surface portion of said substrate by N type blanket doping prior to forming of said epitaxial layer.

Claim 5

The process as recited in claim 3 further comprising forming a reach-through for said NPN subcollector by selective doping of a vertical portion said first active region.

Claim 6

The process as recited in claim 4 wherein said deep P type implant is accomplished to form the bottom of said PNP collector at the interface of said NPN subcollector and said epitaxial layer.

Claim 7

The process as recited in claim 5 wherein the P dopant concentration in said PNP collector is maximum at said interface.

Claim 8

The process as recited in claim 5 wherein said P type ion implantation is accomplished by using doubly ionized boron atoms at a high energy.

Claim 9

The process as recited in claim 6 wherein said annealing is accomplished to permit interception of said PNP base with said PNP collector.

Claim 10

Method for forming complementary vertical NPN and PNP transistor structure comprising: (a) providing a semiconductor substrate having first and second active regions formed of an N type epitaxial layer thereon; (b) simultaneously forming NPN base precursor and PNP collector reach-through precursor in said first and second active regions, respectively; (c) forming PNP collector by implanting P type species to lodge said species in said second region at the bottom of said epitaxial layer; (d) forming PNP base precursor in said second active region; (e) annealing to simultaneously form PNP and NPN bases and PNP reach-through from their respective precursors; (f) simultaneously forming, by selective N type doping, NPN emitter and a low resistance contact region for said PNP base; (g) forming deep dielectric-filled trenches in said substrate to isolate the first active region from said second active region; and (h) simultaneously forming, by selective P type doping, PNP emitter and low resistance contacts for said PNP collector reach-through and NPN base.

Claim 11

Method for forming complementary vertical NPN and PNP transistor structure comprising: (a) providing a semiconductor substrate having first and second active regions formed of an N type epitaxial layer thereon; (b) simultaneously forming NPN base precursor and PNP collector reach-through precursor in said first and second active regions, respectively; (c) forming PNP collector by implanting P type species to lodge said species in said second region at the bottom of said epitaxial layer; (d) forming PNP base precursor in said second active region; (e) annealing to simultaneously form PNP and NPN bases and PNP reach-through from their respective precursors; (f) simultaneously forming, by selective N type doping, NPN emitter and a low resistance contact region for said PNP base; (g) forming deep dielectric-filled trenches in said substrate to isolate the first active region from said second active region; and (h) simultaneously forming, by selective P type doping, PNP emitter and low resistance contacts for said PNP collector reach-through and NPN base.

Claim 12

The method as recited in claim 9 further comprising forming a subcollector for said NPN transistor on a surface portion of said substrate by blanket N type doping prior to forming said epitaxial layer.

Claim 13

The method as recited in claim 10 further comprising forming a reach-through for said NPN subcollector by selective N doping of a portion of said active region.

Claim 14

The method as recited in claim 11 wherein said step for forming NPN emitter includes forming a low resistance contact region for said NPN subcollector reach-through.

Claim 15

The method as recited in claim 12 further comprising: forming after said step (e) an insulator layer on the resulting structure; making in said insulator layer openings in correspondence with said NPN emitter and contact regions for said PNP base and NPN subcollector reach-through.

Claim 16

The method as recited in claim 13 further comprising: forming after said step (f), openings in said insulator layer in correspondence with said PNP emitter and contact regions for said PNP collector reach-through and NPN base.

Claim 17

The method as recited in claim 14 further comprising thermally oxidizing to grow oxide in the regions of said substrate exposed by said openings in said insulator layer wherein the thickness of said oxide grown in the openings in correspondence with the NPN emitter and contact regions for the NPN subcollector reach-through and PNP base is substantially thicker than the oxide grown in said openings in correspondence with the PNP emitter and contact regions for PNP collector reach-through and NPN base.

Claim 18

The method as recited in claim 15 further comprising etching to remove the oxide grown in the openings of said insulator in correspondence with the PNP emitter and contact regions for PNP collector reach-through and NPN base prior to said step (h) while maintaining a substantial thickness oxide in the openings in said insulator in correspondence with NPN emitter and contacts for NPN collector reach-through and PNP base.

Claim 19

The method as recited in claim 16 further comprising: removing said substantial thickness oxide following said step (h); and establishing self-aligned conductive contacts with said PNP and NPN emitters and bases and said PNP collector reach-through and NPN subcollector reach-through.

Claim 20

The method as recited in claim 16 wherein said oxide grown in the openings in said insulator in correspondence with said NPN emitter and contacts for NPN collector reach-through and PNP base is about 3-4 times thicker than that grown in the openings in said insulator in correspondence with said PNP emitter and contact regions for PNP collector reach-through and NPN base.

