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US4717688A
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Liquid phase epitaxy method
Assignee: Siemens AG
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Filing: 1987-01-28
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Granted: 1988-01-05
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Expires: 2007-01-28
Abstract
Abstract A liquid phase epitaxy method for the manufacture of silicon layers containing semiconductor structures involving the epitaxial deposition of silicon using a melt of a metal as the solvent, the metal forming silicon saturated solutions below 900° C., and not producing any doping in the layers corresponding to a concentration greater than 10 17 doping atoms/cm 3 . A gold melt is preferred because the melting point of the gold-silicon eutectic is about 370° C. The invention provides for implementing the liquid phase epitaxy at very low temperatures and, thus, producing single crystal silicon layers on substrates provided with insulation layers, and required for the manufacture of three-dimensional integrated circuits in microelectronics.
Inventors
- 👤 Ottomar Jaentsch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:34
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D88/00; H10D88/01; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
96 words
In a liquid phase epitaxy method for the manufacture of three-dimensional semiconductor structures on a silicon substrate in which a molten metal solvent is employed for the manufacture of uniformly doped silicon layers, the improvement which comprises: employing as the solvent a metal having the following characteristics: (1) a solution of said metal saturated with silicon is molten at temperatures below 900° C., (2) the metal does not produce doping in the silicon which corresponds to a concentration of more than 10 17 doping atoms/cm 3 , and (3) the metal is not a silicide-forming agent.
Claim 2
Dependent Claim
96 words
In a liquid phase epitaxy method for the manufacture of three-dimensional semiconductor structures on a silicon substrate in which a molten metal solvent is employed for the manufacture of uniformly doped silicon layers, the improvement which comprises: employing as the solvent a metal having the following characteristics: (1) a solution of said metal saturated with silicon is molten at temperatures below 900° C., (2) the metal does not produce doping in the silicon which corresponds to a concentration of more than 10 17 doping atoms/cm 3 , and (3) the metal is not a silicide-forming agent.
Claim 3
Dependent Claim
11 words
A method according to claim 1, wherein said metal is gold.
Claim 4
Dependent Claim
28 words
A method according to claim 2, wherein the proportion of silicon and solution in said gold is greater than 31 atomic percent but less than 49 atomic percent.
Claim 5
Dependent Claim
21 words
A method according to claim 3, wherein the proportion of silicon is in the range of 32 to 28 atomic percent.
Claim 6
Dependent Claim
27 words
A method according to claim 1, wherein the basic doping of said uniformly doped silicon layers it at a concentration below 10 14 doping atoms/cm 3 .
Claim 7
Dependent Claim
11 words
A method according to claim 1, wherein said metal is silver.
Claim 8
Dependent Claim
25 words
A method according to claim 6, wherein the proportion of silicon in the silicon-silver melt is in the range from 15.4 to 16.0 atomic percent.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-01-04 | 1991-07-06 | 1992-01-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-01-04 | 1995-07-06 | 1996-01-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-01-04 | 1999-07-06 | 2000-01-05 | $7700.00 | Window Closed / Lapsed |