Patent US4712085A successfully refreshed from Google Patents.
US4712085A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thermistor element and method of manufacturing the same
Assignee: TDK Corp
•
Filing: 1985-10-29
•
Granted: 1987-12-08
•
Expires: 2005-10-29
Abstract
Abstract A thermistor element for temperature measurement has a thermistor chip in wafer form and thin film electrodes formed on respective principal surfaces of the thermistor chip. The thin film electrodes are formed by evaporation. Lead wires are adhered to the thin film electrodes with heat-resisting conductive material. The assembled members are sealed with glass. The electrodes may be made of two-layer films.
Inventors
- 👤 Nobuyuki Miki
- 👤 Hiroshi Yamaoka
- 👤 Yoichi Tanaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 08:47
CPC Classifications
G; G01; G01K; G01K7/00; G01K7/16; G01K7/22; G01K7/223; H; H01; H01C; H01C17/00; H01C17/28; H01C17/288; H01C7/00; H01C7/04; H01C7/042; H01C7/043; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49085
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
160 words
A thermistor element comprising: a sintered thermistor chip in wafer form with two principal opposite respective surfaces; thin film electrodes evaporated on said principal opposite respective surfaces of the thermistor chip; lead wires each having one end which is respectively adhered to each of the thin film electrodes with heat-resisting conductive material; and a glass body for sealing the thermistor chip, the thin film electrodes and the adhered ends of the lead wires; wherein each of the thin film electrodes comprises a lower layer film and an upper layer film, and the lower layer film is formed by evaporating at least one metal selected from a group consisting of W, Mo, Ti, Ta, Cu, Ag, Au, Pt and Pd, and the upper layer film is formed by at least one metal selected from a group consisting of Ag, Au, Pt and Pd, and the material for the upper layer film is different from the material for the upper layer film.
Claim 2
Dependent Claim
160 words
A thermistor element comprising: a sintered thermistor chip in wafer form with two principal opposite respective surfaces; thin film electrodes evaporated on said principal opposite respective surfaces of the thermistor chip; lead wires each having one end which is respectively adhered to each of the thin film electrodes with heat-resisting conductive material; and a glass body for sealing the thermistor chip, the thin film electrodes and the adhered ends of the lead wires; wherein each of the thin film electrodes comprises a lower layer film and an upper layer film, and the lower layer film is formed by evaporating at least one metal selected from a group consisting of W, Mo, Ti, Ta, Cu, Ag, Au, Pt and Pd, and the upper layer film is formed by at least one metal selected from a group consisting of Ag, Au, Pt and Pd, and the material for the upper layer film is different from the material for the upper layer film.
Claim 3
Independent Claim
109 words
A method of manufacturing a thermistor element comprising steps of: molding powdery materials of combined metal oxides and then sintering thus molded material; slicing the sintered material to obtain wafers and lapping the surfaces of the wafers; evaporating metal or alloy on one surface of the wafer and then another surface of the same to form the thin film electrodes; cutting the wafer evaporated with the thin film electrodes to obtain thermistor chips; adhering lead wires to the thin film electrodes on the wafer chip respectively by heat-resisting conductive material; and sealing the thermistor chip, the thin film electrodes and the adhered ends of the lead wires with glass.
Claim 4
Independent Claim
109 words
A method of manufacturing a thermistor element comprising steps of: molding powdery materials of combined metal oxides and then sintering thus molded material; slicing the sintered material to obtain wafers and lapping the surfaces of the wafers; evaporating metal or alloy on one surface of the wafer and then another surface of the same to form the thin film electrodes; cutting the wafer evaporated with the thin film electrodes to obtain thermistor chips; adhering lead wires to the thin film electrodes on the wafer chip respectively by heat-resisting conductive material; and sealing the thermistor chip, the thin film electrodes and the adhered ends of the lead wires with glass.
Claim 5
Dependent Claim
34 words
The method according to claim 2, wherein the thin film electrode is evaporated by using at least one selected from a group consisting of W, Mo, Ti, Ta, Cu, Ag, Au, Pt and Pd.
Claim 6
Dependent Claim
21 words
The method according to claim 2, wherein the thin film electrode comprises a lower layer film and an upper layer film.
Claim 7
Dependent Claim
74 words
The method according to claim 4, wherein the lower layer film is formed by evaporating at least one selected from a group consisting of W, Mo, Ti, Ta, Cu, Ag, Au, Pt and Pd, and the upper layer film is formed by evaporating at least one selected from a group consisting of Ag, Au, Pt and Pd, and the material for the lower layer film is different from that for the upper layer film.
References Cited (Backward Citations)
US3735321A
Cited
US3815074A
Cited
US3901067A
Cited
US4200970A
Cited
US4426542A
Cited
US4584552A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-12-07 | 1991-06-08 | 1991-12-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-12-07 | 1995-06-08 | 1995-12-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-12-07 | 1999-06-08 | 1999-12-08 | $7700.00 | Window Closed / Lapsed |