Method for the simultaneous manufacture of bipolar and complementary MOS transistors on a common silicon substrate

Claim 1

A method for the simultaneous manufacture of bipolar and complementary MOS transistors on a common silicon substrate which comprises, in sequence: (a) providing a p-doped silicon substrate, (b) applying a surface-wide double insulation layer composed of silicon dioxide and silicon nitride over said substrate, (c) photolithographically structuring said silicon nitride layer, (d) forming a deeply extending collector region in said substrate by deep implantation of said substrate with n-doping ions through said silicon nitride, (e) removing the silicon nitride structures from said substrate, (f) implanting n-doping ions into said substrate to form n-wells in the regions from which said silicon nitride was removed, (g) diffusing in n-doping ions into said substrate while simultaneously oxidizing the surfaces of said n-wells to form oxide masks, (h) removing said silicon nitride layer and performing deep channel implantation of boron ions into said substrate through said oxide masks, (i) applying a double layer of silicon dioxide and silicon nitride over said substrate, (j) structuring said silicon nitride layer to open the active regions and selectively masking by photoresist selected regions of the opened area, (k) implanting boron ions through the masks provided in step (j) to dope the field oxide regions of the n-channel transistors to be formed, (l) removing the photoresist mask provided in step (j) and locally oxidizing said substrate to form field oxide regions for separating the active transistor regions of said substrate, utilizing the silicon nitride applied in step (i) as a mask, (l') applying a photoresist mask to define the base of the bipolar transistor, (m) implanting boron ions to form base zones in the bipolar transistor region, (n) removing the photoresist mask and oxidizing the substrate surface-wide to produce a gate oxide thereon, (o) implanting boron ions surface-wide to dope the channel regions of the n-channel and p-channel MOS transistors, (p) depositing a gate material surface-wide to provide the gate electrodes of said MOS transistors, (q) vapor depositing a surface-wide layer of silicon dioxide to form an intermediate oxide, (r) selectively implanting n-doping ions to form source/drain regions of the n-channel transistors and the n + emitter and the n + collector contact of the bipolar transistors having masked before all other regions by photoresist, (s) selectively implanting boron ions to form source/drain regions of the p-channel transistors and the p + base contact of the bipolar transistors having masked before all other regions by photoresist, and (t) removing the photoresist mask, etching the contact holes, and performing usual metallization technique.

Claim 2

A method for the simultaneous manufacture of bipolar and complementary MOS transistors on a common silicon substrate which comprises, in sequence: (a) providing a p-doped silicon substrate, (b) applying a surface-wide double insulation layer composed of silicon dioxide and silicon nitride over said substrate, (c) photolithographically structuring said silicon nitride layer, (d) forming a deeply extending collector region in said substrate by deep implantation of said substrate with n-doping ions through said silicon nitride, (e) removing the silicon nitride structures from said substrate, (f) implanting n-doping ions into said substrate to form n-wells in the regions from which said silicon nitride was removed, (g) diffusing in n-doping ions into said substrate while simultaneously oxidizing the surfaces of said n-wells to form oxide masks, (h) removing said silicon nitride layer and performing deep channel implantation of boron ions into said substrate through said oxide masks, (i) applying a double layer of silicon dioxide and silicon nitride over said substrate, (j) structuring said silicon nitride layer to open the active regions and selectively masking by photoresist selected regions of the opened area, (k) implanting boron ions through the masks provided in step (j) to dope the field oxide regions of the n-channel transistors to be formed, (l) removing the photoresist mask provided in step (j) and locally oxidizing said substrate to form field oxide regions for separating the active transistor regions of said substrate, utilizing the silicon nitride applied in step (i) as a mask, (l') applying a photoresist mask to define the base of the bipolar transistor, (m) implanting boron ions to form base zones in the bipolar transistor region, (n) removing the photoresist mask and oxidizing the substrate surface-wide to produce a gate oxide thereon, (o) implanting boron ions surface-wide to dope the channel regions of the n-channel and p-channel MOS transistors, (p) depositing a gate material surface-wide to provide the gate electrodes of said MOS transistors, (q) vapor depositing a surface-wide layer of silicon dioxide to form an intermediate oxide, (r) selectively implanting n-doping ions to form source/drain regions of the n-channel transistors and the n + emitter and the n + collector contact of the bipolar transistors having masked before all other regions by photoresist, (s) selectively implanting boron ions to form source/drain regions of the p-channel transistors and the p + base contact of the bipolar transistors having masked before all other regions by photoresist, and (t) removing the photoresist mask, etching the contact holes, and performing usual metallization technique.