Method for metal-organic chemical vapor deposition vapor-phase epitaxial growth

Abstract

Abstract PURPOSE:To obtain a single crystal having good characteristics, by growing an epitaxial single crystal of zinc selenide from an alkylzinc and hydrogen selenide as raw materials on a substrate at a specific temperature by the metal-organic chemical vapor deposition. CONSTITUTION:An epitaxial single crystal of mixed crystal of zinc selenide or zinc selenide sulfide is grown on a substrate by the method for metal-organic chemical vapor deposition vapor-phase epitaxial growth method. An alkylzinc and hydrogen selenide or further with hydrogen sulfide are used as the raw material, and epitaxial growth is carried out at 180-320 deg.C growth temperature. Dimethyzinc, diethylzinc, etc. are used as the alkylzinc, diluted with a carrier gas and fed at about 10<-6>-10<-3>mol/min feed rate. The hydrogen selenide and hydrogen sulfide are also diluted with a carrier gas to about 5-10% concentration and fed at about 10<-6>-10<-2>mol/min feed rate.

Inventors

• 👤 Shigeo Fujita
• 👤 茂夫 藤田
• 👤 Yoshinobu Matsuda
• 👤 松田　芳信
• 👤 Akio Sasaki
• 👤 昭夫 佐々木

Bibliographic Details