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US4713356A
Expired / Lapsed
US
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Manufacturing MOS semiconductor device with planarized conductive layer
Assignee: Toshiba Corp
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Filing: 1986-02-27
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Granted: 1987-12-15
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Expires: 2006-02-27
Abstract
Abstract A method of manufacturing a semiconductor device wherein the proportion of the area occupied by the source and drain regions can be reduced. In this method, the side walls of a gate electrode are first selectively deposited with an insulating film, then conductive material layers are selectively formed on the source and drain regions, partially extending to side portions of an element isolation regions, and, after forming an insulating protective film over the entire surface of the resultant structure, contact holes are formed to reach the conductive material layers for forming source and drain wiring layers.
Inventors
- 👤 Yoichi Hiruta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:12
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D64/00; H10D64/01; H10D64/021; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/259; H10P; H10P14/00; H10P14/40; H10P14/418; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/0698
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
266 words
A method of manufacturing a semiconductor device, comprising the sequential steps of: (a) forming an element isolation region in a surface of a semiconductor substrate; (b) forming a gate oxide film on an element region of said semiconductor substrate, said element region being surrounded by said element isolation region; (c) selectively forming a gate electrode on said gate oxide film; (d) forming source and drain regions in said semiconductor substrate using said gate electrode as a mask; (e) selectively removing a portion of gate oxide film on said source and drain regions; (f) forming an insulating film on side walls of said gate electrode; (g) depositing a conductive material layer on the entire surface of the resultant structure; (h) etching back said conductive material layer to totally remove said conductive material layer deposited on said gate electrode and on a top surface of said insulating film formed in step (f) to expose an upper surface of said gate electrode and said top surface of said insulating film to leave a portion of said conductive material layer remaining on said source and drain regions, a top surface of said portion of said conductive material layer remaining on said source and drain regions being substantially flush with said upper surface of said gate electrode and with said top surface of said insulating film; (i) forming an insulating protective film over the entire surface of the resultant structure; (j) forming contact holes in said protective film; and (k) filling a conductive material in said contact holes and forming wiring layers which are connected to said source and drain regions.
Claim 2
Independent Claim
266 words
A method of manufacturing a semiconductor device, comprising the sequential steps of: (a) forming an element isolation region in a surface of a semiconductor substrate; (b) forming a gate oxide film on an element region of said semiconductor substrate, said element region being surrounded by said element isolation region; (c) selectively forming a gate electrode on said gate oxide film; (d) forming source and drain regions in said semiconductor substrate using said gate electrode as a mask; (e) selectively removing a portion of gate oxide film on said source and drain regions; (f) forming an insulating film on side walls of said gate electrode; (g) depositing a conductive material layer on the entire surface of the resultant structure; (h) etching back said conductive material layer to totally remove said conductive material layer deposited on said gate electrode and on a top surface of said insulating film formed in step (f) to expose an upper surface of said gate electrode and said top surface of said insulating film to leave a portion of said conductive material layer remaining on said source and drain regions, a top surface of said portion of said conductive material layer remaining on said source and drain regions being substantially flush with said upper surface of said gate electrode and with said top surface of said insulating film; (i) forming an insulating protective film over the entire surface of the resultant structure; (j) forming contact holes in said protective film; and (k) filling a conductive material in said contact holes and forming wiring layers which are connected to said source and drain regions.
Claim 3
Dependent Claim
84 words
A method according to claim 1, wherein in said step (h) said conductive material layer is left only on said source and drain regions, and another conductive material layer is deposited after said step (h) and before said step (i), with one side thereof in contact with said remaining conductive material layer and the other side of which extends along one side of said adjacent element isolation region, said contact holes formed in step (j) being in contact with said another conductive material layer.
Claim 4
Dependent Claim
29 words
A method according to claim 1, wherein said step (c) a level of said gate electrode is made to be substantially equal to that of said element isolation region.
Claim 5
Dependent Claim
19 words
A method according to claim 1, wherein said conductive material layer in said step (g) is a metal layer.
Claim 6
Dependent Claim
12 words
A method according to claim 4, wherein said metal layer comprises tungsten.
Claim 7
Dependent Claim
19 words
A method according to claim 1, wherein said conductive material layer in said step (g) is a polysilicon layer.
Claim 8
Dependent Claim
36 words
A method according to claim 1, wherein in said step (h) said conductive material layer is left not only on said source and drain regions but also on a surrounding portion of said element isolation region.
Claim 9
Dependent Claim
56 words
A method according to claim 7, wherein in said step (h) after depositing said conductive material layer, a resist layer having a viscosity of 40 to 100 cp (centipoise) is formed by spin-coating to have a curvature corresponding to projections and recesses in the upper surface of said conductive material layer, and is etched back thereafter.
Claim 10
Dependent Claim
37 words
A method according to claim 7, wherein said contact holes in said step (j) are vertically formed in a position in contact with the upper surface of said remaining conductive material layer on said element isolation region.
Claim 11
Dependent Claim
27 words
A method according to claim 1, wherein said conductive material in said step (k) consists of the same material as said conductive material in said step (g).
Claim 12
Dependent Claim
27 words
A method according to claim 1, wherein said conductive material in said step (k) consists of a different material from said conductive material in said step (g).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-12-14 | 1991-06-15 | 1991-12-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-12-14 | 1995-06-15 | 1995-12-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-12-14 | 1999-06-15 | 1999-12-15 | $7700.00 | Window Closed / Lapsed |