Claim 21

Method for forming complementary vertical PNP and NPN transistor pair comprising: providing a silicon substrate having first and second active regions formed of an N type monocrystalline epitaxial silicon layer thereon and an N+ subcollector in said first active region directly beneath said epitaxial layer; forming a reach-through for said N+ subcollector by introducing N type dopant into a selected vertical portion of said epitaxial layer in said first active region; introducing P type dopant into a surface portion of said epitaxial layer in said first and second active regions forming precursors of NPN base and PNP collector reach-through, respectively; selectively implanting N type ions into the surface portion of said epitaxial layer in said second active region to form precursor of PNP base; using a mask having an opening in correspondence with said second active region ion implanting high energy P type species to lodge said species in said second active region at the bottom of the epitaxial layer therein; annealing to form the (1) NPN base from the NPN base precursor; (2) PNP base from the PNP base precursor; and (3) PNP collector reach-through from the PNP collector reach-through precursor; forming an insulator mask having an openings in correspondence with portions of said NPN base, PNP base and said NPN subcollector reach-through; introducing N type dopant through said openings in said insulator mask forming a high N+ dopant surface concentration NPN emitter and contact regions for the PNP base and NPN subcollector reach-through; forming openings in said insulator layer to expose portions of said PNP base and PNP collector reach-through and a second portion of said NPN base; growing by thermal oxidation a thick oxide on said NPN emitter and contact regions for PNP base and NPN subcollector reach-through and a thin oxide on said portions of PNP base and collector reach-through and said second portion of said NPN base; forming deep dielectric-filled trenches to electrically isolate said first and second active regions; etching away said thin oxide to expose said portions of PNP base and collector reach-through and said second portion of NPN base, while substantially maintaining said thick oxide; and introducing P type dopant to form a high P dopant concentration PNP emitter in said exposed portion of PNP base and low resistance contact regions in said portion of PNP collector reach-through and said second portion of NPN base.

Claim 22

Method for forming complementary vertical PNP and NPN transistor pair comprising: providing a silicon substrate having first and second active regions formed of an N type monocrystalline epitaxial silicon layer thereon and an N+ subcollector in said first active region directly beneath said epitaxial layer; forming a reach-through for said N+ subcollector by introducing N type dopant into a selected vertical portion of said epitaxial layer in said first active region; introducing P type dopant into a surface portion of said epitaxial layer in said first and second active regions forming precursors of NPN base and PNP collector reach-through, respectively; selectively implanting N type ions into the surface portion of said epitaxial layer in said second active region to form precursor of PNP base; using a mask having an opening in correspondence with said second active region ion implanting high energy P type species to lodge said species in said second active region at the bottom of the epitaxial layer therein; annealing to form the (1) NPN base from the NPN base precursor; (2) PNP base from the PNP base precursor; and (3) PNP collector reach-through from the PNP collector reach-through precursor; forming an insulator mask having an openings in correspondence with portions of said NPN base, PNP base and said NPN subcollector reach-through; introducing N type dopant through said openings in said insulator mask forming a high N+ dopant surface concentration NPN emitter and contact regions for the PNP base and NPN subcollector reach-through; forming openings in said insulator layer to expose portions of said PNP base and PNP collector reach-through and a second portion of said NPN base; growing by thermal oxidation a thick oxide on said NPN emitter and contact regions for PNP base and NPN subcollector reach-through and a thin oxide on said portions of PNP base and collector reach-through and said second portion of said NPN base; forming deep dielectric-filled trenches to electrically isolate said first and second active regions; etching away said thin oxide to expose said portions of PNP base and collector reach-through and said second portion of NPN base, while substantially maintaining said thick oxide; and introducing P type dopant to form a high P dopant concentration PNP emitter in said exposed portion of PNP base and low resistance contact regions in said portion of PNP collector reach-through and said second portion of NPN base.

Claim 23

The method as recited in claim 19 further comprising forming self-aligned contacts with said PNP and NPN emitters.

Claim 24

The method as in claim 19 where the dopant concentration of said PNP emitter is in the range of about (5-10)×10 19 atoms/cc.

Claim 25

The method as recited in claim 19 wherein the dopant concentration of said NPN emitter is in the range of about (2-4)×10 20 atoms/cc.

Claim 26

The method as recited in claim 19 wherein said PNP and NPN emitters have a similar junction depth in the range of about 0.3-0.4 μm.