Patent US4719124A successfully refreshed from Google Patents.
US4719124A
Expired / Lapsed
US
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Low temperature deposition utilizing organometallic compounds
Assignee: Nokia Bell Labs
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Filing: 1986-07-28
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Granted: 1988-01-12
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Expires: 2006-07-28
Abstract
Abstract It has been found that deposition temperature for materials such as cadmium mercury telluride is significantly lowered by precracking selected precursor materials. For example, if organometallic compounds such as diethylmercury and diethyltellurium are decomposed before introduction in the deposition vapor, epitaxial layer formation is possible at 250° C.
Inventors
- 👤 Po-Yen Lu
- 👤 Chi-Hua Wang
- 👤 Larry M. Williams
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 10:01
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/24; H10P14/2913; H10P14/2917; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3432
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
74 words
A process for forming a device comprising the steps of (1) subjecting a heated substrate to at least two precursor gases whereby the deposition of a II-VI semiconductor material on said substrate is induced, and (2) completing said device CHARACTERIZED IN THAT at least one of said precursor gases substantially decomposes only at temperatures above 300° C. and each of said precursor gases that substantially decomposes only at temperatures above 300° C. is precracked.
Claim 2
Dependent Claim
74 words
A process for forming a device comprising the steps of (1) subjecting a heated substrate to at least two precursor gases whereby the deposition of a II-VI semiconductor material on said substrate is induced, and (2) completing said device CHARACTERIZED IN THAT at least one of said precursor gases substantially decomposes only at temperatures above 300° C. and each of said precursor gases that substantially decomposes only at temperatures above 300° C. is precracked.
Claim 3
Dependent Claim
12 words
The process of claim 1 wherein said II-VI material comprises cadmium telluride.
Claim 4
Dependent Claim
13 words
The process of claim 1 wherein said II-VI material comprises cadmium mercury telluride.
Claim 5
Dependent Claim
16 words
The process of claim 1 wherein said substrate is heated to a temperature below 300° C.
Claim 6
Dependent Claim
16 words
The process of claim 4 wherein said substrate is heated to a temperature below 250° C.
Claim 7
Dependent Claim
24 words
The process of claim 4 wherein an entity from said precracked precursor is reacted with a second of said precursor gases at the substrate.
Claim 8
Dependent Claim
24 words
The process of claim 1 wherein an entity from said precracked precursor is reacted with a second of said precursor gases at said substrate.
Claim 9
Dependent Claim
13 words
The process of claim 7 wherein said precursor that is precracked comprises dimethylmercury.
Claim 10
Dependent Claim
11 words
The process of claim 8 wherein said second precursor comprises dimethylcadmium.
Claim 11
Dependent Claim
13 words
The process of claim 1 wherein said precursor that is precracked is dimethylmercury.
Claim 12
Dependent Claim
13 words
The process of claim 1 wherein said precursor that is precracked is diethyltelluride.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-01-11 | 1991-07-13 | 1992-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-01-11 | 1995-07-13 | 1996-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-01-11 | 1999-07-13 | 2000-01-12 | $7700.00 | Window Closed / Lapsed |