Patent US4710631A successfully refreshed from Google Patents.
US4710631A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Temperature compensation for a semiconductor light source used for exposure of light sensitive material
Assignee: Fujifilm Holdings Corp
•
Filing: 1985-08-27
•
Granted: 1987-12-01
•
Expires: 2005-08-27
Abstract
Abstract An image forming method for exposing a light-sensitive material with a semiconductor light source whereby temperature-dependent variations in the radiation intensity and spectral characteristics of the light source are fully compensated for so as to maintain constant exposure conditions. For this purpose, correction coefficients for ambient temperature dependent variations in the radiation intensity and spectral characteristics of the semiconductor light source are stored in a memory as tabulated data. In response to the measured ambient temperature, a correction coefficient is read from the memory and applied to compensate for any variations in the radiation intensity and spectral characteristics of the semiconductor light source. Also, the correction can be effected in accordance with the measured temperature of the light source, that measurement being performed by detecting a change in the forward bias supplied to the semiconductor light source.
Inventors
- 👤 Yasuo Aotsuka
- 👤 Masahiro Konishi
- 👤 Koji Takahashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:41
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/06; H01S5/068; G; G03; G03C; G03C5/00; G03C5/16; G03C5/164; H01S5/0607; H01S5/0612; H01S5/0617
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
72 words
In an image forming method wherein a light-sensitive material having spectral sensitivity characteristics with a peak value is exposed under a semiconductor light source, the improvement comprising: rendering a center wavelength of variations in peak spectral radiation due to variation of temperature from said light source substantially equal to a wavelength for peak spectral sensitivity of said light-sensitive material, and compensating any temperature-dependent variations in said radiation intensity of said light source.
Claim 2
Dependent Claim
72 words
In an image forming method wherein a light-sensitive material having spectral sensitivity characteristics with a peak value is exposed under a semiconductor light source, the improvement comprising: rendering a center wavelength of variations in peak spectral radiation due to variation of temperature from said light source substantially equal to a wavelength for peak spectral sensitivity of said light-sensitive material, and compensating any temperature-dependent variations in said radiation intensity of said light source.
Claim 3
Dependent Claim
32 words
The image forming method according to claim 1, wherein said radiation intensity of said light source is corrected in response to a signal of ambient temperature as measured by a temperature sensor.
Claim 4
Dependent Claim
67 words
An image forming method according to claim 1, wherein the step of compensating any temperature-dependent variations in said radiation intensity of said semiconductor light source comprises: detecting temperature variations of a temperature of said light source by measurement of change in a forward bias applied to said light source; and compensating for any variation in said temperature of said light source in response to thus-detected temperature variations.
References Cited (Backward Citations)
US2322027A
Cited
US2592250A
Cited
US2688545A
Cited
US2933390A
Cited
US3392020A
Cited
US2977299A
Cited
US2996382A
Cited
US3152904A
Cited
US3220846A
Cited
US3206313A
Cited
US3457075A
Cited
US3301678A
Cited
US3397060A
Cited
US3367778A
Cited
US3447927A
Cited
US3527641A
Cited
US3522052A
Cited
US3743510A
Cited
US3615641A
Cited
US3635721A
Cited
US3617295A
Cited
US3628964A
Cited
US3617293A
Cited
US3615613A
Cited
US3634089A
Cited
US3814609A
Cited
US3679428A
Cited
US3672898A
Cited
US3666480A
Cited
US3703377A
Cited
US3839041A
Cited
US3669670A
Cited
US3700458A
Cited
US3725070A
Cited
US3769301A
Cited
US3837862A
Cited
JPS4913224A
Cited
US3844788A
Cited
JPS5022625A
Cited
JPS5017216A
Cited
JPS5032928A
Cited
JPS5062635A
Cited
US3893859A
Cited
US3877940A
Cited
US3985565A
Cited
US4022617A
Cited
JPS5159943A
Cited
JPS5139853A
Cited
JPS5142529A
Cited
US4012260A
Cited
US4026707A
Cited
JPS52109925A
Cited
JPS52110618A
Cited
JPS5312375A
Cited
US4060420A
Cited
JPS5332737A
Cited
US4088496A
Cited
US4220709A
Cited
US4243952A
Cited
US4235957A
Cited
US4375067A
Cited
JPS57151933A
Cited
JPS58177534A
Cited
JPS5983154A
Cited
JPS59119960A
Cited
JPS59152440A
Cited
JPS59154445A
Cited
JPS59157637A
Cited
JPS59168440A
Cited
JPS59174834A
Cited
JPS59180537A
Cited
JPS59195237A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-30 | 1991-06-01 | 1991-12-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-30 | 1995-06-01 | 1995-12-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-30 | 1999-06-01 | 1999-12-01 | $7700.00 | Window Closed / Lapsed |